Abstract: A light-emitting element includes the following: a first electrode and a second electrode; and a light-emitting layer disposed between the first electrode and the second electrode. The light-emitting layer includes a plurality of quantum dots, and a mixed crystalline body-containing at least one of ZnS or ZnSe and containing Zn(OH)2.

Abstract: A light-emitting element includes: a first anode; a first cathode; and a light-emitting layer between the first anode and the first cathode, the light-emitting layer containing a first quantum dot that emits light of a first color, wherein the first quantum dot includes: a first core; and a first shell around the first core, the first shell containing a transition metal oxide.

Abstract: A light-emitting element includes: a first electrode; a second electrode disposed opposite the first electrode; a light-emitting layer disposed between the first electrode and the second electrode and containing quantum dots; and a carrier transport layer disposed between the first electrode and a surface of the light-emitting layer on a second electrode side, including a plurality of protrusions extending toward the second electrode side, and containing a carrier transport material, wherein at least parts of the plurality of protrusions of the carrier transport layer and at least parts of a plurality of gaps between the plurality of protrusions are covered by the quantum dots.

Abstract: A light-emitting device includes: an anode; a cathode; a light-emitting layer provided between the anode and the cathode, and containing a first light-emitting material emitting a first-color light and a second light-emitting material emitting a second-color light greater in peak wavelength than the first-color light, at least one of the first light-emitting material or the second light-emitting material being quantum dots; and a power supply unit controlling a frequency of a voltage to be applied between the anode and the cathode, in accordance with the first-color light and the second-color light.

Abstract: A display device includes a light-emitting element that includes a first electrode, an second electrode, a light-emitting layer provided between the first electrode and the second electrode, a first function layer provided between the light-emitting layer and the second electrode and in contact with the second electrode, and a first cooling element that includes a third electrode. An extending portion of the second electrode at least partially overlaps the third electrode, and an extending portion of the first function layer overlaps the extending portion of the second electrode and is in contact with the extending portion of the second electrode and the third electrode.

Abstract: A light-emitting element includes a light-emitting layer, and the light-emitting layer includes a plurality of quantum dots covered by shells containing a ferritin protein.

Abstract: A display device includes: ferritin encaging a first quantum dot and modified with a first peptide bound to a first pixel electrode; and ferritin encaging a second quantum dot and modified with a second peptide bound to a second pixel electrode. A first metal material and a second metal material are of different types.

Abstract: A display device includes a plurality of pixel electrodes, a common electrode common to the plurality of pixel electrodes, and a light-emitting layer sandwiched between the plurality of pixel electrodes and the common electrode. The light-emitting layer includes quantum dots covered by ferritin. Each of the plurality of pixel electrodes and the quantum dots are bonded via a peptide modifying the ferritin.

Abstract: A light-emitting element includes: an anode electrode configured to supply holes; a cathode electrode configured to supply electrons; and a light-emitting layer disposed between the anode electrode and the cathode electrode. The light-emitting layer includes a plurality of quantum dot phosphors configured to emit light in conjunction with combining of holes supplied from the anode electrode and electrons supplied from the cathode electrode and a p-type dopant.

Abstract: A light-emitting element includes: an anode; a cathode; and a light-emitting layer between the anode and the cathode, wherein the light-emitting layer contains quantum dots, and the quantum dots have a number average particle diameter greater than or equal to DLO2 and less than or equal to 100 nm, where DLO2 is a particle diameter of the quantum dots when the quantum dots exhibit an energy gap, between a ground state and a first excited state of a conduction band thereof, that is equivalent to twice an LO phonon energy of a material for the quantum dots.

Abstract: An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSP1 for high sensitivity (for low temperature use) and sensitivity spectrum SSP2 for low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSP1 and temperature data for the infrared light detected using sensitivity spectrum SSP2, in order to output a temperature distribution in a measurement region.

Abstract: Provided is an infrared detection apparatus without a bandpass filter and capable of reducing an error produced when a temperature of an object is calculated. A detection unit has a quantum-dot stacked structure. A first voltage and a second voltage are respectively provided for setting a first responsivity peak wavelength and a second responsivity peak wavelength to be used for detecting an infrared ray in the detection unit. The second responsivity peak wavelength is different from the first responsivity peak wavelength. A detector detects (i) a first photocurrent to be output from the detection unit when the first voltage is applied to the photoelectric conversion layer, and (ii) a second photocurrent to be output from the detection unit when the second voltage is applied to the photoelectric conversion layer. A calculator calculates a temperature of an object based on the first photocurrent and the second photocurrent detected by the detector.

Abstract: A high detectivity infrared photodetector is provided. An infrared photodetector 10 includes n-type semiconductor layers 3 and 5 and a photoelectric conversion layer 4. The photoelectric conversion layer 4 includes quantum dots 411, a barrier layer 42, and a single-sided barrier layer 43. The single-sided barrier layer 43 is inserted between the barrier layer 42 and the n-type semiconductor layer 5 and has a wider band gap than does the barrier layer 42. Letting y be an energy level difference between the bottom of the conduction band of the single-sided barrier layer 43 and the bottom of the conduction band of the n-type semiconductor layer 5, z be a voltage in volts applied to the photoelectric conversion layer 4, and d be a thickness in nanometers of the photoelectric conversion layer 4, the infrared photodetector 10 satisfies y?27×exp(0.64×z/(d×10000)).

Abstract: A high detectivity infrared photodetector is provided. An infrared photodetector 10 includes n-type semiconductor layers 3 and 5 and a photoelectric conversion layer 4. The photoelectric conversion layer 4 includes quantum dots 411, a barrier layer 42, and a single-sided barrier layer 43. The single-sided barrier layer 43 is inserted between the barrier layer 42 and the n-type semiconductor layer 5 and has a wider band gap than does the barrier layer 42. Letting y be an energy level difference between the bottom of the conduction band of the single-sided barrier layer 43 and the bottom of the conduction band of the n-type semiconductor layer 5, z be a voltage in volts applied to the photoelectric conversion layer 4, and d be a thickness in nanometers of the photoelectric conversion layer 4, the infrared photodetector 10 satisfies y?27×exp(0.64×z/(d×10000)).

Abstract: An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSP1 for high sensitivity (for low temperature use) and sensitivity spectrum SSP2 for low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSP1 and temperature data for the infrared light detected using sensitivity spectrum SSP2, in order to output a temperature distribution in a measurement region.