Abstract: A method for producing a laminate that includes at least the following: providing a first intermediate laminate comprising a carrier substrate including a support therein and a peelable metal layer formed on at least one surface of the carrier substrate; forming, in a section not serving as a product of the first intermediate laminate, a first hole reaching at least the support in the carrier substrate from a surface of the first intermediate laminate, to prepare a second intermediate laminate with the first hole; stacking and disposing on the surface where the first hole is formed of the second intermediate laminate, an insulating material and a metal foil in this order when viewed from the surface; and pressurizing the second intermediate laminate, the insulating material and the metal foil in the stacking direction thereof with heating, to prepare a third intermediate laminate where the first hole is filled with the insulating material; and performing treatment with a chemical agent on the third intermedia

Abstract: A laminate including at least providing a first intermediate laminate provided with a carrier substrate including a support and a peelable metal layer formed on at least one surface of the carrier substrate, forming, in a section not serving as a product of the first intermediate laminate, a first hole reaching at least the support from the surface of the first intermediate laminate, to prepare a second intermediate laminate with the first hole, stacking and disposing on the surface where the first hole is formed, an insulating material and a metal foil in this order when viewed from the surface, and pressurizing the second intermediate laminate, the insulating material and the metal foil in the stacking direction with heating, to prepare a third intermediate laminate where the first hole is filled with the insulating material, and performing treatment with a chemical agent on the third intermediate laminate.

Abstract: A method of manufacturing a Cu alloy conductor includes the steps of: adding and dissolving In of 0.1-0.7 weight % to a Cu matrix containing oxygen of 0.001-0.1 weight % (10-1000 weight ppm) to form a molten Cu alloy, performing a continuous casting with the molten Cu alloy, rapidly quenching a casting material to a temperature by at least 15° C. or more lower than a melting point of molten Cu alloy, controlling the casting material at a temperature equal to or lower than 900° C., and performing a plurality of hot rolling processes to the casting material such that a temperature of a final hot rolling is within a range of from 500 to 600° C. to form the rolled material.

Abstract: A flow control valve includes a housing that includes a fluid inlet and a fluid outlet; a valve body that together with the housing, forms a first chamber with a variable volume and a second chamber with a variable volume; a communication passage that connects the first chamber and the second chamber together; and an urging portion that urges the valve body in a direction in which the volume of the first chamber decreases. When the valve body moves in a direction to increase the volume of the first chamber against urging force of the urging portion, the valve body moves closer to the fluid outlet and reduces a degree to which the second chamber is communicated with the fluid outlet.

Abstract: A method of manufacturing a Cu alloy conductor comprises the steps of: adding and dissolving In of 0.1-0.7 weight % to a Cu matrix containing oxygen of 0.001-0.1 weight % (10-1000 weight ppm) to form a molten Cu alloy, performing a continuous casting with the molten Cu alloy, rapidly quenching a casting material to a temperature by at least 15° C. or more lower than a melting point of molten Cu alloy, controlling the casting material at a temperature equal to or lower than 900° C., and performing a plurality of hot rolling processes to the casting material such that a temperature of a final hot rolling is within a range of from 500 to 600° C. to form the rolled material.

Abstract: A straight angle conductor 10 is provided with a cladding material including a core-sheet metal 11 and conductor-sheet metals 12a, 12b that sandwich both surfaces of the core-sheet metal 11. The conductor-sheet metals 12a, 12b having a volume resistivity equal to or less than 5.0 (??·cm) wraps both sides of the core-sheet metal 11 having a thermal expansion coefficient equal to or less than 10 (×10?6/C. °) to prevent the core-sheet metal 11 from being exposed to an outside of the conductor-sheet metals 12a, 12b. As a result, it prevents occurrence of an electrical potential difference in a boundary side face between the core-sheet metal 11 and the conductor-sheet metals 12a, 12b to improve corrosion resistance. Especially even when the straight angle conductor 10 is used on a silicon crystal wafer for a solar cell, damage of the silicon crystal wafer caused by heat occurring in soldering process of the conductor 10 or a change in temperature on use thereof for a solar cell is avoided.

Abstract: A flat cable conductor has: a conductor made of copper or a copper alloy; a first plating film made of tin and/or a tin-copper alloy, the first plating film being formed around the conductor; and a second plating film made of an alloy of tin and a third element selected from Au, Ag, Ni, Ge, Zn and Bi, the second plating film being formed around the first plating film. The third element has a concentration of 0.01 or more and 80 or less wt % at an outer surface of the second plating film.

