Abstract: Disclosed are photosensitive resin compositions capable of forming positive resin films with excellent heat shape retention. The photosensitive resin compositions comprises a polymer having a monomer unit represented by the following general formula (I) and a polyamideimide: where R1 is a single chemical bond or a divalent C1-C6 hydrocarbon group which may have a substituent, and R2 is a hydrogen or a monovalent C1-C6 hydrocarbon group which may have a substituent.

Abstract: A plasma etching method for etching a multilayer laminate in which a silicon oxide film and a silicon nitride film are stacked includes an etching step of plasma etching the silicon oxide film and the silicon nitride film using a gas of a non-bromine-containing fluorocarbon together with a gas of a bromine-containing fluorocarbon compound represented by a compositional formula C3H2BrF3.

Abstract: A negative photosensitive resin composition contains an alkali-soluble resin, a non-ionic photoacid generator, and a sensitizer.

Abstract: Disclosed are photosensitive resin compositions capable of forming positive resin films with excellent heat shape retention. The photosensitive resin compositions comprises a polymer having a monomer unit represented by the following general formula (I) and a polyamideimide: where R1 is a single chemical bond or a divalent C1-C6 hydrocarbon group which may have a substituent, and R2 is a hydrogen or a monovalent C1-C6 hydrocarbon group which may have a substituent.

Abstract: A plasma etching method according to the present disclosure includes a first etching step of performing plasma etching of the silicon nitride film on the workpiece by supplying a processing gas containing a gas of a compound represented by a composition formula C3H2BrF3 including a 2-bromo-3,3,3-trifluoropropene gas, a (Z)-1-bromo-3,3,3-trifluoropropene gas, an (E)-1-bromo-3,3,3-trifluoropropene gas, and/or a 3-bromo-2,3,3-trifluoropropene gas into the processing chamber, such that a ratio CF2/F obtained by emission spectrometry of the gas of the compound represented by the composition formula C3H2BrF3 is at least 0.33 within the processing chamber.

Abstract: A plasma etching method according to the present disclosure includes a first etching step of performing plasma etching of the silicon nitride film on the workpiece by supplying a processing gas containing a gas of a compound represented by a composition formula C3H2BrF3 including a 2-bromo-3,3,3-trifluoropropene gas, a (Z)-1-bromo-3,3,3-trifluoropropene gas, an (E)-1-bromo-3,3,3-trifluoropropene gas, and/or a 3-bromo-2,3,3-trifluoropropene gas into the processing chamber, such that a ratio CF2/F obtained by emission spectrometry of the gas of the compound represented by the composition formula C3H2BrF3 is at least 0.33 within the processing chamber.

Abstract: A plasma etching method for etching a multilayer laminate in which a silicon oxide film and a silicon nitride film are stacked includes an etching step of plasma etching the silicon oxide film and the silicon nitride film using a gas of a non-bromine-containing fluorocarbon together with a gas of a bromine-containing fluorocarbon compound represented by a compositional formula C3H2BrF3.

Abstract: The present invention provides a dense silicic film and a producing method thereof. This method comprises coating a composition for coating film, which comprises a polymer having a silazane bond on a substrate, on a substrate, irradiating with light having a maximal peak in the range of 160-179 nm wavelength, and then irradiating with light having 10-70 nm wavelength longer maximal peak wavelength than the light used in the previous irradiation.

Abstract: The present invention provides a dense silicic film and a producing method thereof. This method comprises coating a composition for coating film, which comprises a polymer having a silazane bond on a substrate, on a substrate, irradiating with light having a maximal peak in the range of 160-179 nm wavelength, and then irradiating with light having 10-70 nm wavelength longer maximal peak wavelength than the light used in the previous irradiation.

Abstract: An electronic device having a liquid crystal shutter is disclosed. A liquid crystal shutter is provided in an area formed by expanding a liquid crystal display. The liquid crystal shutter includes a rear polarizer, a rear glass substrate, a segmented electrode, a liquid crystal, a counter electrode, a front glass substrate, a shutter aperture, and a front polarizer. A camera module is disposed behind the rear polarizer. A voltage applied to the segmented electrode can be controlled to visually expose or hide the lens of the camera module from a shutter aperture.

