Abstract: Provided is a turbocharger, including: a separation wall surface, which is a wall surface of a bearing housing on a turbine impeller side, is positioned on an inner side with respect to an outer periphery of a back surface of the turbine impeller on the bearing housing side in a radial direction of a shaft, and is separated from the back surface in an axial direction of the shaft; and a heat-shielding plate, including: a main body portion (separation portion), which is separated from the separation wall surface in the axial direction, and is positioned between the back surface of the turbine impeller and the separation wall surface; and an insertion through hole (insertion portion), which receives a fastening member inserted thereinto in a direction of intersecting the axial direction of the shaft, the heat-shielding plate being mounted to the bearing housing by the fastening member.

Abstract: A quality control apparatus (20) includes: a regression analyzer (33) for calculating a regression formula on the basis of measurement values acquired from an upstream step and comparative measurement values acquired from a downstream step; a margin determination unit (34) for calculating a prediction value by substituting a determination reference value defining a determination reference range in the upstream step for an explanatory variable of the regression formula, comparing the prediction value with a comparative determination reference range in a downstream step, and determining whether the measurement values are accepted; and a reference value calculator (35) for calculating a new determination reference value to replace the determination reference value in accordance with the determination result.

Abstract: A bottom surface of a housing recess of a turbine housing includes a close attachment portion in a continuous annular land shape, which is located radially outside a fitting recess. The close attachment portion is closely attached to a portion radially outside first support holes in a surface of a shroud ring opposite from its facing surface, by a fastening force of attachment bolts. The first support holes in the shroud ring communicate with an outlet side of a turbine impeller through a connection path and a cutout.

Abstract: Three or more attachment pins are arranged on a right lateral surface of a nozzle ring at intervals. All the attachment pins are placed outside support holes in the nozzle ring in radial directions of the nozzle ring. A guide ring is provided across right lateral surfaces of the attachment pins. A first side guide member to support a right lateral surface of a drive ring in away that allows the right lateral surface to be in sliding contact therewith is provided to the right of the guide ring. A second side guide member to support a left lateral surface of the drive ring in a way that allows the left lateral surface to be in sliding contact therewith is provided to the left of the guide ring.

Abstract: The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.

Abstract: A variable geometry system turbocharger includes an annular heat shield plate which shields heat from a turbine wheel side. The heat shield plate is integrally provided at a central part of a side surface of a bearing housing opposed to a back surface of a turbine disk. A first seal ring is provided between an inner peripheral surface of a first nozzle ring and an outer peripheral surface of the heat shield plate. A second seal ring is provided between an inner peripheral surface of a second nozzle ring and an outer peripheral surface of a protrusion of a turbine housing.

Abstract: A second nozzle shaft of each variable nozzle has an outer diameter smaller than that of a first nozzle shaft. The first nozzle shaft is integrally formed on one side surface of each variable nozzle. A portion is provided on the other side surface of each variable nozzle. The portion encloses the second nozzle shaft, and can contact a second nozzle ring. An inner nozzle flange and an outer nozzle flange which can contact a first nozzle ring are integrally formed on baes sides of the first nozzle shaft on a blade surface and a blade surface of each variable nozzle, respectively.

Abstract: The invention provides a composition for forming a metal oxide-containing film comprising, as a component (A), a metal oxide-containing compound A1 obtained by hydrolysis and/or condensation of one or more kinds of hydrolysable metal compounds shown by the following general formula (A-1), as a component (B), an aromatic compound shown by the following general formula (B-1), the compound generating a hydroxyl group by thermal and/or an acid. There can be provided a composition for a resist lower layer film, which has high etching selectivity, capable of subjecting to stripping under mild conditions than the conventional process, has excellent pattern adhesiveness, and fine pattern formation can be performed.

Abstract: The invention provides a composition for forming a titanium-containing resist underlayer film comprising: as a component (A), compounds selected from titanium compounds represented by the following general formulae (A-1) and (A-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, as a component (B), compounds selected from titanium compounds represented by the following general formulae (B-1) and (B-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, and as a component (D), solvent. There can be provided a composition for forming a titanium-containing resist underlayer film to form a resist underlayer film having favorable pattern adhesiveness and excellent etching selectivity.

Abstract: The invention provides a composition for forming a titanium-containing underlayer film comprising: as a component (A), a titanium-containing compound obtained by reacting a divalent or a trivalent alcohol represented by the following general formula (A-2) to one or more kinds of compounds selected from a titanium compound represented by the following general formula (A-1) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compound and as a component (C), solvent. There can be provided a composition for forming a titanium-containing underlayer film that is excellent in storage stability without changes in characteristics, pattern adhesiveness relative to a fine pattern, and etching selectivity relative to conventional organic film and silicon-containing film.

Abstract: The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C). The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound.

Abstract: The present invention provides a silicon-containing surface modifier containing one or more repeating units each represented by the following general formula (A), or one or more partial structures each represented by the following general formula (C): It is aimed at providing a resist lower layer film which is usable for a resist pattern formed of a hydrophilic organic compound to be obtained in a negative development.

Abstract: A bottom surface of a housing recess of a turbine housing includes a close attachment portion in a continuous annular land shape, which is located radially outside a fitting recess. The close attachment portion is closely attached to a portion radially outside first support holes in a surface of a shroud ring opposite from its facing surface, by a fastening force of attachment bolts. The first support holes in the shroud ring communicate with an outlet side of a turbine impeller through a connection path and a cutout.

Abstract: The invention provides a patterning process comprises the steps of: (1) forming a positive chemically amplifying type photoresist film on a substrate to be processed followed by photo-exposure and development thereof by using an organic solvent to obtain a negatively developed pattern, (2) forming a silicon-containing film by applying a silicon-containing film composition comprising a solvent and a silicon-containing compound capable of becoming insoluble in a solvent by a heat, an acid, or both, (3) insolubilizing in a solvent the silicon-containing film in the vicinity of surface of the negatively developed pattern, (4) removing the non-insolubilized part of the silicon-containing film to obtain an insolubilized part as a silicon-containing film pattern, (5) etching the upper part of the silicon-containing film pattern thereby exposing the negatively developed pattern, (6) removing the negatively developed pattern, and (7) transferring the silicon-containing film pattern to the substrate to be processed.

Abstract: Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides.

Abstract: The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4).

Abstract: The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

Abstract: The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process.

Abstract: A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3).

Abstract: The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.