Patents by Inventor Takaaki Nezu

Takaaki Nezu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10978275
    Abstract: There is provision of a showerhead assembly including a plate provided with multiple gas holes. Each of the gas holes has a first opening, a second opening, and a gas passage disposed between the first opening and the second opening. The gas passage has a first portion communicating with the first opening and a second portion communicating with the second opening. The second portion has a funnel-like shape or a bell-like shape, and an edge of the second opening is rounded.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: April 13, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Takaaki Nezu, Yoshitaka Tamura
  • Publication number: 20190362947
    Abstract: There is provision of a showerhead assembly including a plate provided with multiple gas holes. Each of the gas holes has a first opening, a second opening, and a gas passage disposed between the first opening and the second opening. The gas passage has a first portion communicating with the first opening and a second portion communicating with the second opening. The second portion has a funnel-like shape or a bell-like shape, and an edge of the second opening is rounded.
    Type: Application
    Filed: May 24, 2019
    Publication date: November 28, 2019
    Inventors: Takaaki NEZU, Yoshitaka TAMURA
  • Patent number: 9048191
    Abstract: A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: June 2, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Shuichiro Uda, Takaaki Nezu, Shinji Fuchigami, Koji Maruyama
  • Publication number: 20140113450
    Abstract: A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
    Type: Application
    Filed: June 12, 2012
    Publication date: April 24, 2014
    Inventors: Shuichiro Uda, Takaaki Nezu, Shinji Fuchigami, Koji Maruyama
  • Patent number: 7767055
    Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
    Type: Grant
    Filed: December 2, 2005
    Date of Patent: August 3, 2010
    Assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba
    Inventors: Shinji Himori, Noriaki Imai, Katsumi Horiguchi, Takaaki Nezu, Shoichiro Matsuyama, Hiroki Matsumaru, Toshihiro Hayami, Kazuya Nagaseki, Itsuko Sakai, Tokuhisa Ohiwa, Yoshikazu Sugiyasu
  • Patent number: 7678225
    Abstract: A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: March 16, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Takaaki Nezu, Katsumi Horiguchi, Daisuke Hayashi, Toshiya Tsukahara
  • Publication number: 20060118044
    Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
    Type: Application
    Filed: December 2, 2005
    Publication date: June 8, 2006
    Inventors: Shinji Himori, Noriaki Imai, Katsumi Horiguchi, Takaaki Nezu, Shoichiro Matsuyama, Hiroki Matsumaru, Toshihiro Hayami, Kazuya Nagaseki, Itsuko Sakai, Tokuhisa Ohiwa, Yoshikazu Sugiyasu
  • Publication number: 20040074605
    Abstract: A focus ring for a plasma processing apparatus has an inner region (12a), middle region (12b), and outer region (12c), disposed in this order from the inner side to surround a target substrate (W). On the side to be exposed to plasma, the surfaces of the inner region (12a) and outer region (12c) consist essentially of a dielectric, while the surface of the middle region (12b) consists essentially of a conductor. The middle region (12b) is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate (W). If there is no middle region (12b), the peak of plasma density appears substantially directly above the peripheral edge of the target substrate (W).
    Type: Application
    Filed: August 15, 2003
    Publication date: April 22, 2004
    Inventors: Takaaki Nezu, Katsumi Horiguchi, Daisuke Hayashi, Toshiya Tsukahara
  • Patent number: D911985
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: March 2, 2021
    Assignee: Tokyo Electron Limited
    Inventors: Takaaki Nezu, Yoshitaka Tamura