Abstract: An electronic device having a liquid crystal shutter is disclosed. A liquid crystal shutter is provided in an area formed by expanding a liquid crystal display. The liquid crystal shutter includes a rear polarizer, a rear glass substrate, a segmented electrode, a liquid crystal, a counter electrode, a front glass substrate, a shutter aperture, and a front polarizer. A camera module is disposed behind the rear polarizer. A voltage applied to the segmented electrode can be controlled to visually expose or hide the lens of the camera module from a shutter aperture.

Abstract: A method for fabricating a semiconductor device, the method comprising: forming a metal containing film on a substrate; exposing the metal containing film to an ammonia radical in a reaction chamber; evacuating gas generated in the exposing by supplying an inert gas into the reaction chamber; and after repeating the exposing and the supplying a predetermined number of times, forming a silicon nitride film covering the metal containing film in the reaction chamber without atmospheric exposure.

Abstract: There is provided a method for trench isolation structure formation, which produces neither voids nor cracks within a groove. This method comprises the steps of: forming a groove on a surface of a silicon substrate; coating a polysilazane solution; prebaking the coating at a prebaking temperature regulated so that the temperature is raised in a temperature range of 50° C. to 400° C. over time; curing the coating at a temperature above the maximum prebaking temperature; and polishing and etching the film. The prebaking is carried out while raising the temperature either stepwise in two or more stages or in a monotonically increasing manner.

Abstract: A liquid crystal power supply is provided which generates a high-precision drive power supply voltage supplied to a driver circuit by using a low-precision reference voltage generating circuit. The power supply circuit includes a DC/DC converter which generates a voltage having a size based on an oscillation signal from a power supply voltage and outputs the generated voltage as a drive power supply voltage; a stabilized power supply circuit which generates a highest-level reference potential for generating a gray-scale voltage in a driver circuit; a comparison unit which outputs a difference voltage according to a difference between the drive power supply voltage and the highest-level reference potential; an internal reference voltage generating unit; an error amplifying unit which amplifies a difference between the reference voltage and the difference voltage; and a PWM conversion unit which outputs an oscillation signal in response to the amplified difference.

Abstract: A display device capable of reducing screen flickering or flickers is dislcosed. More particularly, a technology for preventing an occurrence of flickers in the liquid-crystal display device of an active matrix type is disclosed. In a first frame, a drive voltage of a polarity determined in units of row based on a random number is applied. In a sequential second frame, a drive voltage of a polarity reverse to the polarity in the first frame is applied. The patterns of the polarities are alternately repeated.

Abstract: A liquid crystal power supply is provided which generates a high-precision drive power supply voltage supplied to a driver circuit by using a low-precision reference voltage generating circuit. The power supply circuit includes a DC/DC converter which generates a voltage having a size based on an oscillation signal from a power supply voltage and outputs the generated voltage as a drive power supply voltage; a stabilized power supply circuit which generates a highest-level reference potential for generating a gray-scale voltage in a driver circuit; a comparison unit which outputs a difference voltage according to a difference between the drive power supply voltage and the highest-level reference potential; an internal reference voltage generating unit; an error amplifying unit which amplifies a difference between the reference voltage and the difference voltage; and a PWM conversion unit which outputs an oscillation signal in response to the amplified difference.

Abstract: A voltage supply circuit includes transistors that are inserted between a plurality of output terminals. Reference voltages, required for respective nodes, are outputted by controlling the conductance of the transistors. Differential amplifier circuits are connected to the transistors, and outputs from the output terminals are inputted to the differential amplifier circuits. The differential amplifier circuits controls the conductance of the transistors based on differences between reference voltages and the outputs of the output terminals. Power to the differential amplifier circuits is supplied from the respective power source circuits, and is provided independently of the outputs from the transistors.

Abstract: A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sup.1, R.sup.2 and R.sup.3 is a hydrogen atom.

Abstract: A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sub.1, R.sup.2 and R.sup.3 is a hydrogen atom.