Abstract: A method of manufacturing an optical member includes forming a first layer on a light transmissive substrate by atomic layer deposition, converting a surface layer of the first layer into a boehmite layer, and forming a second layer by atomic layer deposition so as to cover the boehmite layer. The first layer includes aluminum oxide and has a first thickness. The second layer has a second thickness less than the first thickness.

Abstract: A light emitting device includes a light emitting element and a light reflecting member that reflects light emitted from the light emitting element. The light reflecting member comprises plate-shaped light reflective particles, silica, and an alkali metal. An average particle size of the light reflective particles is 0.6 ?m to 43 ?m, and an average aspect ratio of the light reflective particles is 10 or higher.

Abstract: A light emitting device includes: a base having an upper face; a light emitting element mounted on the upper face of the base; one or more bonding members disposed on the upper face of the base outward of the light emitting element; a light transmissive member bonded to a portion of the upper face of the base by the one or more bonding members; and a protective film that continuously covers the light emitting element, the upper face of the base, lateral faces of the one or more bonding members, and a lower face of the light transmissive member. A gap is located between the upper face of the base and the lower face of the light transmissive member and configured to allow a space in which the light emitting element is mounted to communicate with an outside of the light emitting device, wherein the gap is defined by the upper face of the base, the lower face of the light transmissive member, and the one or more bonding members.

Abstract: A light emitting module includes red, green and blue light sources, and a light diffusing member is arranged above the light sources. The red light source includes a first light emitting element configured to emit light in a range from ultraviolet to blue, a first phosphor layer containing a first phosphor configured to emit red light, and a first film configured to transmit red light and block light in the range from ultraviolet to blue. The green light source includes a second light emitting element configured to emit light in the range from ultraviolet to blue, a second phosphor layer containing a second phosphor configured to emit green light, and a second film configured to transmit green light and block light in the range from ultraviolet to blue. The blue light source includes a third light emitting element configured to emit light in the range from ultraviolet to blue.

Abstract: A light emitting module includes red, green and blue light sources, and a light diffusing member is arranged above the light sources. The red light source includes a first light emitting element configured to emit light in a range from ultraviolet to blue, a first phosphor layer containing a first phosphor configured to emit red light, and a first film configured to transmit red light and block light in the range from ultraviolet to blue. The green light source includes a second light emitting clement configured to emit light in the range from ultraviolet to blue, a second phosphor layer containing a second phosphor configured to emit green light, and a second film configured to transmit green light and block light in the range from ultraviolet to blue. The blue light source includes a third light emitting element configured to emit light in the range from ultraviolet to blue.

Abstract: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

Abstract: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

Abstract: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

Abstract: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

Abstract: A method of manufacturing a light emitting device includes providing a light emitting element; and forming a protective film on a surface of the light emitting element, wherein the step of forming the protective film includes: (i) providing first quantity of oxygen at the surface of the light emitting element, (ii) combining a first quantity of a first metal with the first quantity of oxygen, (iii) combining a second quantity of oxygen with the first quantity of metal, (iv) combining a first quantity of a second metal, different from the first metal, with the second quantity of oxygen and first quantity of the first metal, and (v) combining a third quantity of oxygen with the first quantity of the second metal.

Abstract: A method of manufacturing a light emitting device includes providing a light emitting element; and forming a protective film on a surface of the light emitting element, wherein the step of forming the protective film includes: (i) providing first quantity of oxygen at the surface of the light emitting element, (ii) combining a first quantity of a first metal with the first quantity of oxygen, (iii) combining a second quantity of oxygen with the first quantity of metal, (iv) combining a first quantity of a second metal, different from the first metal, with the second quantity of oxygen and first quantity of the first metal, and (v) combining a third quantity of oxygen with the first quantity of the second metal.

Abstract: A manually operated gear shift mechanism for a motorcycle, or the like, includes a cable-driven pulley system operative to move a clutch to alternate operative positions in a power transmission system. The cables are arranged such that one is in tension regardless of the direction of rotation of the pulleys. The handle for operating the pulleys carries a releasable locking mechanism operative to secure the pulleys and, concomitantly, the clutch in their respective operative positions.

Abstract: A manually operated gear shift mechanism for a motorcycle, or the like, includes a cable-driven pulley system operative to move a clutch to alternate operative positions in a power transmission system. The cables are arranged such that one is in tension regardless of the direction of rotation of the pulleys. The handle for operating the pulleys carries a releasable locking mechanism operative to secure the pulleys and, concomitantly, the clutch in their respective operative positions.