Abstract: A vehicular engagement member for a vehicle is provided. The vehicular engagement member includes a base portion, and an engagement portion integrally molded with the base portion and engageable with a vehicle through an engagement claw portion. The base portion has a wall portion disposed opposite to the engagement claw portion and extending along an extension direction, in which the engagement portion extends. The wall portion has a space portion at a position opposite to the engagement claw portion, and the space portion is formed by an opening or a recess.

Abstract: A photoelectric conversion apparatus includes a semiconductor layer in which pixels are arranged in a matrix, the pixels each including a photoelectric conversion portion and a transistor used for loading a signal from the photoelectric conversion portion, and multilayer wiring formed on the semiconductor layer and including a first wiring layer, a first inter-layer insulating layer, a second wiring layer, a second inter-layer insulating layer, and a third wiring layer in this order. The multilayer wiring includes a plurality of output lines for loading signals from the pixels. The output lines each include first wiring provided in the first wiring layer, second wiring provided in the second wiring layer, and a connecting portion penetrating the first inter-layer insulating layer to interconnect the first wiring and the second wiring. A thickness of the first inter-layer insulating layer is smaller than a thickness of the second inter-layer insulating layer.

Abstract: A photoelectric conversion device includes a pixel including an amplifier transistor generating a signal according to charge generated in a photoelectric conversion unit and a select transistor controlling an output of the signal, and an output line outputting the signal from the pixel. The photoelectric conversion unit includes a first semiconductor region for accumulating charge, the select transistor includes a second semiconductor region to which the output line is connected, and the pixel further includes a third semiconductor region being capable of discharging charge. The second semiconductor region is adjacent to the first semiconductor region via a first element isolation structure, and is adjacent to the third semiconductor region via a second element isolation structure.

Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

Abstract: An apparatus includes pixels each including a conversion unit. The conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type in order from a light incident surface side, and includes an in-pixel separation portion of the second conductivity type. The second semiconductor region includes a first end and a second end opposing the first end. The conversion unit further includes a fourth semiconductor region between the first and second ends. The in-pixel separation portion separates the first semiconductor region into a first region overlapping the first end and a second region overlapping the second end in a top view from the light incident surface side. A concentration of a second conductivity type impurity is lower in the fourth semiconductor region than in the in-pixel separation portion.

Abstract: A semiconductor device includes a plurality of wirings each having a damascene structure on a semiconductor layer, wherein the plurality of wirings includes a first wiring and a second wiring adjacent to each other, wherein the first wiring includes, along a direction in which the first wiring extends, a first portion, a second portion, and a third portion located between the first portion and the second portion, and wherein a width of the third portion is larger than each of a width of the first portion and a width of the second portion.

Abstract: A vehicle body front structure, including a front bumper face positioned in front of a front bumper beam, and an ornamental front panel located above the front bumper face; wherein the front panel includes at least a substantially vertically extending vertical surface and an inclined surface continuous with the vertical surface, and the inclined surface is provided with a transmitting member configured to transmit radio wave or light, a radar device or an image capturing device being positioned behind the transmitting member.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: A vehicle body front structure includes a front bumper face positioned in front of a front bumper beam, wherein the front bumper face includes an upper face member provided with a license plate mounting portion, and a lower face member provided with an external air introduction opening. The vehicle body front structure further includes a front panel positioned above the upper face member.

Abstract: In a vehicle body front structure, including a front hood (10) covering a front space (3) defined in a front part of a vehicle body (4) from above, a front panel (13) laterally extending along and under a front edge of the front hood and facing substantially in a fore and aft direction, the front panel defining an opening (13A) in an outboard part thereof, and a headlight (12) attached to the vehicle body and facing the opening of the front panel from behind the front panel, the headlight is attached to a rear side of the front panel via a bracket (40) which is positionally fixed to a periphery of the opening.

Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

Abstract: A solid state imaging device as an embodiment has a first transfer unit that includes a first gate and transfers charges from a photoelectric conversion portion to a holding portion; a second transfer unit that includes a second gate and transfers charges from the holding portion to a floating diffusion portion; and a third transfer unit that includes a third gate and drains charges from the photoelectric conversion portion to the charge draining portion. The impurity concentration of a second conductivity type in at least a part of a region under the first gate of the first transfer unit is lower than the impurity concentration of the second conductivity type in a region under the second gate of the second transfer unit and the impurity concentration of the second conductivity type in a region under the third gate of the third transfer unit.

Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

Abstract: A photoelectric conversion apparatus includes: a substrate having a photoelectric conversion portion; a gate electrode of a transfer transistor provided on the substrate and configured to transfer charges generated by the photoelectric conversion portion; a first film; a second film provided on the first film; and a contact plug being in contact with the second film and connected to the transfer transistor.

Abstract: A disclosed embodiment includes: semiconductor substrate including a pixel region in which a plurality of pixels are arranged, each of the pixels including a photoelectric conversion unit configured to accumulate charges generated from an incident light, a charge holding portion configured to hold the charges transferred from the photoelectric conversion unit, and an amplification unit including an input node configured to receive the charges transferred from the charge holding portion; a light-shielding portion arranged so as to cover at least the charge holding portion and extending over at least two or more of the plurality of pixels; a contact plug connected to the light-shielding portion; and a wiring connected to the contact plug to supply a fixed potential to the light-shielding portion via the contact plug.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: A vehicle body front structure includes a front bumper face positioned in front of a front bumper beam, wherein the front bumper face includes an upper face member provided with a license plate mounting portion, and a lower face member provided with an external air introduction opening. The vehicle body front structure further includes a front panel positioned above the upper face member.

Abstract: In a vehicle body front structure, including a front hood (10) covering a front space (3) defined in a front part of a vehicle body (4) from above, a front panel (13) laterally extending along and under a front edge of the front hood and facing substantially in a fore and aft direction, the front panel defining an opening (13A) in an outboard part thereof, and a headlight (12) attached to the vehicle body and facing the opening of the front panel from behind the front panel, the headlight is attached to a rear side of the front panel via a bracket (40) which is positionally fixed to a periphery of the opening.

Abstract: A vehicle body front structure, including a front bumper face positioned in front of a front bumper beam, and an ornamental front panel located above the front bumper face; wherein the front panel includes at least a substantially vertically extending vertical surface and an inclined surface continuous with the vertical surface, and the inclined surface is provided with a transmitting member configured to transmit radio wave or light, a radar device or an image capturing device being positioned behind the transmitting member.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.