Abstract: A memory other than a non-volatile memory in a numerical controller is divided into a plurality of memory areas in response to a command from a computer connected to the numerical controller. Whether a machining program has been stored in each of the divided memory areas is decided before a machining program stored on a hard disk in the computer is transferred to the memory other than the non-volatile memory. The machining program stored on the hard disk is then written to an area for which it is determined that no machining program is stored.

Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.

Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.

Abstract: A heat recovery apparatus, for an absorption apparatus for removing CO2 in combustion exhaust gas emitted from a thermal power plant 112 and for regeneration apparatuses 104 to 107 for regenerating CO2 in an absorbing liquid from the absorption apparatus, includes a regeneration-apparatus-exit-CO2-gas cooling apparatus 100 for cooling CO2 gas from an exhaust port of the regeneration apparatus, and may further include a circulation line 102 for circulating reflux water among boiler feedwater heaters 114 and 116 in the thermal power plant 112 and the regeneration-apparatus-exit-CO2-gas cooling apparatus 100.

Abstract: A storage catalyst 3 is constituted of a supporter substrate 30, which is formed of at least one member being selected from the group consisting of Al2O3, CeO2, ZrO2, TiO2 and zeolite, and whose specific surface area is 30 m2/g or more, and a coating layer 31, which includes a supporting powder including at least one member being selected from the group consisting of Al2O3, CeO2, ZrO2, TiO2 and zeolite, a storage material for storing NOx and SOx, the storage material being supported on the supporting powder, and a noble metal being supported on the supporting powder. Since the supporter substrate 30 has a large specific surface area, a supporting amount of the storage material for storing NOx and SOx augments remarkably. Therefore, an SOx storage amount of the storage catalyst, which is put in place on an upstream side of an NOx storage-and-reduction catalyst, augments, and thereby an NOx storage amount in low-temperature regions augments.

Abstract: In a numerical controller that controls axes based on tabular data, the tabular data is created to be used for operating one arbitrary axis without axis assignment and shared by a plurality of axes assigned based on an NC program, signals, etc.

Abstract: A photoirradiation apparatus includes an optical modulation element which phase-modulates light, an illumination system to illuminate the optical modulation element, and an imaging optical system which applies the phase-modulated light to a non-single-crystal semiconductor film to form a predetermined light intensity distribution with a strip-like repetitive region having long sides adjacent to each other. The light intensity distribution has a distribution which is downwards convex along a center line in a short side direction and a center line in a long side direction of the repetitive region. The light intensity distribution includes isointensity lines each bent to form a projection from a center of the repetitive region outward in the long side direction. A radius of curvature of an end of at least one isointensity line is not more than 0.3 ?m. A pitch of the repetitive region in the short side direction is not more than 2 ?m.

Abstract: Step data are sequentially read out from a conversational program created in a conversational format. The processor 13 determines whether or not leaning control in the step is possible. When the leaning control is possible, a learning start command is added to the start of the program to create and output an NC program in the step. Also a learning end command is added to the end of the NC program in the step. Conversion into the NC program is performed for each of steps. When a learning control automatic ON/OFF operation is selected to all the steps, a learning control start command and a learning control end command are added to the start and the end of the converted NC program when learning control of all the steps can be performed.

Abstract: A path table operation is performed while updating the reference positions. When a read-out command in the path cycle table is read out, the reference positions are withdrawn and reset, and the respective axial positions at the time of the initiation of the path cycle command are stored. From the next period, the target positions are determined by adding the positions at the time of initiation to the respective axial positions corresponding to the reference positions stored in the path cycle table, and a path table operation is performed. A single path cycle table is sufficient for storing commands for portions to be repeatedly worked.

Abstract: A numerical controller capable of performing path-table operations in a plurality of systems individually or synchronously, such that during a path-table operation in one system, a path-table operation or an operation according to NC statements can be selectively performed in another system. The plurality of systems are provided with their respective reference variables. It is selected whether the reference variable is set common or specific to each of the plurality of systems. During a path-table operation in one system, it is possible to command a path-table operation in another system to start a path-table operation thereof or to perform waiting of path-table operations in the plurality of systems. If the reference variable is set in common for all systems, path-table operations can be performed synchronously, and if the reference variable is set specific to each of the plurality of systems, path-table operations can be performed individually.