Abstract: In a lead-free solder comprising an alloy composition composed mainly of tin, the alloy composition further contains 0.002 to 0.015% by mass of phosphorus. This lead-free solder can be used as a plating in a connection lead comprising: a copper strip or other strip conductor; and the plating provided on at least one side of the strip constructor, the plating having a shape such that the plating in the widthwise direction of the strip conductor has a bulge as viewed in section with the apex being located at a proper position in the widthwise direction of the strip conductor. By virtue of this constitution, the lead-free solder on its surface is less likely to be oxidized, and the connection lead has excellent bond strength owing to the property of the lead-free solder and, in addition, has the function of breaking the formed oxide layer and the function of removing included gas bubbles and can eliminate the need to form the plating in very large thickness.

Abstract: A control valve is disclosed in which a direct-moved shaft having one end abutted against a diaphragm is direct moved according to deformation of the diaphragm so that a valve element mounted on the other end of the direct-moved shaft is adhered to and separated from an opening edge of a passage, thereby controlling a flow rate of a fluid passing through the passage. The control valve includes a first body enclosing the direct-moved shaft, a second body enclosing the diaphragm, a compressive elastic member deformed when the second body is pressed against the first body, and a holder for holding the second body on the first body while the compressive elastic member is deformed by compression.

Abstract: A flat cable conductor has: a conductor made of copper or a copper alloy; a first plating film made of tin and/or a tin-copper alloy, the first plating film being formed around the conductor; and a second plating film made of an alloy of tin and a third element selected from Au, Ag, Ni, Ge, Zn and Bi, the second plating film being formed around the first plating film. The third element has a concentration of 0.01 or more and 80 or less wt % at an outer surface of the second plating film.

Abstract: A method of manufacturing a Cu alloy conductor comprises the steps of: adding and dissolving In of 0.1-0.7 weight % to a Cu matrix containing oxygen of 0.001-0.1 weight % (10-1000 weight ppm) to form a molten Cu alloy, performing a continuous casting with the molten Cu alloy, rapidly quenching a casting material to a temperature by at least 15° C. or more lower than a melting point of molten Cu alloy, controlling the casting material at a temperature equal to or lower than 900° C., and performing a plurality of hot rolling processes to the casting material such that a temperature of a final hot rolling is within a range of from 500 to 600° C. to form the rolled material.

Abstract: A plurality of memory cells corresponding to an address space larger than 2n and smaller than 2(n+1), an invalid address detecting circuit, and an invalid signal outputting circuit are comprised. Upon command input, the invalid address detecting circuit invalidates a command in the case where the invalid address detecting circuit detects a fact that an address signal supplied from exterior indicates an invalid address space. Therefore, at the time of invalid address supply, internal circuits are not activated and an erroneous write or erase operation can be prevented. Since the internal circuits do not operate, power consumption can be reduced substantially. The invalid signal outputting circuit outputs an invalid signal by receiving the fact of invalid address signal detection by the invalid address detecting circuit. Therefore, a system unit mounting the semiconductor memory device can easily recognize that the invalid address signal has been supplied to the semiconductor memory device.

Abstract: A straight angle conductor 10 is provided with a cladding material including a core-sheet metal 11 and conductor-sheet metals 12a, 12b that sandwich both surfaces of the core-sheet metal 11. The conductor-sheet metals 12a, 12b having a volume resistivity equal to or less than 5.0 (??·cm) wraps both sides of the core-sheet metal 11 having a thermal expansion coefficient equal to or less than 10 (×106/C°) to prevent the core-sheet metal 11 from being exposed to an outside of the conductor-sheet metals 12a, 12b. As a result, it prevents occurrence of an electrical potential difference in a boundary side face between the core-sheet metal 11 and the conductor-sheet metals 12a, 12b to improve corrosion resistance. Especially even when the straight angle conductor 10 is used on a silicon crystal wafer for a solar cell, damage of the silicon crystal wafer caused by heat occurring in soldering process of the conductor 10 or a change in temperature on use thereof for a solar cell is avoided.

Abstract: A control valve is disclosed in which a direct-moved shaft having one end abutted against a diaphragm is direct moved according to deformation of the diaphragm so that a valve element mounted on the other end of the direct-moved shaft is adhered to and separated from an opening edge of a passage, thereby controlling a flow rate of a fluid passing through the passage. The control valve includes a first body enclosing the direct-moved shaft, a second body enclosing the diaphragm, a compressive elastic member deformed when the second body is pressed against the first body, and a holder for holding the second body on the first body while the compressive elastic member is deformed by compression.

