Abstract: The present invention provides a method of producing a bonded body of a beryllium member and a copper or copper alloy member, in which the bonding strength and thermal cycle resistance property are further increased. When the beryllium member and the copper or copper alloy member are bonded to each other, a thin layer of titanium, chromium, molybdenum, or silicon is formed as a diffusion inhibition layer on the surface of the beryllium; a copper layer is formed as a bonding layer on the surface of the diffusion inhibition layer; a thin layer of aluminum or zinc is formed as a bonding promotion layer on the surface of the bonding layer; and the beryllium member and the copper or copper alloy member are diffusion bonded to each other with the intermediate layer formation side being the bonding surface.

Abstract: A first epitaxial layer group to emit a yellow color light is provided on a substrate via a first buffer layer. Then, a second epitaxial layer group to emit a blue color light is provided on the first epitaxial layer group via a second buffer layer. The first and the second epitaxial layer group are made of II-VI semiconductor compounds, respectively.

Abstract: The present invention provides a method of producing a bonded body of a beryllium member and a copper or copper alloy member, in which the bonding strength and thermal cycle resistance property are further increased. When the beryllium member and the copper or copper alloy member are bonded to each other, a thin layer of titanium, chromium, molybdenum, or silicon is formed as a diffusion inhibition layer on the surface of the beryllium; a copper layer is formed as a bonding layer on the surface of the diffusion inhibition layer; a thin layer of aluminum or zinc is formed as a bonding promotion layer on the surface of the bonding layer; and the beryllium member and the copper or copper alloy member are diffusion bonded to each other with the intermediate layer formation side being the bonding surface.

Abstract: A first epitaxial layer group to emit a yellow color light is provided on a substrate via a first buffer layer. Then, a second epitaxial layer group to emit a blue color light is provided on the first epitaxial layer group via a second buffer layer. The first and the second epitaxial layer group are made of II-VI semiconductor compounds, respectively.

Abstract: A HIP-bonded body of a beryllium member and copper alloy member. Before subjecting the members to HIP processing, a diffusion inhibiting layer is deposited on the outer surface of the copper alloy member. A bond promoting layer of aluminum or aluminum alloy is then formed on the diffusion inhibiting layer. During the HIP bonding step, an insert composed of an aluminum-magnesium alloy is juxtaposed between the outer aluminum layer of the pre-treated copper alloy member and the beryllium member.

Abstract: According to the present invention, an insert material is laid between metal beryllium and copper alloy, wherein the insert material has the minimum, solidus temperature of not lower than 870° C. to the metal beryllium and copper alloy, respectively, and a single diffusion bonding process is performed under the condition that the temperature is not lower than 850° C. and less than the minimum solidus temperature, and the pressure is 20 to 30O MPa, so that the metal beryllium, copper alloy and stainless steel can be effectively bonded without deterioration of corrosion resistance for sensitizing of the stainless steel.

Abstract: A HIP-bonded body of a beryllium member and a copper alloy member. The beryllium member comprises on its one side a thin layer of titanium, chromium, molybdenum or silicon as a diffusion inhibition layer. The beryllium member is HIP-bonded to the copper alloy member, with the diffusion inhibition layer situated between the two members. A layer of pure copper or pure nickel may be formed on the diffusion inhibition layer, as a bonding promotion layer. An aluminum layer may be formed on the surface of the beryllium member, as a stress relaxation layer on which the diffusion inhibition layer is formed. The bonded body has excellent bonding strength and thermal cycle resistance property, and can be obtained in economical manner.