Abstract: A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 ?m square or more, and at least one needle crystal portion having a grain length of 3.5 ?m or more.

Abstract: During path table operation, date and time information at sampling, the value of the reference signal, the position of an axis controlled in synchronization with the reference signal, and information on the state of the numerical controller are stored, for each predetermined sampling cycle, in buffer as operating history information. The operating history information stored in buffer is then transferred in operating history saving memory when an alarm is generated, and then displayed on a display device. By displaying operating history in this way, the location of the data instructed in path table operation, the state of the numerical controller and the position of the control axis when an alarm is generated can be specified.

Abstract: A numerical controller capable of operating an auxiliary function at a target time or spindle position in performing operation based on table format data. An auxiliary function table is stored with auxiliary function commands M to be outputted corresponding to commanded reference times Lc and their corresponding operation delay times D. A reference time L is updated based in accordance with an override value. An auxiliary function command M and its corresponding operation delay time D are read from the auxiliary function table. The delay time D is corrected with the override value, and a reference time prior to a commanded reference time Lc by a margin equivalent to the corrected delay time is set as a command time Lr. If an override is entered, the delay time is corrected for the override amount and modified into an overridden reference time unit, and a command time for an auxiliary function is obtained and outputted based on the reference time unit.

Abstract: A numerical controller capable of avoiding a shock to a machine by a controlled axis when a command of an alarm, a reset or a feed hold is issued in a path table operation. The numerical controller performs the path table operation where position of a controlled axis of a machine is controlled in synchronism with an input value of a reference variable indicative of time, a position of an axis or a position of a spindle according to a data table that stores command positions of the controlled axis respective for set values of the reference variable. The numerical controller comprises deceleration/stop command receiving means that receives a command to decelerate and stop the controlled axis in the path table operation; and decelerating means that gradually reduces a rate of increase of the reference variable to zero so that the controlled axis is decelerated and stopped in response to the deceleration/stop command.

Abstract: A numerical controller capable of using G-code commands pursuant to ISO in a path table operation. Data of values L of a reference variable and positions of a controlled axis X on i th and (i+1) th lines are read from a path table and stored. Based on the i th and (i+1) th line data and an inputted value Lm of the reference variable, a motion path is obtained to output motion amounts of the controlled axis. Thereafter, an index i is updated, and the path table operation is performed in accordance with data in the path table and the inputted reference variable value. If a G-code is included in the read data during the path table operation, it is stored. When the reference variable value Lm reaches a reference variable value designated by a line in which the G-code is read, a command for the G-code is executed.

Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.

Abstract: A spindle is subjected to speed control and contour control according to a path table in which the speed and the position of the spindle are stored in association with a time. A switchover command for starting a contour control during speed control and a time La at which the switchover is carried out are set in advance in the path table. When the time La is reached, a spindle speed Sa and a spindle position Xa corresponding to the time La are read. Then, a time Lb and a spindle position Xb for the start of the contour control, designated next, are read. A speed is obtained from the spindle speed Sa and a speed in a first path in the contour control so that the spindle position shifts from Xa to Xb in a period between the times La and Lb. The spindle is moved from the time La to the time Lb at the obtained speed according to a designated linear function.

Abstract: A numerical control apparatus having tool cutting edge detecting unit for detecting a cutting edge position of a tool mounted on a tool rest, comprises detection signal determining unit for determining, as effective, only a detection signal that is first inputted from among a plurality of detection signals which are continuously inputted from the tool cutting edge detecting unit. A signal which is detected until a preset time is elapsed after a first signal is received when the tool comes into contact with the touch sensor, and/or until the tool moves a predetermined distance, is determined as erroneous detection by the detection signal determining unit, and the signal is disenabled.

Abstract: There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

Abstract: There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.