Abstract: A semiconductor device of an embodiment includes an ECC decoding processing circuit configured to perform ECC decoding on ECC frame data in a lateral direction of a product code frame, an RS decoding processing circuit configured to perform Reed-Solomon (RS) decoding on second frame data in a longitudinal direction of the product code frame, a memory M0 in which a syndrome generated for the ECC frame data decoded is stored, a memory M1 in which an RS syndrome generated for ECC frame data for which the ECC decoding has been successful is stored, and a memory D in which ECC frame data for which the ECC decoding has been failed is stored as frame data which cannot be corrected through decoding, and frame collection processing, and iterative correction processing of performing RS decoding on the uncorrected frame data collected in the frame collection processing are executed.

Abstract: A semiconductor device of an embodiment includes an ECC decoding processing circuit configured to perform ECC decoding on ECC frame data in a lateral direction of a product code frame, an RS decoding processing circuit configured to perform Reed-Solomon (RS) decoding on second frame data in a longitudinal direction of the product code frame, a memory M0 in which a syndrome generated for the ECC frame data decoded is stored, a memory M1 in which an RS syndrome generated for ECC frame data for which the ECC decoding has been successful is stored, and a memory D in which ECC frame data for which the ECC decoding has been failed is stored as frame data which cannot be corrected through decoding, and frame collection processing, and iterative correction processing of performing RS decoding on the uncorrected frame data collected in the frame collection processing are executed.

Abstract: A memory system in an embodiment includes a nonvolatile memory and a memory controller. The memory stores a multi-dimensional error correction code including at least one symbol that is capable of being protected by at least a first and a second component code. The controller reads the error correction code from the memory, executes hard decision decoding of the first component code with respect to the read error correction code and outputs a first decoding result and index information for calculating likelihood of the first decoding result, executes, when the hard decision decoding fails, soft decision decoding of the second component code by using the first decoding result and the index information and outputs a decoding result as a hard bit, and, executes, when the soft decision decoding fails, the hard decision decoding with respect to the result of the soft decision decoding output.

Abstract: A memory system in an embodiment includes a nonvolatile memory and a memory controller. The memory stores a multi-dimensional error correction code including at least one symbol that is capable of being protected by at least a first and a second component code. The controller reads the error correction code from the memory, executes hard decision decoding of the first component code with respect to the read error correction code and outputs a first decoding result and index information for calculating likelihood of the first decoding result, executes, when the hard decision decoding fails, soft decision decoding of the second component code by using the first decoding result and the index information and outputs a decoding result as a hard bit, and, executes, when the soft decision decoding fails, the hard decision decoding with respect to the result of the soft decision decoding output.

Abstract: An address generating circuit according to an embodiment includes a register that maintains a partition address set by a CPU, a comparator that determines whether a designated address designated by the CPU designates the interleaved area or the non-interleaved area, a selection signal generating unit that generates the selection signal based on a least significant bit of the designated address in a case of the interleaved area and generates the selection signal based on a high-order bit other than the least significant bit of the designated address in a case of the non-interleaved area, and a physical address generating unit that generates the physical address acquired by excluding the least significant bit from the designated address in a case of the interleaved area and generates the physical address acquired by excluding the high-order bit from the designated address in a case of the non-interleaved area.

Abstract: An address generating circuit according to an embodiment includes a register that maintains a partition address set by a CPU, a comparator that determines whether a designated address designated by the CPU designates the interleaved area or the non-interleaved area, a selection signal generating unit that generates the selection signal based on a least significant bit of the designated address in a case of the interleaved area and generates the selection signal based on a high-order bit other than the least significant bit of the designated address in a case of the non-interleaved area, and a physical address generating unit that generates the physical address acquired by excluding the least significant bit from the designated address in a case of the interleaved area and generates the physical address acquired by excluding the high-order bit from the designated address in a case of the non-interleaved area.

Abstract: A thermoelectric material, which has a superior thermoelectric characteristic and is environment-friendly and is suitable for mass productivity due to the lower cost, is provided. The thermoelectric material is an iron alloy that mainly contains Fe, V and Al and that carbides are dispersed into the matrix, wherein [V concentration?C concentration] is 20 or more at % to 32 or less at % and [Al concentration+Si concentration] is 20 or more at % to 30 or less at %. Especially in the thermoelectric material of the present invention, a high Seebeck coefficient can be kept and a lower electrical resistivity can be obtained, thereby improving an output factor and achieving a superior thermoelectric characteristic.

Abstract: A thermoelectric material, which has a superior thermoelectric characteristic and is environment-friendly and is suitable for mass productivity due to the lower cost, is provided. The thermoelectric material is an iron alloy that mainly contains Fe, V and Al and that carbides are dispersed into the matrix, wherein [V concentration?C concentration] is 20 or more at % to 32 or less at % and [Al concentration+Si concentration] is 20 or more at % to 30 or less at %. Especially in the thermoelectric material of the present invention, a high Seebeck coefficient can be kept and a lower electrical resistivity can be obtained, thereby improving an output factor and achieving a superior thermoelectric characteristic.