Abstract: The present invention efficiently captures a target object contained in an exhaust gas. A trap apparatus includes a tubular housing including a flow path through which an exhaust gas exhausted through an exhaust pipe flows, a plate-shaped first trap member arranged inside the housing so as to shield a central portion of the flow path when viewed in a direction along a central axis of the housing, and a plate-shaped second trap member arranged inside the housing at an interval from the first trap member in the direction along the central axis of the housing, the second trap member including an opening at a position corresponding to the first trap member.

Abstract: There is provision of a showerhead assembly including a plate provided with multiple gas holes. Each of the gas holes has a first opening, a second opening, and a gas passage disposed between the first opening and the second opening. The gas passage has a first portion communicating with the first opening and a second portion communicating with the second opening. The second portion has a funnel-like shape or a bell-like shape, and an edge of the second opening is rounded.

Abstract: There is provision of a showerhead assembly including a plate provided with multiple gas holes. Each of the gas holes has a first opening, a second opening, and a gas passage disposed between the first opening and the second opening. The gas passage has a first portion communicating with the first opening and a second portion communicating with the second opening. The second portion has a funnel-like shape or a bell-like shape, and an edge of the second opening is rounded.

Abstract: A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.

Abstract: A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.

Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Abstract: A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.

Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Abstract: A focus ring for a plasma processing apparatus has an inner region (12a), middle region (12b), and outer region (12c), disposed in this order from the inner side to surround a target substrate (W). On the side to be exposed to plasma, the surfaces of the inner region (12a) and outer region (12c) consist essentially of a dielectric, while the surface of the middle region (12b) consists essentially of a conductor. The middle region (12b) is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate (W). If there is no middle region (12b), the peak of plasma density appears substantially directly above the peripheral edge of the target substrate (W).