Abstract: In a charged-particle beam exposure method, an aperture mask for partial overall exposure is used to perform exposure of a pattern so that there is no overlapping, thereby forming a number of transfer patterns. When doing this, exposure is done with an amount of exposure that is 1/2 the amount capable of forming a pattern. Then, the shot position is changes so that the exposure position overlaps with the previous exposure position and exposure is done to form the next transfer pattern. When doing this, the amount of exposure is also 1/2 the amount required to form a pattern. In this manner, exposure is performed two times each, with the amount of exposure being 1/2 each time, as the exposure position is shifted.

Abstract: In an MIM or MIS electron source that is formed by a first conductive layer 101, an insulating layer 103 that is formed onto said first conductive layer 101, and a second conductive layer 104 that is formed onto said insulating layer 103, wherein a voltage is applied between said first and second conductive layers 101,104, so as to cause a tunneling current to occur in said insulating layer 103, the film thickness of said insulating layer 103 and the film thickness of said second conductive layer 104 are formed so as to be uniform.

Abstract: To provide an electron-beam exposure system and a method applied therein for enabling control of an electron-beam current to be probed on a wafer surface at a fixed value using a simple process and without needing to prepare various shot sizes or changing emission current of the electron-beam source, the electron-beam exposure system comprises a beam-current adjustment filter having a number of electron-beam absorbent membranes positioned in a path of an electron-beam projected through one of a number of cell patterns used for cell projection lithography. Beam absorption coefficients of the electron-beam absorbent membranes are prepared to give a fixed current intensity of the electron-beam for each of the cell patterns and are determined by considering open space of the cell patterns.