Abstract: When capacity coupling between an output gate electrode (OG) and a last-stage transfer electrode is large at an output end of a CCD shift register, an electric potential of the OG is varied according to transfer clocks with the result that noise is liable to generate in an output signal. As measures for this, convex portions projecting horizontally are formed in those positions of the last-stage transfer electrode and the OG, which correspond to a channel region, and overlap between the electrodes is caused only on the convex portions. A clearance is formed between the OG and the transfer electrode except those locations, in which the convex portions are provided. In that location, in which the OG and the transfer electrode, respectively, are extended relatively lengthily toward wirings, the electrodes do not overlap each other. In this manner, capacity coupling between the electrodes is reduced.

Abstract: A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.

Abstract: A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.

Abstract: In an image pickup portion of a frame transfer CCD image sensor, a constitution that inhibits color mixing from occurring between light-sensitive pixels adjacent along a vertical CCD shift register channel is provided. A protrusion extending on the channel is formed at a clock wiring formed on a channel stop of the vertical CCD shift register with an wiring layer having the light-shielding property. When the protrusion portion is disposed at a boundary of light-sensitive pixels in the channel, a non-light-shielding portion generated at the boundary can be suppressed. The protrusions are disposed so as to alternately protrude from the clock wirings on both sides of the channel.

Abstract: A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.

Abstract: A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.

Abstract: A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.

Abstract: A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.

Abstract: When capacity coupling between an output gate electrode (OG) and a last-stage transfer electrode is large at an output end of a CCD shift register, an electric potential of the OG is varied according to transfer clocks with the result that noise is liable to generate in an output signal. As measures for this, convex portions projecting horizontally are formed in those positions of the last-stage transfer electrode and the OG, which correspond to a channel region, and overlap between the both electrodes is caused only on the portions. A clearance is formed between the OG and the transfer electrode except those locations, in which the convex portions are provided. In particular, in that location, in which the OG and the transfer electrode, respectively, are extended relatively lengthily toward wirings, the both electrodes do not overlap each other. In this manner, capacity coupling between the both electrodes is reduced.

Abstract: In an image pickup portion of a frame transfer CCD image sensor, a constitution that inhibits color mixing from occurring between light-sensitive pixels adjacent along a vertical CCD shift register channel is provided. A protrusion extending on the channel is formed at a clock wiring formed on a channel stop of the vertical CCD shift register with an wiring layer having the light-shielding property. When the protrusion portion is disposed at a boundary of light-sensitive pixels in the channel, a non-light-shielding portion generated at the boundary can be suppressed. The protrusions are disposed so as to alternately protrude from the clock wirings on both sides of the channel.

Abstract: A solid state image capturing device comprises a vertical transfer section including a plurality of vertical shift registers which vertically transfer information charges generated in a plurality of light-receiving pixels arranged in a matrix form, and a horizontal transfer section including a horizontal shift register in which each bit thereof is coupled to each of the vertical shift registers of the vertical transfer section, wherein the information charges corresponding to a plurality of light-receiving pixels transferred by the horizontal shift register are added and then horizontally transferred. Thus, transfer time of the information charges during horizontal transfer can be reduced.

Abstract: A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.

Abstract: A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.