Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including an Al reflecting electrode layer, an ultrathin metal layer, and a transparent p-AlGaN contact layer that are sequentially arranged from a side opposite to a substrate, and a photonic crystal periodic structure provided in the range of the thickness direction of the transparent p-AlGaN contact layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: A semiconductor light emitting element with a design wavelength of ?, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength ? satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength ? becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: A sheet-shaped mold position detection device 183 for conveying and positioning a sheet-shaped mold M on which a fine transfer pattern M1 is formed. The sheet-shaped mold position dejection device 183 includes a sheet-shaped mold position detector 191 that detects a predetermined region of the sheet-shaped mold M by detecting transmittance of light in the sheet-shaped mold M.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: A transfer system 1 comprising: a conveying/positioning device 3 configured to convey and position a flat sheet-shaped mold MA in a predetermined direction, on which a fine transfer pattern M1 is formed; a transfer device 5 configured to transfer the fine transfer pattern M1 to a molding target W, the transfer device 5 being provided on an upstream side in the conveying direction of the sheet-shaped mold MA; and a peeling device 7 configured to peel off the sheet-shaped mold MA and the molding target from those mutually clinging to each other, after the transfer by the transfer device 5 is performed and the conveyance by the conveying/positioning device 3 is performed, the peeling device 7 being provided on a downstream side in the conveying direction of the sheet-shaped mold MA.

Abstract: A demolding device detaches a sheet-shaped mold from a molded product. The demolding device includes a molded product holder placed in a location different from a transfer device. The molded product holder is constructed and arranged to hold the molded product while being adhered to a first region of the mold. A detaching roller on which the mold is wound is movably provided above the molded product holder in an extending direction of the mold to roll up and detach the mold from the molded product.

Abstract: A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: A semiconductor light emitting element with a design wavelength of ?, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength ? satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength ? becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.

Abstract: A transfer device 5 transfers a fine transfer pattern M1 formed on a mold M to a molding target W. The transfer device includes: a base member 47 including a press body 31; a moving member 49 including a molding target placing body 33 that sandwiches and presses the mold M and the molding target W in cooperation with the press body 31, and is provided on the base member 47 so that the molding target placing body 33 can move; and a moving body supporting body 51 that includes a guide portion 71, and is engaged with and provided integrally on the base member 47 only in a region of the base member 47 elastically deformed very slightly by reaction force when the press is performed, the region being a region where a flexure angle becomes substantially “0”.

Abstract: A conveying/positioning device includes: a unused-mold placing device 9 that places a rolled mold MB of a sheet-shaped mold M thereon; a mold rolling-up device 11 that rolls up the flat sheet-shaped mold MA supplied from the unused-mold placing device 9; and a tension maintaining device that constantly maintains a tension of the flat sheet-shaped mold even if a form of the flat sheet-shaped mold is changed when the peeling is performed.

Abstract: A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the silicon-containing resist film with oxygen-containing plasma to form a silicon oxide film; dry-etching the organic resist film by using the silicon oxide film as an etching mask; dry-etching the n-type semiconductor layer by using the silicon oxide film and the organic resist film as an etching masks; and removing the silicon oxide film and the organic resist film.

Abstract: A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

Abstract: A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the silicon-containing resist film with oxygen-containing plasma to form a silicon oxide film; dry-etching the organic resist film by using the silicon oxide film as an etching mask; dry-etching the n-type semiconductor layer by using the silicon oxide film and the organic resist film as an etching masks; and removing the silicon oxide film and the organic resist film.

Abstract: A demolding device (7) transfers a fine transfer pattern formed on a sheet-shaped mold to a molded product, and then detaches the sheet-shaped mold, which adheres to the molded product, from the molded product. The demolding device (7) includes a molded product holder (19) placed in a location away from a transfer device (5) and configured to hold a molded product (W) out of a mold (MA) and the molded product (W) adhering to each other, and a detaching roller unit (23) on which the mold (MA) adhering to the molded product (W) held by the molded product holder (19) is wound, and which is configured to move relative to the molded product holder (19) and thereby to detach the mold (MA) from the molded product (W).

Abstract: A transfer device 5 transfers a fine transfer pattern M1 formed on a mold M to a molding target W. The transfer device includes: a base member 47 including a press body 31; a moving member 49 including a molding target placing body 33 that sandwiches and presses the mold M and the molding target W in cooperation with the press body 31, and is provided on the base member 47 so that the molding target placing body 33 can move; and a moving body supporting body 51 that includes a guide portion 71, and is engaged with and provided integrally on the base member 47 only in a region of the base member 47 elastically deformed very slightly by reaction force when the press is performed, the region being a region where a flexure angle becomes substantially “0”.

Abstract: A conveying/positioning device includes: a unused-mold placing device 9 that places a rolled mold MB of a sheet-shaped mold M thereon; a mold rolling-up device 11 that rolls up the flat sheet-shaped mold MA supplied from the unused-mold placing device 9; and a tension maintaining device that constantly maintains a tension of the flat sheet-shaped mold even if a form of the flat sheet-shaped mold is changed when the peeling is performed.