Abstract: A mask layer is formed on a conductive layer covering not only a central area assigned to integrated circuits but also a vacant peripheral area of a semiconductor wafer, and an electroplating system allows metallic miniature patterns to grow on the conductive layer over the vacant peripheral area as well as extremely small areas of the conductive layer over the central area so as to make current fluctuation negligible.

Abstract: A FET has comb-shaped electrode assemblies for source, drain and gate of the FET. Each of the source and drain electrode assemblies has a plurality of electrodes contacting the active region of the FET and formed as a first layer metal laminate, and a bus bar connecting the electrodes together to a corresponding pad and formed as a second layer metal laminate. The gate electrode layer has a plurality of gate electrodes contacting the active layer in Schottky contact, a gate bus bar connecting the gate electrodes together, a gate pad connected to the gate bus bar. The gate bus bar is formed as a first layer metal laminate intersecting the stem portion of the comb-shaped source bus bar. The two-layer metal structure of the FET reduces the number of photolithographic steps and thereby fabrication costs of the FET.