Abstract: Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.

Abstract: A sintered magnet contains Sm—Fe—N-based crystal grains and has high coercivity; and a magnetic powder is capable of forming a sintered magnet without lowering the coercivity even if heat is generated in association with the sintering. A sintered magnet comprises a crystal phase composed of a plurality of Sm—Fe—N-based crystal grains and a nonmagnetic metal phase present between the Sm—Fe—N crystal grains adjacent to each other, wherein a ratio of Fe peak intensity IFe to SmFeN peak intensity ISmFeN measured by an X-ray diffraction method is 0.2 or less. A magnetic powder comprises Sm—Fe—N-based crystal particles and a nonmagnetic metal layer covering surfaces of the Sm—Fe—N crystal particles.

Abstract: A Sm—Fe—N-based magnet powder that includes a Sm—Fe—N-based magnetic material powder, wherein an average particle size of the Sm—Fe—N-based magnetic material powder is not larger than 5 ?m, and a full width at half maximum of a diffraction peak of a (220) plane in an X-ray diffraction profile of the Sm—Fe—N-based magnetic material powder is not larger than 0.0033 ?. Also disclosed is a Sm—Fe—N-based sintered magnet that includes a sintered body of a Sm—Fe—N-based magnetic material, wherein an average grain size of crystal grains of the Sm—Fe—N-based magnetic material is not larger than 5 ?m, and a full width at half maximum of a diffraction peak of a (220) plane in an X-ray diffraction profile of the Sm—Fe—N-based magnetic material is not larger than 0.0033 ?.

Abstract: An alkaline battery includes a tubular battery case, a positive electrode filled in the battery case and including a stack of n pieces of hollow tubular pellets, a negative electrode disposed in hollow portions of the pellets, a separator disposed between the positive electrode and the negative electrode, and an alkaline electrolytic solution. The battery case includes a body portion having a thickness of 0.15 mm or less. The positive electrode contains manganese dioxide and a conductive agent, and n is an integer of 3 or more. First resistance is higher than second resistance, where the first resistance is resistance of at least one pellet positioned in a middle portion in a height direction of the stack, and the second resistance is resistance of at least one pellet positioned in end portions in the height direction of the stack.

Abstract: A sintered magnet contains Sm—Fe—N-based crystal grains and has high coercivity; and a magnetic powder is capable of forming a sintered magnet without lowering the coercivity even if heat is generated in association with the sintering. A sintered magnet comprises a crystal phase composed of a plurality of Sm—Fe—N-based crystal grains and a nonmagnetic metal phase present between the Sm—Fe—N crystal grains adjacent to each other, wherein a ratio of Fe peak intensity IFe to SmFeN peak intensity ISmFeN measured by an X-ray diffraction method is 0.2 or less. A magnetic powder comprises Sm—Fe—N-based crystal particles and a nonmagnetic metal layer covering surfaces of the Sm—Fe—N crystal particles.

Abstract: A first calculation unit calculates a moving average (dose rate) using a relatively long averaging period (T). A second calculation unit calculates an integrated value (dose rate) using a relatively short time constant (?). In a state in which the moving average is displayed, an alarm determination unit identifies a dose abnormality on the basis of the integrated value. Within a measurement start period, a display switching determination unit identifies a constant dose rate state on the basis of the integrated value. A restoration determination unit identifies the restoration of a dose rate on the basis of the integrated value. If a dose rate is displayed using a large degree of smoothing, sudden increases, and the like, in the dose rate can be identified quickly.

Abstract: A plate material vertical processing line that is capable of subjecting large-sized and thinned glass plates to scribing, venting, etc without degrading their quality, comprises a plurality of processing devices each having a modular structure; wherein each of the processing devices includes a platform; a belt conveyor that is mounted on the platform and is configured to convey a glass plate placed in a substantially upright position while supporting a lower end of the glass plate; and a fluid guide that is mounted on the platform and is configured to apply a fluid pressure to a surface of the glass plate to support the glass plate in the substantially upright position and in a non-contact state; and wherein the processing devices include a combination of at least two processing devices selected from a scribing device, a venting device, a chamfering device, a cleaning agent washing device, a water washing device, a high-pressure water spray device, and a glass plate turn device.

