Abstract: The present invention provides a high-precision alignment method, device and code for inspections that compare an inspection image with a reference image and detect defects from their differences. In one embodiment an inspection image and a reference image are divided into multiple regions. An offset is calculated for each pair of sub-images. Out of these multiple offsets, only the offsets with high reliability are used to determine an offset for the entire image. This allows high-precision alignment with little or no dependency on pattern density or shape, differences in luminance between images, and uneven luminance within individual images. Also, detection sensitivity is adjusted as necessary by monitoring alignment precision.

Abstract: A pattern inspection apparatus includes a light source which emits ultraviolet light, an irradiator which reduces coherency of the ultraviolet light and irradiates the coherency reduced ultraviolet light onto a specimen on which a pattern is formed through an objective lens, and a focus control means which projects light on the specimen from outside the objective lens, detects light reflected from the specimen by the projection and adjusts a height of the specimen relative to the objective lens. The apparatus further includes an image which forms an image of the specimen irradiated with the ultraviolet light and detects the formed image with a sensor, an image processor which processes a signal outputted from the sensor to detect a defect of the specimen, and a display which displays information of the defect detected by the image processor.

Abstract: An apparatus for inspecting pattern defects on microscopic circuit patterns, with high resolution, comprises: an objective lens for detecting an image of a sample; a UV laser beam illumination arrangement for illuminating onto a pupil of the objective lens; am arrangement for lowering coherency of the UV laser illumination; a detector of integration type; and an arrangement for processing detected signal thereof.

Abstract: In a defect inspecting apparatus, having contrast, brightness and appearance of a target for inspection and detection sensitivity of a defect changed depending on optical system conditions, and adapted to perform inspection by selecting an optimal test condition, even an unskilled user can easily select an optimal optical condition by quantitatively displaying evaluation values side by side when optical system conditions are changed. Moreover, by selecting an evaluation item having highest satisfaction based on a result of a series of test inspection, an optimal test condition can be automatically selected.

Abstract: The present invention relates to a pattern defect inspection method and apparatus that reveal ultramicroscopic defects on an inspection target in which ultramicroscopic circuit patterns are formed, and inspect the defects with high sensitivity and at a high speed. The present invention provides a pattern inspection apparatus for comparing the images of corresponding areas of two formed patterns that should be identical with each other, and judging any mismatched image area as a defect. The pattern inspection apparatus includes means for performing an image comparison process on a plurality of areas in a parallel manner. Further, the pattern inspection apparatus also includes means for converting the gradation of the image signals of compared images in each of a plurality of different processes. Therefore, the present invention can properly detect defects even if the same patterns of compared images differ in brightness.

Abstract: The inventive method and apparatus for detecting defects of a microscopic circuit pattern by imaging the pattern at high resolution comprises an objective lens for imaging the subject pattern, a laser illumination means for illuminating the pupil of the objective lens, means of diminishing the coherency of the laser illumination, an accumulative detector, and means of processing the signal detected by the detector. The method and apparatus are capable of imaging the subject pattern at high sensitivity and high speed based on the illumination by a short wavelength, which is indispensable for the enhancement of resolution, particularly based on a laser light source which is advantageous for practicing, with a resulting image being the same or better in quality as compared with an image resulting from the ordinary discharge tube illumination, whereby it is possible to detect microscopic defects at high sensitivity.

Abstract: In a defect inspecting apparatus, having contrast, brightness and appearance of a target for inspection and detection sensitivity of a defect changed depending on optical system conditions, and adapted to perform inspection by selecting an optimal test condition, even an unskilled user can easily select an optimal optical condition by quantitatively displaying evaluation values side by side when optical system conditions are changed. Moreover, by selecting an evaluation item having highest satisfaction based on a result of a series of test inspection, an optimal test condition can be automatically selected.

Abstract: The present invention relates to a tool for analyzing by priority a defect having a high possibility of causing an electrical failure when inspecting a particle and a pattern defect in a piece of work which constitutes an electronic device such as a semiconductor integrated circuit, and relates to a system therefor. On the basis of the result of comparison between defect information which is the result of inspection by an inspection tool and layout data stored in an auxiliary storage device, or on the basis of the result of reinspection by comparison between a defect and a wiring pattern as a background by an inspection processing operation unit, an object to be reviewed is selected using review conditions stored in the auxiliary storage device.

