Abstract: A capacitor includes: a capacitor element; a pair of external electrodes provided at opposite ends of the capacitor element; and a pair of metal caps and or a metal foil, the pair of metal caps each covering a corresponding one of the pair of external electrodes, the metal foil covering at least part of the capacitor element.

Abstract: A capacitor includes a capacitor element and a protection film. The capacitor element includes a first end-face electrode, a second end-face electrode, and an outer peripheral surface. The second end-face electrode exists on the opposite side of the first end-face electrode. The outer peripheral surface exists between the first end-face electrode and the second end-face electrode. The protection film includes a first protection portion, a second protection portion, and a third protection portion. The first protection portion protects the periphery of the first end-face electrode. The second protection portion protects the periphery of the second end-face electrode. The third protection portion is connected to the first and second protection portions and protects the outer peripheral surface.

Abstract: A component sensor detects a fluid component with improved accuracy. The component sensor includes tube (3) including tube side (4) that permits inflow of fluid (2), substrate (5) provided to tube (3), first protrusion (6) provided at one end of substrate (5), second protrusion (7) provided at another end of substrate (5), light emitter (9) that emits infrared light (8) toward first protrusion (6), and light receiver (10) that receives infrared light (8). Infrared light (8) entering substrate (5) through first protrusion (6) experiences total reflection inside substrate (5) and exits through second protrusion (7) to head for light receiver (10). Tube side (4) includes two through holes (13) that each extend between an interior and an exterior of tube (3).

Abstract: A capacitor includes: a capacitor element; a pair of external electrodes provided at opposite ends of the capacitor element; and a pair of metal caps and or a metal foil, the pair of metal caps each covering a corresponding one of the pair of external electrodes, the metal foil covering at least part of the capacitor element.

Abstract: The disclosure has a configuration including: a supporting substrate having a cavity; at least one bridge section extending directly above the cavity and having at least one end supported by the supporting substrate and an other end; and a thermopile wiring formed in the bridge section and including hot junctions in the bridge section and cold junctions directly above the supporting substrate, the hot junctions being connected to the cold junctions. The bridge section is provided with: at least one breakage detection wiring for detecting breakage of the bridge section; and at least one heater wiring. The breakage detection wiring is wired along the thermopile wiring. The heater wiring is wired such that part of the heater wiring is in an area between the other end of the bridge section and the hot junctions.

Abstract: A component sensor detects a fluid component with improved accuracy. The component sensor includes tube (3) including tube side (4) that permits inflow of fluid (2), substrate (5) provided to tube (3), first protrusion (6) provided at one end of substrate (5), second protrusion (7) provided at another end of substrate (5), light emitter (9) that emits infrared light (8) toward first protrusion (6), and light receiver (10) that receives infrared light (8). Infrared light (8) entering substrate (5) through first protrusion (6) experiences total reflection inside substrate (5) and exits through second protrusion (7) to head for light receiver (10). Tube side (4) includes two through holes (13) that each extend between an interior and an exterior of tube (3).

Abstract: The disclosure has a configuration including: a supporting substrate having a cavity; at least one bridge section extending directly above the cavity and having at least one end supported by the supporting substrate and an other end; and a thermopile wiring formed in the bridge section and including hot junctions in the bridge section and cold junctions directly above the supporting substrate, the hot junctions being connected to the cold junctions. The bridge section is provided with: at least one breakage detection wiring for detecting breakage of the bridge section; and at least one heater wiring. The breakage detection wiring is wired along the thermopile wiring. The heater wiring is wired such that part of the heater wiring is in an area between the other end of the bridge section and the hot junctions.

Abstract: Infrared sensor as an aspect of the present disclosure includes substrate, processor disposed on substrate, infrared sensing element disposed above processor, package that is disposed on substrate and covers infrared sensing element, and heat insulating section disposed between infrared sensing element and processor at an overlapped region of processor and infrared sensing element. Heat insulating section has a thermal conductivity smaller than substrate.

Abstract: An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Abstract: An infrared sensor includes an infrared detecting device, a lens, a member, a gap and a spacer. The lens is disposed above the infrared detecting device. The member forms an external surface and includes a first opening having a maximum internal diameter. The gap is disposed between the member and the lens. The spacer is disposed between the member and the lens so as to form the gap, and that is directly contact with lens. The spacer has a circular inner periphery, in planar view, which has a larger internal diameter than the maximum internal diameter of the first opening of the member.

Abstract: An infrared sensor includes an infrared detecting device, a lens, a member, a gap and a spacer. The lens is disposed above the infrared detecting device. The member forms an external surface and includes a first opening having a maximum internal diameter. The gap is disposed between the member and the lens. The spacer is disposed between the member and the lens so as to form the gap, and that is directly contact with lens. The spacer has a circular inner periphery, in planar view, which has a larger internal diameter than the maximum internal diameter of the first opening of the member.

Abstract: An infrared sensor includes: an infrared detecting device; a lens disposed above the infrared detecting device; an member that is disposed at a side of an upper surface of the lens and includes an opening; and a gap that intervenes between the member and the lens and has a wider range than the opening.

Abstract: An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Abstract: An infrared sensor includes: an infrared detecting device; a lens disposed above the infrared detecting device; an member that is disposed at a side of an upper surface of the lens and includes an opening; and a gap that intervenes between the member and the lens and has a wider range than the opening.

Abstract: A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.

Abstract: A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

Abstract: A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.

Abstract: A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.

Abstract: A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

Abstract: A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.