Abstract: A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.

Abstract: A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temrperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.

Abstract: The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than that of the n-type dopant during forming a single-crystal of the zinc oxide through a thin film forming process. Further, an element of the second group is co-doped to allow oxygen to be stabilized.

Abstract: A first epitaxial layer group to emit a yellow color light is provided on a substrate via a first buffer layer. Then, a second epitaxial layer group to emit a blue color light is provided on the first epitaxial layer group via a second buffer layer. The first and the second epitaxial layer group are made of II-VI semiconductor compounds, respectively.

Abstract: A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The device 2 includes a contact layer 5 composed of p-BeTe and a cap layer 4 is composed of p-ZnSe. The cap layer 4 is positioned on the contact layer 5 and an electrode 3 sits atop the cap layer. Preferably, the thickness of the cap layer is 30 to 70 Å and the electrode is composed of gold or gold is dispersed in the cap layer.

Abstract: A ZnO crystal growing method having the steps of: growing a low temperature growth ZnO layer on a sapphire substrate at a temperature lower than a single crystal ZnO growth temperature; thermally processing the low temperature growth ZnO layer at a temperature near to a growth temperature of a high temperature growth single crystal ZnO layer higher than the growth temperature low temperature growth ZnO layer; and growing a high temperature growth single crystal ZnO layer on the low temperature growth ZnO layer at a temperature higher than the growth temperature of the of the low temperature growth ZnO layer. ZnO crystal of good quality with a reduced number of crystal defects can be grown on a sapphire substrate.

Abstract: A first epitaxial layer group to emit a yellow color light is provided on a substrate via a first buffer layer. Then, a second epitaxial layer group to emit a blue color light is provided on the first epitaxial layer group via a second buffer layer. The first and the second epitaxial layer group are made of II-VI semiconductor compounds, respectively.

Abstract: A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, and the ZnTe layer being doped with p-type impurities N to a predetermined impurity concentration or higher.