Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.

Abstract: A solid-state imaging device includes a semiconductor layer, a reflector, and a plurality of element separating regions. In the semiconductor layer, a plurality of photoelectric conversion elements is arranged in a two-dimensional array. The reflector covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which alight is incident, and reflects the light. The element separating regions are formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements. Each of the element separating regions extend from the surface of the semiconductor layer on which the light is incident to the reflector and has a reflection surface for reflecting light.

Abstract: According to an embodiment, provided is a solid-state imaging device. The solid-state imaging device is provided with a semiconductor layer, a gate of a pixel transistor, a gate of a peripheral circuit transistor, a silicon nitride film and a sidewall. A photo diode and a floating diffusion are provided in the semiconductor layer. The gate of the pixel transistor is provided on a surface of the semiconductor layer with the gate oxide film interposed therebetween. The gate of the peripheral circuit transistor is provided on the surface of the semiconductor layer with the gate oxide film interposed therebetween. The silicon nitride film is provided on an upper surface of the photo diode in the semiconductor layer with the gate oxide film interposed therebetween. The sidewall is provided on at least one side surface of the gate of the pixel transistor except for a side surface on the photo diode.

Abstract: According to one embodiment, an imaging device includes a semiconductor layer, an electrode, first and second insulating films, and a light blocking film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface, and includes pixels configured to detect light. The electrode is provided on the first surface and is configured to control an output of the pixels. The first insulating film is provided on the second surface. The second insulating film is provided on the first insulating film and has a smaller refractive index in a visible light range than the first insulating film. One end of the light blocking film is located in the second insulating film or at a same level as a surface of the second insulating film. Another end of the light blocking film is located in the semiconductor layer.

Abstract: According to one embodiment, a laser heating treatment method includes forming a film having a higher melting point than a structural body provided on a substrate so as to cover the structural body, and heating the structural body by irradiating the film and the structural body with laser.

Abstract: A solid-state imaging device includes a plurality of photoelectric transducers disposed in an array in a semiconductor layer. Each photoelectric transducer includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first and second regions are in direct contact. An isolation region is between each adjacent pair of photoelectric transducers. The isolation region includes an insulating material extending from a surface of the semiconductor layer and a third semiconductor region of the first conductivity type surrounding the insulating material. The third semiconductor region is between the insulating material and the first semiconductor region, and the first semiconductor region is between the second and third semiconductor regions.

Abstract: A solid-state imaging device includes a semiconductor layer, a reflector, and a plurality of element separating regions. In the semiconductor layer, a plurality of photoelectric conversion elements is arranged in a two-dimensional array. The reflector covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which alight is incident, and reflects the light. The element separating regions are formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements. Each of the element separating regions extend from the surface of the semiconductor layer on which the light is incident to the reflector and has a reflection surface for reflecting light.

Abstract: According to one embodiment, an imaging device includes a semiconductor layer, an electrode, first and second insulating films, and a light blocking film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface, and includes pixels configured to detect light. The electrode is provided on the first surface and is configured to control an output of the pixels. The first insulating film is provided on the second surface. The second insulating film is provided on the first insulating film and has a smaller refractive index in a visible light range than the first insulating film. One end of the light blocking film is located in the second insulating film or at a same level as a surface of the second insulating film. Another end of the light blocking film is located in the semiconductor layer.