Abstract: A calibrating apparatus of a tire testing machine of the present invention calibrates force components along a lateral direction of a load cell on a tire testing machine provided with a rotary drum and the load cell mounted to a shaft portion of the rotary drum and capable of measuring force applied to the rotary drum, and has a hook member hooked on an outer peripheral edge of the rotary drum, a linear body, one end side of which is connected to the hook member, a load applying member connected to the other end side of the linear body and capable of generating a reference load toward a downward direction, and a pulley device around which the linear body is wound to convert the downward force by the load applying member into an upward force on one end side of the linear body.

Abstract: A calibrating apparatus of a tire testing machine of the present invention calibrates force components along a lateral direction of a load cell on a tire testing machine provided with a rotary drum and the load cell mounted to a shaft portion of the rotary drum and capable of measuring force applied to the rotary drum, and has a hook member hooked on an outer peripheral edge of the rotary drum, a linear body, one end side of which is connected to the hook member, a load applying member connected to the other end side of the linear body and capable of generating a reference load toward a downward direction, and a pulley device around which the linear body is wound to convert the downward force by the load applying member into an upward force on one end side of the linear body.

Abstract: An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.

Abstract: A high-pressure processing apparatus for supplying a pressure medium into a high-pressure processing chamber 4, which is formed in a pressure vessel 1 to treat a workpiece at a high pressure, is provided. The pressure vessel 1 includes a first vessel section 2 and a second vessel section 3, which can be separated from each other in the axial direction, wherein the high-pressure processing chamber 4 is formed between the first and second vessel sections 2 and 3. Furthermore, a face seal section 5 for tightly sealing the high-pressure processing chamber 4 is formed in the abutment of the first and second vessel sections 2 and 3. A press apparatus 7 for providing an axial force to the face seal section 5 is disposed and the press apparatus 7 has a space 15 for storing a supplementary apparatus, such as a stirrer or the like at a position corresponding to the axial center of the pressure vessel 1.

Abstract: An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.

Abstract: The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

Abstract: A high-pressure processing apparatus for supplying a pressure medium into a high-pressure processing chamber 4, which is formed in a pressure vessel 1 to treat a workpiece at a high pressure, is provided. The pressure vessel 1 includes a first vessel section 2 and a second vessel section 3, which can be separated from each other in the axial direction, wherein the high-pressure processing chamber 4 is formed between the first and second vessel sections 2 and 3. Furthermore, a face seal section 5 for tightly sealing the high-pressure processing chamber 4 is formed in the abutment of the first and second vessel sections 2 and 3. A press apparatus 7 for providing an axial force to the face seal section 5 is disposed and the press apparatus 7 has a space 15 for storing a supplementary apparatus, such as a stirrer or the like at a position corresponding to the axial center of the pressure vessel 1.

Abstract: A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.

Abstract: A processing fluid is not only supplied toward a surface side of a substrate (W) from supply nozzles (13, 13), but also flow directions (R1, R1) of the processing fluid supplied from the respective supply nozzles 13 deviate from each other within the surface of the substrate (W). Therefore, a whirling flow (TF) of the processing fluid is formed over the surface of the substrate (W) and the processing fluid comes into contact with the surface of the substrate (W), thereby performing a predetermined surface treatment (e.g. cleaning, first rinsing, second rinsing and drying).

Abstract: An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.

Abstract: A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.

Abstract: The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

Abstract: To provide a high-temperature and high-pressure treatment device in which articles to be treated such as wafers of LSI semiconductors can be transported in a stable attitude, and the entire apparatus is made compact.

Abstract: An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.

Abstract: This invention provides a method of forming a metal wiring film excellent in EM resistance and low electric resistance. In a method of forming a wiring structure by filming and covering the surface of the insulating film of a substrate to be treated having a hole or groove formed thereon with a metallic material such as copper, aluminum, silver or the like, thereby filling the hole or groove inner part with the metallic material to form a wiring structure, the substrate to be treated is exposed to a high temperature under a high-pressure gas atmosphere after the continuous filming and covering with the metallic material along the inner surface profile of the hole or groove, whereby the surface diffusion phenomenon of the metallic material is promoted to reform the metal film into a film structure as the surface area of the metal film is minimized.

Abstract: The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for holding a load acting in the axial direction of the high-pressure vessel in processing a workpiece to be processed in the high-pressure vessel, an actuator for moving the vessel component members of the high-pressure vessel in the axial direction thereof so as to load and unload the workpiece, a sealing unit fitted to a portion for loading and unloading the workpiece, which is formed when the vessel component members are moved in the axial direction of the vessel, and a retractable cotter unit for transmitting a load acting in the axial direction of the high-pressure vessel to the frame.

Abstract: The present invention provides a system for supplying a high-pressure medium gas suitable for processing a semiconductor to be processed by heating under isostatic pressure in a short cycle.The system includes a gas holder containing a high-pressure medium gas, a compressor for pressurizing the high-pressure medium gas supplied from the gas holder, a high-pressure vessel having a heater, an accumulator for storing the high-pressure medium gas pressurized by the compressor, a first evacuation unit for evacuating the inside of a pipeline for the high-pressure medium gas, a vacuum casing for holding the opening of the high-pressure vessel in a vacuum, a second evacuation unit for evacuating the inside of the vacuum casing, and a valve unit for connecting the high-pressure vessel and the accumulator so that series connection and parallel connection can be switched on the outlet side of the compressor.

Abstract: A cooling system for the hot isostatic pressurizing equipment which is provided with valves and actuators at the lower part of the equipment so that they are not subject to thermal deformation. The valves and actuators are installed independently from each other so as to eliminate a need for increasing the diameter of the vessel.The valve is attached to a lower vent hole formed in the radial direction in the supporting cylinder installed on the inner bottom closure. The valve is energized in its closing direction by a spring and is operated by the actuator installed on the outer bottom closure detachable from the inner bottom closure.

Abstract: An impregnating carbonizing process and apparatus which permit reduction in cost of consumable goods and can operate at a reduced cost and a heating and vacuum impregnating operation which requires a very long period of time can be performed on the outside of an expensive high pressure vessel to accomplish rapid carbonization and baking.

Abstract: An impregnating carbonizing process and apparatus which permit reduction in cost of consumable goods and can operate at a reduced cost and a heating and vacuum impregnating operation which requires a very long period of time can be performed on the outside of an expensive high pressure vessel to accomplish rapid carbonization and baking.