Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Abstract: [Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] To provide a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C), wherein the solvent (C) comprises water (C-1); and the content of the soluble solute (B) is 0.1 to 500 mass % based on water (C-1).

Abstract: Problem: A replacement liquid of liquid filling between resist patterns and a method for producing resist patterns using the same. Means of solution: To provide a replacement liquid of liquid filling between resist patterns comprising a sulfonyl group-containing compound (A); a nitrogen-containing compound (B); and a solvent (C).

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Abstract: To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. The present invention is a substrate cleaning solution comprising a polymer (A), an alkaline component (B), and a solvent (C), provided that the alkaline component (B) does not comprise ammonia.

Abstract: [Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Abstract: To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. Disclosed is a composition for gap formation comprising a polymer and a solvent: wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2): Ar1-L1??(1) Ar2-L2-Ar2???(2) [each of Ar1, Ar2 and Ar2? is independently a substituted or unsubstituted aromatic group; and each of L1 and L2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3): {Ar3 is an aromatic group; and L3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].

Abstract: [Problem] To provide such a composition for producing a sacrifice layer as has excellent properties in both heat resistance and storage stability, and also to provide a process for producing a semiconductor device using the composition. [Solution] Disclosed is a composition for producing a sacrifice layer. The composition comprises a solvent and a polymer having a repeating unit containing a nitrogen atom with a lone pair, and contains particular transition metals only in a very low content. Also disclosed is a process using the composition as a sacrificial material for producing a semiconductor device comprising a porous material.

Abstract: [Problem] To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. [Solution] Disclosed is a composition for gap formation comprising a polymer and a solvent: wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2): ?Ar1-L1???(1) ?Ar2-L2-Ar2????(2) [each of Ar1, Ar2 and Ar2? is independently a substituted or unsubstituted aromatic group; and each of L1 and L2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3): {Ar3 is an aromatic group; and L3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].

Abstract: To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape, and also to provide a pattern formation method employing that. A composition for forming a topcoat layer, containing a solvent and a triphenylene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development. The composition may further contain a polymer.

Abstract: [Object] To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape, and also to provide a pattern formation method employing that. [Means for solving] A composition for forming a topcoat layer, containing a solvent and a triphenylene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development. The composition may further contain a polymer.