Abstract: A wire rod comprising high-purity copper having a total unavoidable impurity content of not more than 1 ppm by mass and, added to the high-purity copper, 1.0 to 5.0% by mass of silver having a purity of not less than 99.99% by mass is drawn to an ultrafine copper alloy wire with a diameter of not more than 0.08 mm. According to this constitution, since the content of foreign matter, causative of breaking of wires, in a base material has been minimized, excellent wire drawability and bending properties can be realized. Further, since silver is used as an additive element, the ultrafine copper alloy wire possesses excellent tensile strength. This constitution can further realize a stranded copper alloy wire conductor, and an extrafine coaxial cable possessing excellent tensile strength, wire drawability, and bending properties.

Abstract: A process for forming an ultrafine copper alloy wire is provided. The alloy includes a copper matrix of high purity copper having a total unavoidable impurity content of not more than 10 mass ppm. The matrix contains 0.05 to 0.9 mass % of at least one metallic element of the group of tin, indium, silver, antimony, magnesium, aluminum, and boron. The alloy is melted in a carbon crucible. The molten alloy is cast into a wire rod utilizing a carbon mold. The wire rod is then subjected to a primary wire drawing, an annealing, and a secondary wire drawing. The produced ultrafine copper alloy wire has excellent tensile strength, electrical conductivity, and drawability.

Abstract: A highly accurate and relatively inexpensive control valve for a compressor. The control valve includes a pressure sensitive portion that has a metal diaphragm, which is machined with a relatively low cost. The diaphragm is held between flanges. The pressure sensitive portion is attached to a control valve portion after being subjected to a pressure leak test. The control valve portion has an engaging piece and a positioning surface. The flange contacts the positioning surface and is fixed by the engaging piece. The positioning surface is formed such that the interval between the diaphragm and the top of the valve chamber becomes a predetermined value.

Abstract: This invention provides a composite conductor having excellent strength, flexing resistance and corrosion resistance, a production method thereof and a cable employing the same composite conductor. A corrosion resistant layer is formed of Au, Ag, Sn, Ni, solder, Zn, Pd, Sn—Ni alloy, Ni—Co alloy, Ni—P alloy, Ni—Co—P alloy, Cu—Zn alloy, Sn—Bi alloy, Sn—Ag—cu alloy, Sn—Cu alloy or Sn—Zn alloy in the thickness of 0.5 &mgr;m or more on an external periphery of a core made of copper-metal fiber conductor. A wire material made of the copper-metal fiber conductor is subjected to area reduction processing. In the middle of the area reduction processing or after the area reduction processing is completed, corrosion resistant layer is formed on the periphery of the wire material in the thickness of 0.

Abstract: In an extrafine or ultrafine copper alloy wire having an outer diameter of not more than 0.1 mm, the copper alloy wire is formed of a heat treated copper alloy comprising 0.05 to 0.9% by weight in total of at least one metallic element selected from the group consisting of tin, indium, silver, antimony, magnesium, aluminum, and boron and not more than 50 ppm of oxygen with the balance consisting of copper. By virtue of this constitution, the extrafine or ultrafine copper alloy wire has a combination of excellent bending fatigue lifetime based on high tensile strength and excellent torsional strength based on high elongation or a combination of excellent tensile strength, electrical conductivity, and drawability and good elongation. The invention has been described in detail with particular reference to preferred embodiments, but it will be understood that variations and modifications can be effected within the scope of the invention as set forth in the appended claims.

Abstract: A nonvolatile semiconductor memory device includes a reference circuit which includes a plurality of reference cell transistors connected together and receiving a common gate voltage, and includes a signal line having an electric current running therethrough that is a composite of electric currents running through the reference cell transistors in accordance with the gate voltage. The semiconductor memory device further includes a memory cell array which include memory cells for storing data therein, a comparison circuit which compares the electric current running through the signal line with an electric current corresponding to data of one of the memory cells, and a threshold value setting circuit which adjusts threshold voltage levels of one or more of the reference cell transistors so as to bring a voltage versus current characteristic curve of the gate voltage and the electric current running through the signal line closer to a voltage versus current characteristic curve of the memory cells.