Abstract: A forward Raman amplifier includes a plurality of pumping light sources with different wavelengths and the forward Raman amplifier, according to a fiber type or a zero-dispersion wavelength of the fiber, changes the number of pumping light sources to be emitted, changes a power ratio between the plurality of pumping light sources with the different wavelengths or changes wavelength characteristics of a gain, according to a fiber type.

Abstract: Provided is a backlight unit capable of increasing luminance and of reducing unevenness in luminance. The backlight unit includes: a light diffusing member provided to cover a light emitting element mounted on a surface of a substrate; and a first light reflective member having a hole portion opened larger in size than an outer shape of the light diffusing member, the first light reflective member being provided on the surface of the substrate while having the light diffusing member protrude from the hole portion. In addition, a second light reflective member is further provided on the surface of the substrate, and the second light reflective member covers at least a part of a region corresponding to a gap left between the light diffusing member and the hole portion of the first light reflective member.

Abstract: The present invention provides a semiconductor light emitting device comprising: a wiring substrate in which a pair of positive and negative electrodes are formed on a front surface of an insulating substrate, an LED arranged over one of the electrodes, or arranged to stretch over both of the electrodes and connected electrically to the positive and negative electrode pair, and a metal frame having, at the inner circumferential side thereof, a tapered face and arranged around the electrode pair on the front surface of wiring substrate, wherein the metal frame is jointed to the front surface of the wiring substrate through an adhesive layer, and a plating layer is formed on a surface of the metal frame and surfaces of the electrode pair.