Abstract: Left- and right-eye captured images are output upon reception of light beams having passed through one imaging optical system, and the difference, between the left- and right-eye captured images, of each of subjects included in the left- and right-eye captured images is detected. An extraction image extracted from a region which includes a main subject and has a predetermined size is output for each of the left- and right-eye captured images. At this time, the region is set so that the difference, between the left- and right-eye captured images, of a subject which is different from the main subject and included in both the extraction images has a predetermined value.

Abstract: An image pickup apparatus (100) that generates a three-dimensional image, includes an image pickup element (114) including a micro lens (2) and a pixel unit cell (1) including a plurality of pixels (1a, 1b) arranged to receive light from the microlens (2), wherein the image pickup element is configured to output separated first image and second image signals for respective pixels of the pixel unit cell, a parallax detector (123) configured to calculate a parallax comprising an image shift amount between the first image signal and the second image signal, and an image correcting portion (120) configured to perform a correction to change the parallax, wherein the amount of change of the parallax depends on a change of the aperture stop (111).

Abstract: In a photoelectric conversion apparatus that adds signals of a plurality of photoelectric conversion elements included in photoelectric conversion units, each of the plurality of photoelectric conversion elements includes a first semiconductor region of a first conductivity type that collects signal carriers. The first semiconductor regions included in photoelectric conversion elements that are included in each of the photoelectric conversion units and that are arranged adjacent to each other sandwich a second semiconductor region of a second conductivity type. A height of a potential barrier for the signal carriers generated in a certain region of the second semiconductor region is smaller than a height of a potential barrier for the signal carriers generated in a third semiconductor region between each of the first semiconductor regions and an overflow drain region of the first conductivity type.

Abstract: An image pickup apparatus includes an image pickup unit including a plurality of photoelectric conversion elements provided correspondingly to each of microlenses arranged two-dimensionally, reads out a first signal through addition from the photoelectric conversion elements corresponding to the microlense, reads out a second signal from one of the photoelectric conversion elements corresponding to the microlense, and sets one of a first and second read-out modes to read signals from the image pickup unit in accordance with a photographing condition, wherein the first and second read-out modes differ in read-out density of the second signal in a read-out area in accordance with one of a thinning-out rate and an addition rate of a area from which the second signal is read out being different as compared to a area from which the first signal is read out.

Abstract: An image sensing device comprises pixels having micro lenses; a plurality of photoelectric conversion regions arranged in the pixels; and a first adding unit which adds together signals from the plurality of photoelectric conversion regions arranged in the same pixel; wherein the pixels are arranged in a row direction and a column direction, mixed among the pixels are an additional reading region in which addition is performed by the first adding unit and an individual reading region in which addition is not performed by the first adding unit, and a signal is read from at least one photoelectric conversion region, and the number of pixels in a horizontal direction in the individual reading region is constant in the row direction.

Abstract: An image sensor includes a plurality of pixels arranged in matrix, each pixel including a plurality of photoelectric conversion portions, and analog/digital converters configured to convert analog signals from pixels into digital signals provided by column. The analog/digital converter performs a first operation of converting an analog signal corresponding to the reset level into a digital signal, a second operation of converting analog signals obtained from some portions of the plurality of photoelectric conversion portions into digital signals, and a third operation of converting analog signals obtained from all the plurality of photoelectric conversion portions into digital signals.

Abstract: In a photoelectric conversion apparatus that adds signals of a plurality of photoelectric conversion elements included in photoelectric conversion units, each of the plurality of photoelectric conversion elements includes a first semiconductor region of a first conductivity type that collects signal carriers. The first semiconductor regions included in photoelectric conversion elements that are included in each of the photoelectric conversion units and that are arranged adjacent to each other sandwich a second semiconductor region of a second conductivity type. A height of a potential barrier for the signal carriers generated in a certain region of the second semiconductor region is smaller than a height of a potential barrier for the signal carriers generated in a third semiconductor region between each of the first semiconductor regions and an overflow drain region of the first conductivity type.

Abstract: In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region.

Abstract: The image pickup apparatus includes an image sensor photoelectrically converting paired object images formed by light fluxes from mutually different pupil areas of an image capturing optical system, a signal producing part producing, by using output from each of plural pixel lines in a focus detection area in the image sensor, paired image signals corresponding to the paired object images for each pixel line, a calculating part calculating a defocus amount by using the paired image signals produced for each pixel line. The calculating part shifts the paired image signals relatively, produce first correlation data showing change of a correlation value of the paired image signals according to their relative shift amount, adds the first correlation data produced for the respective plural pixel lines to produce second correlation data, and calculates the defocus amount from the second correlation data.