Abstract: Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

Abstract: In a pattern inspection apparatus for comparing images of corresponding areas of two patterns, which are formed so as to be identical, so as to judge that a non-coincident part of the images is a defect, the influence of unevenness in brightness of patterns caused by a difference of thickness or the like is reduced, whereby highly sensitive pattern inspection is realized. In addition, high-speed pattern inspection can be carried out without changing the image comparison algorithm. For this purpose, the pattern inspection apparatus operates to perform comparison processing of images in parallel in plural areas. Further, the pattern inspection apparatus operates to convert gradation of an image signal among compared images using different plural processing units such that, even in the case in which a difference of brightness occurs in an identical pattern among images, a defect can be detected correctly.

Abstract: In a defect inspection tool, since assigning an inspection recipe required for inspection, is a significantly laborious and time-consuming operation, this operation load is one of the causes of reduction in tool availability and thus needs to be relieved.

Abstract: The present invention relates to a tool for analyzing by priority a defect having a high possibility of causing an electrical failure when inspecting a particle and a pattern defect in a piece of work which constitutes an electronic device such as a semiconductor integrated circuit, and relates to a system therefor. On the basis of the result of comparison between defect information which is the result of inspection by an inspection tool and layout data stored in an auxiliary storage device, or on the basis of the result of reinspection by comparison between a defect and a wiring pattern as a background by an inspection processing operation unit, an object to be reviewed is selected using review conditions stored in the auxiliary storage device.

Abstract: Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

Abstract: The inventive method and apparatus for detecting defects of a microscopic circuit pattern by imaging the pattern at high resolution comprises an objective lens for imaging the subject pattern, a laser illumination means for illuminating the pupil of the objective lens, means of diminishing the coherency of the laser illumination, an accumulative detector, and means of processing the signal detected by the detector. The method and apparatus are capable of imaging the subject pattern at high sensitivity and high speed based on the illumination by a short wavelength, which is indispensable for the enhancement of resolution, particularly based on a laser light source which is advantageous for practicing, with a resulting image being the same or better in quality as compared with an image resulting from the ordinary discharge tube illumination, whereby it is possible to detect microscopic defects at high sensitivity.

Abstract: A pattern inspection technique using compared images is improved in that the amount of displacement between compared images can be detected precisely and with high speed, thereby making it possible to detect in high-speed and inspect particles with high sensitivity. To achieve this technique, each of an inspected image and a reference image is divided into a plurality of small regions, and the amount of displacement between the whole inspected image and the whole reference image is determined by using reliable information of displacement between the divided images of both images. In addition, the displacement-computed regions, the computation order and the image search range are previously scheduled.

Abstract: Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

Abstract: An apparatus and/or a method for inspecting fine defects on a substrate having minute patterns formed thereon as a target of inspection by detecting an image thereof with fine pixel size, wherein high speed processing is needed for position alignment over a wide region which is expanded equivalently therewith while obtaining a video processing circuit having a small size, wherein a video signal equal to or less than 0.2 &mgr;m in pixel size is obtained by using an optical system of DUV (far-ultraviolet) light or a video detection system of an electron beam. For instance, a search region for detecting position gaps is set at ±4 pixels, while on one substrate are mounted a plurality of video processing circuits, each being constructed with an LSI which can perform processing of k channels, thereby realizing a high-speed video processing portion having a small size.

Abstract: Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

Abstract: The present invention relates to a tool for analyzing by priority a defect having a high possibility of causing an electrical failure when inspecting a particle and a pattern defect in a piece of work which constitutes an electronic device such as a semiconductor integrated circuit, and relates to a system therefor. On the basis of the result of comparison between defect information which is the result of inspection by an inspection tool and layout data stored in an auxiliary storage device, or on the basis of the result of reinspection by comparison between a defect and a wiring pattern as a background by an inspection processing operation unit, an object to be reviewed is selected using review conditions stored in the auxiliary storage device.

Abstract: An apparatus for inspecting pattern defects on microscopic circuit patterns, with high resolution, comprises: an objective lens for detecting an image of a sample; UV laser beam illumination means for illuminating onto a pupil of the objective lens; a means for lowering coherency of the UV laser illumination; a detector of integration type; and a means for processing detected signal thereof.