Abstract: A process for producing the beryllium-copper alloy comprises the steps of casing a beryllium-copper alloy composed essentially of 1.00 to 2.00% by weight of Be, 0.18 to 0.35% by weight of Co, and the balance being Cu, rolling the cast beryllium-copper alloy, annealing the alloy at 500.degree. to 800.degree. C. for 2 to 10 hours, then cold rolling the annealed alloy at a reduction rate of not less than 40%, annealing the cold rolled alloy again at 500.degree. to 800.degree. C. for 2 to 10 hours, thereafter cold rolling the alloy to a desired thickness, and subjecting the annealed alloy to a final solid solution treatment. The beryllium-copper alloy obtained by this producing process is also disclosed, in which an average grain size is not more than 20 .mu.m, and a natural logarithm of a coefficient of variation of the grain size is not more than 0.25.

Abstract: A method of hot forming beryllium-copper alloy including from 1.60 to 2.00% by weight of Be, from 0.2 to 0.35% by weight of Co and the balance being essentially Cu, under specified conditions of a working temperature, a working rate, and an amount of work strain to produce a hot formed product of an equiaxed grain structure having a uniform stable grain size.

Abstract: A beryllium copper alloy member is provided having both a high electrical conductivity of not less than 70% IACS and a high strength of not less than 70 kgf/mm.sup.2 by an extensively simplified production method which widely decreases the production cost of the alloy member. The method includes, shaping a cast ingot alloy consisting in weight basis of 0.15-0.6% of Be, 0.6-3.0% of Ni, and the test of Cu and unavoidable impurities to a desired shape by working it to destroy the cast organization structure of the alloy, heat annealing the shaped alloy at a condition of 400.degree.-650.degree. C..times.1-100 hrs, and cold working the heat annealed alloy to a final shape by a working rate of at least 80%.

Abstract: An electrically conductive material including 0.15% to 0.35% of Be, 0.3% to 1.5% of Al, either one or both of Ni and Co in a total amount of 1.6% to 3.5%, in terms of weight, and the balance being Cu with inevitable impurities. The alloy may further contain at least one of Si, Sn, Zn, Fe, Mg and Ti in a total amount of 0.05% to 1.0%, in terms of weight ratio. Each of the Si, Sn, Zn, Fe, Mg and Ti is in an amount of 0.05% to 0.35%.

Abstract: A process for producing beryllium-copper alloys is disclosed, which comprises the steps of obtaining a cast ingot by melting an alloy essentially consisting of from 0.05 to 2.0% by weight of Be, form 0.1 to 10.0% by weight of at least one kind of Co and Ni, and the balance being substantially Cu, subjecting the thus obtained cast ingot to a solution treatment at a temperature range from 800.degree. to 1,000.degree. C., cold working, annealing at a temperature range from 750.degree. to 950.degree. C. being lower than the solution treating temperature, and then an age hardening treatment. The alloy may further contain from 0.05 to 4.0% by weight of at least one kind of Si, Al, Mg, Zr, Sn, and Cr in a total amount. By this producing process, the beryllium-copper alloys having higher strength and formability can be otained due to uniform and fine dispersion of solid-unsolved precipitate.

Abstract: An excellent material for lead frames is provided which is economical and easily punched out to produce lead frames without bending or breakage, and has both superior tensile strength and high electrical conductivity, as well as splendid heat dissipation properties and good soldering properties.

Abstract: A low cost electroconductive spring material excellent in electroconductivity and spring performance, has from 1.8 to 3.0% by weight of Ni, from 0.15 to 0.35% by weight of Be, from 0.2 to 1.2% by weight of Si and the balance being copper. This low cost electroconductive spring material can be used in electric devices. As preferred embodiments, the electroconductive spring material may further contain from 0.05 to 3.0% by weight in a total amount of at least one component selected from Sn, Al and Zn provided that each of Sn, Al and Zn does not exceed 1.5% by weight, or from 0.01 to 1.5% by weight in a total amount of at least one component selected from Co, Fe, Zr, Ti and Mg, provided that each of Co, Fe, Zr, Ti and Mg does not exceed 1.0% by weight. Moreover, the electroconductive spring material is subjected to a final solidification heat treatment at a temperature of 880.degree.-950.degree. C., a cold processing of not greater than 80%, and an aging treatment at a temperature of 380.degree.-530.degree. C.