Abstract: An image capturing apparatus comprises: an image sensor that includes a plurality of pixels, each including a plurality of photoelectric conversion elements; a readout unit that reads out a signal from a portion of the photoelectric conversion elements of each pixel as a first signal and reads out a sum of signals from the plurality of photoelectric conversion elements of each pixel as an image signal; a generation unit that generates a second signal for each pixel using the image signal and the first signal; and a calculation unit that calculates a moving amount of a focus lens for achieving an in-focus state based on a phase difference between the first signal and the second signal. The calculation unit performs the calculation without using a signal from a defective line.

Abstract: In a photoelectric conversion apparatus that adds signals of a plurality of photoelectric conversion elements included in photoelectric conversion units, each of the plurality of photoelectric conversion elements includes a first semiconductor region of a first conductivity type that collects signal carriers. The first semiconductor regions included in photoelectric conversion elements that are included in each of the photoelectric conversion units and that are arranged adjacent to each other sandwich a second semiconductor region of a second conductivity type. A height of a potential barrier for the signal carriers generated in a certain region of the second semiconductor region is smaller than a height of a potential barrier for the signal carriers generated in a third semiconductor region between each of the first semiconductor regions and an overflow drain region of the first conductivity type.

Abstract: The image pickup apparatus includes an image sensor photoelectrically converting paired object images formed by light fluxes from mutually different pupil areas of an image capturing optical system, a signal producing part producing, by using output from each of plural pixel lines in a focus detection area in the image sensor, paired image signals corresponding to the paired object images for each pixel line, a calculating part calculating a defocus amount by using the paired image signals produced for each pixel line. The calculating part shifts the paired image signals relatively, produce first correlation data showing change of a correlation value of the paired image signals according to their relative shift amount, adds the first correlation data produced for the respective plural pixel lines to produce second correlation data, and calculates the defocus amount from the second correlation data.

Abstract: An image capturing apparatus comprises: an image sensor that includes a plurality of pixels, each including a plurality of photoelectric conversion elements; a readout unit that reads out a signal from a portion of the photoelectric conversion elements of each pixel as a first signal and reads out a sum of signals from the plurality of photoelectric conversion elements of each pixel as an image signal; a generation unit that generates a second signal for each pixel using the image signal and the first signal; and a calculation unit that calculates a moving amount of a focus lens for achieving an in-focus state based on a phase difference between the first signal and the second signal. The calculation unit performs the calculation without using a signal from a defective line.

Abstract: An image sensing apparatus has a plurality of pixels arranged two dimensionally, each pixel containing a photoelectric converter that outputs a photoelectrically converted signal in response to a quantity of received light, an output unit containing a clamping circuit, a signal supply circuit that outputs a reference signal to the clamping circuit, a control unit that controls to clamp the reference signal prior to outputting the photoelectrically converted signal from the pixel to the clamping circuit, output the photoelectrically converted signal to the clamping circuit, and then output a noise signal from the pixel to the clamping circuit, and a differential circuit that subtracts the noise signal from the photoelectrically converted signal processed by the clamping circuit.

Abstract: An image sensor includes: a photoelectric conversion pixel having a photoelectric conversion element that performs photoelectric conversion, and a light guide formed of a first material in an interlayer insulation film above the photoelectric conversion element; and a light-shielded pixel having a photoelectric conversion element that performs photoelectric conversion, a light guide formed of a second material that is different from the first material in an interlayer insulation film above the photoelectric conversion element, and a light-shielding layer formed above the light guide.

Abstract: An image sensing device comprises pixels having micro lenses; a plurality of photoelectric conversion regions arranged in the pixels; and a first adding unit which adds together signals from the plurality of photoelectric conversion regions arranged in the same pixel; wherein the pixels are arranged in a row direction and a column direction, mixed among the pixels are an additional reading region in which addition is performed by the first adding unit and an individual reading region in which addition is not performed by the first adding unit, and a signal is read from at least one photoelectric conversion region, and the number of pixels in a horizontal direction in the individual reading region is constant in the row direction.

Abstract: In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region.

Abstract: An imaging apparatus includes an imaging element including a pixel portion having a plurality of photoelectric conversion units with respect to one micro lens and color filters which are regularly arranged for each micro lens. The imaging apparatus generates a first signal and a second signal for phase difference-type focus detection based on an output of the imaging element. Each of the first signal and the second signal consists of a plurality of unit signals, and the unit signal of each of the first signal and the second signal is a signal obtained by mixing image signals from the same combination of the color filters.

Abstract: An image capturing apparatus comprises: an image sensor that includes a plurality of pixels, each including a plurality of photoelectric conversion elements; a readout unit that reads out a signal from a portion of the photoelectric conversion elements of each pixel as a first signal and reads out a sum of signals from the plurality of photoelectric conversion elements of each pixel as an image signal; a generation unit that generates a second signal for each pixel using the image signal and the first signal; and a calculation unit that calculates a moving amount of a focus lens for achieving an in-focus state based on a phase difference between the first signal and the second signal. The calculation unit performs the calculation without using a signal from a defective line.

Abstract: In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region.