Abstract: A semiconductor device is provided which comprises a thermally radiative and electrically conductive support plate 1; and a regulatory semiconducting element 2 mounted on one main surface of support plate 1 through an insulator 3. Insulator 3 comprises an insulative layer 3a mounted on support plate 1 and an adiabatic layer 3b interposed between insulative layer 3a and regulatory semiconducting element 2 to fully protect regulatory semiconducting element 2 from heated environment therearound in the semiconductor device.

Abstract: A plate material vertical processing line that is capable of subjecting large-sized and thinned glass plates to scribing, venting, etc without degrading their quality, comprises a plurality of processing devices each having a modular structure; wherein each of the processing devices includes a platform; a belt conveyor that is mounted on the platform and is configured to convey a glass plate placed in a substantially upright position while supporting a lower end of the glass plate; and a fluid guide that is mounted on the platform and is configured to apply a fluid pressure to a surface of the glass plate to support the glass plate in the substantially upright position and in a non-contact state; and wherein the processing devices include a combination of at least two processing devices selected from a scribing device, a venting device, a chamfering device, a cleaning agent washing device, a water washing device, a high-pressure water spray device, and a glass plate turn device.

Abstract: A semiconductor device is provided which comprises a thermally radiative and electrically conductive support plate 1; and a regulatory semiconducting element 2 mounted on one main surface of support plate 1 through an insulator 3. Insulator 3 comprises an insulative layer 3a mounted on support plate 1 and an adiabatic layer 3b interposed between insulative layer 3a and regulatory semiconducting element 2 to fully protect regulatory semiconducting element 2 from heated environment therearound in the semiconductor device.

Abstract: A process for purifying difluoromethane, which comprises subjecting a mixture comprising difluoromethane and hydrogen fluoride to extraction treatment with at least one extractant selected from the following (a) and (b) to separate it by liquid separation into an extractant layer comprising the difluoromethane and the extractant as the main components, and a hydrogen fluoride layer comprising the hydrogen fluoride as the main component, and separating the difluoromethane from the extractant layer: (a) Dichloromethane (b) Chlorofluoromethane.

Abstract: A process for purifying difluoromethane, which comprises subjecting a mixture comprising difluoromethane and hydrogen fluoride to extraction treatment with at least one extractant selected from the following (a) and (b) to separate it by liquid separation into an extractant layer comprising the difluoromethane and the extractant as the main components, and a hydrogen fluoride layer comprising the hydrogen fluoride as the main component, and separating the difluoromethane from the extractant layer:

Abstract: A method for improving the qualities of meat which comprises treating a meat piece with an ester represented by the following formula (1): ##STR1## wherein one of R.sup.1 and R.sup.2 represents a saturated or unsaturated monocarboxylic acid residue having 2 to 24 carbon atoms while the other represents a dicarboxylic acid residue;a meat piece which has been treated by this method, and a composition comprising the ester and a protease are disclosed. By treating a meat (for example, cattle meat, fowl meat) in accordance with the method of the present invention, a meat piece having a tender texture and a high juiciness can be obtained, in particular, in the case of a meat piece of a certain size or larger or minced meat.

Abstract: A method for manufacturing plastic encapsulated electronic semiconductor devices is disclosed in which a support pad is firmly fixed by slidable means and also by mold halves in molding operation. Slidable means is moved outward of a cavity when it is filled with the plastic encapsulating material to the half volume. Spaces, which are formed after movement of slidable means, are filled with the plastic encapsulating material directly poured through a gate. The encapsulated semiconductor devices indicate excellent thermal radiation and dielectric strength characteristics without formation of voids or unfilled portions in the plastic.

Abstract: Apparatus for manufacturing plastic encapsulated electronic semiconductor devices is disclosed in which a support pad is firmly fixed by slidable means and also by mold halves in molding operation. Slidable means is moved outward of a cavity when it is filled with the plastic encapsulating material to the half volume. Spaces, which are formed after movement of slidable means, are filled with the plastic encapsulating material directly poured through a gate. The encapsulated semiconductor devices indicate excellent thermal radiation and dielectric strength characteristics without formation of voids or unfilled portions in the plastic.

Abstract: A method for manufacturing plastic encapsulated electronic semiconductor devices is disclosed in which a support pad is firmly fixed by slidable means and also by mold halves in molding operation. Slidable means is moved outward of a cavity when it is filled with the plastic encapsulating material to the half volume. Spaces, which are formed after movement of slidable means, are filled with the plastic encapsulating material directly poured through a gate. The encapsulated semiconductor devices indicate excellent thermal radiation and dielectric strength characteristics without formation of voids or unfilled portions in the plastic.