Abstract: A plurality of pixel electrodes disposed in a matrix are electrically connected with a plurality of first thin film transistors, respectively. Coloring layers in a plurality of colors overlap, in a plan view, with two or more pixel electrodes adjacent to each other in one direction among the plurality of pixel electrodes. Channel layers of the first thin film transistors are covered from above by a coloring laminated body including end parts of the respective coloring layers in at least two colors among the coloring layers in a plurality of colors, the end parts overlapping with each other in the plan view.

Abstract: It is an object to provide a technique capable of suppressing a damage on a semiconductor channel layer due to a process of forming a source electrode and a drain electrode and also suppressing a short channel effect. A thin film transistor includes a gate electrode, a first insulating film, a source electrode, a drain electrode, a second insulating film, and a semiconductor channel layer that includes an oxide semiconductor. The second insulating film is disposed on the first insulating film, the source electrode, and the drain electrode. The semiconductor channel layer is electrically connected to the source electrode and the drain electrode via a first contact hole and a second contact hole provided in the second insulating film.

Abstract: A plurality of pixel electrodes disposed in a matrix are electrically connected with a plurality of first thin film transistors, respectively. Coloring layers in a plurality of colors overlap, in a plan view, with two or more pixel electrodes adjacent to each other in one direction among the plurality of pixel electrodes. Channel layers of the first thin film transistors are covered from above by a coloring laminated body including end parts of the respective coloring layers in at least two colors among the coloring layers in a plurality of colors, the end parts overlapping with each other in the plan view.

Abstract: It is an object to provide a technique capable of suppressing a damage on a semiconductor channel layer due to a process of forming a source electrode and a drain electrode and also suppressing a short channel effect. A thin film transistor includes a gate electrode, a first insulating film, a source electrode, a drain electrode, a second insulating film, and a semiconductor channel layer that includes an oxide semiconductor. The second insulating film is disposed on the first insulating film, the source electrode, and the drain electrode. The semiconductor channel layer is electrically connected to the source electrode and the drain electrode via a first contact hole and a second contact hole provided in the second insulating film.

Abstract: A thin film transistor substrate includes a semiconductor channel layer made of an oxide semiconductor, protective insulating layers that cover the semiconductor channel layer, a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode. The second source electrode is located on the first source electrode and connected with the semiconductor channel layer through a first contact hole. The second drain electrode is located on the first drain electrode and connected with the semiconductor channel layer through a second contact hole.

Abstract: A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electrode and a first drain electrode selectively provided on the second insulating film, a second source electrode and a second drain electrode provided on the first source electrode and the first drain electrode, respectively, a third insulating film that covers the second source electrode and the second drain electrode; a third source electrode connected to the semiconductor channel layer via a first contact hole provided through the third insulating film, the second and the first source electrode; a third drain electrode connected to the semiconductor channel layer via a second contact hole provided through the third insulating film, the second drain electrode, and the first drain electrode.

Abstract: A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electrode and a first drain electrode selectively provided on the second insulating film, a second source electrode and a second drain electrode provided on the first source electrode and the first drain electrode, respectively, a third insulating film that covers the second source electrode and the second drain electrode; a third source electrode connected to the semiconductor channel layer via a first contact hole provided through the third insulating film, the second and the first source electrode; a third drain electrode connected to the semiconductor channel layer via a second contact hole provided through the third insulating film, the second drain electrode, and the first drain electrode.

Abstract: A thin film transistor substrate includes a semiconductor channel layer made of an oxide semiconductor, protective insulating layers that cover the semiconductor channel layer, a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode. The second source electrode is located on the first source electrode and connected with the semiconductor channel layer through a first contact hole. The second drain electrode is located on the first drain electrode and connected with the semiconductor channel layer through a second contact hole.

Abstract: A thin film transistor substrate includes a semiconductor channel layer made of an oxide semiconductor, protective insulating layers that cover the semiconductor channel layer, a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode. The second source electrode is located on the first source electrode and connected with the semiconductor channel layer through a first contact hole. The second drain electrode is located on the first drain electrode and connected with the semiconductor channel layer through a second contact hole.

Abstract: A thin film transistor substrate includes a semiconductor channel layer made of an oxide semiconductor, protective insulating layers that cover the semiconductor channel layer, a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode. The second source electrode is located on the first source electrode and connected with the semiconductor channel layer through a first contact hole. The second drain electrode is located on the first drain electrode and connected with the semiconductor channel layer through a second contact hole.