Patents by Inventor Takachika Imato

Takachika Imato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 7190010
    Abstract: A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head portion spaced from the semiconductor substrate. The T-shaped gate electrode includes a gate metal containing a material reactive with water. The moisture-proof insulating film is located only in the vicinity of the leg portion and covers a side surface of the leg portion of the T-shaped gate electrode. The interlayer dielectric film is located between the overhanging head portion of the T-shaped gate electrode and the semiconductor substrate and has a dielectric constant that is lower than that of the moisture-proof insulating film.
    Type: Grant
    Filed: December 15, 2004
    Date of Patent: March 13, 2007
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Takachika Imato, Hiroshi Matsuoka
  • Semiconductor device and method of manufacturing the same
    Publication number: 20050224846
    Abstract: A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head portion spaced from the semiconductor substrate. The T-shaped gate electrode includes a gate metal containing a material reactive with water. The moisture-proof insulating film is located only in the vicinity of the leg portion and covers a side surface of the leg portion of the T-shaped gate electrode. The interlayer dielectric film is located between the overhanging head portion of the T-shaped gate electrode and the semiconductor substrate and has a dielectric constant that is lower than that of the moisture-proof insulating film.
    Type: Application
    Filed: December 15, 2004
    Publication date: October 13, 2005
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Takachika Imato, Hiroshi Matsuoka