Abstract: When performing dephosphorization treatment of hot metal by adding a refining agent as a lime source and an oxygen source (dephosphorizing agent(s) and a gaseous oxygen source into the hot metal accommodated in a hot metal holding container, the refining agent used is a refining agent having an Ig-loss value of from 4.0% by mass to 35.0% by mass and including 60% by mass or more of quicklime.

Abstract: When performing dephosphorization treatment of hot metal by adding a refining agent as a lime source and an oxygen source (dephosphorizing agent(s) and a gaseous oxygen source into the hot metal accommodated in a hot metal holding container, the refining agent used is a refining agent having an Ig-loss value of from 4.0% by mass to 35.0% by mass and including 60% by mass or more of quicklime.

Abstract: A molten steel refining method includes throwing a powder to molten steel while heating the powder with a flame formed by combustion of a hydrocarbon gas at the leading end of a top blowing lance. The lance height of the top blowing lance (the distance between the static bath surface of the molten steel and the leading end of the lance) is controlled to 1.0 to 7.0 m, and the dynamic pressure P of a jet flow ejected from the top blowing lance calculated from equation (1) below is controlled to 20.0 kPa or more and 100.0 kPa or less. P=?g× U2/2 . . . (1) wherein P is the dynamic pressure (kPa) of the jet flow at an exit of the top blowing lance, ?g the density (kg/Nm3) of the jet flow, and U the velocity (m/sec) of the jet flow at the exit of the top blowing lance.

Abstract: A molten steel refining method includes throwing a powder to molten steel while heating the powder with a flame formed by combustion of a hydrocarbon gas at the leading end of a top blowing lance. The lance height of the top blowing lance (the distance between the static bath surface of the molten steel and the leading end of the lance) is controlled to 1.0 to 7.0 m, and the dynamic pressure P of a jet flow ejected from the top blowing lance calculated from equation (1) below is controlled to 20.0 kPa or more and 100.0 kPa or less. P=?g× U2/2 . . . (1) wherein P is the dynamic pressure (kPa) of the jet flow at an exit of the top blowing lance, ?g the density (kg/Nm3) of the jet flow, and U the velocity (m/sec) of the jet flow at the exit of the top blowing lance.

Abstract: A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.

Abstract: Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length.

Abstract: An OTFT is formed by forming a pair of recesses, one being a groove and another being groove or a hole. A source electrode is formed by filling one of the recesses. A drain electrode is formed by filling the other one of the recesses. A film of organic semiconductor material is formed on the source electrode and the drain electrode and makes electrical contact therewith. A gate insulating film is formed on the film of organic material, and a gate electrode is formed on the gate insulating film. The method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode and the drain electrode formed on the substrate such as a plastic substrate by an inexpensive process.

Abstract: A thin film field effect transistor is disclosed that includes a gate electrode, a gate insulator film the on gate electrode, and a first organic electronic material film containing a first organic electronic material on the gate insulator film. A source electrode and a drain electrode are spaced apart from each other on the first organic electronic material film. The first organic electronic material film includes a portion between the source electrode and the drain electrode that is in contact with the gate insulator film. This portion provides a current path. The current is controlled by the potential of the gate electrode. There is a second organic electronic material film that is in contact with the surface of first organic electronic material film opposite to the portion that provides the current path. The second organic electronic material film contains a second organic electronic material and an electron acceptor or an electron donor.