Patents by Inventor Takahiro Hanyu
Takahiro Hanyu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071452Abstract: The present invention provides an access controller, and a data transfer method. The access controller controls accesses to the MRAM by reading data in advance and backing up the data when data is to be read from the MRAM.Type: ApplicationFiled: October 25, 2023Publication date: February 29, 2024Applicant: TOHOKU UNIVERSITYInventors: Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Takahiro Hanyu, Tetsuo Endoh, Hideo Ohno
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Patent number: 11862217Abstract: The present invention provides a device with low power and high performance, which can be applied to sensor nodes, a sensor node using the same, an access controller, a data transfer method, and execute a processing method in a microcontroller. The device has: an MRAM; a non-volatile CPU configured to include a nonvolatile memory; a non-volatile FPGA-ACC configured to include a nonvolatile memory and execute a part of operations on the nonvolatile CPU; and a power-gating control unit that controls power supply to each memory cell in the MRAM, the non-volatile CPU, and the non-volatile FPGA-ACC. The device is further provided with an access controller that controls accesses to the MRAM by reading data in advance and backing up the data when data is to be read from the MRAM.Type: GrantFiled: February 15, 2020Date of Patent: January 2, 2024Assignee: TOHOKU UNIVERSITYInventors: Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Takahiro Hanyu, Tetsuo Endoh, Hideo Ohno
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Publication number: 20230409288Abstract: A processing circuit according to an embodiment includes a plurality of logic gates in combination each of which is configured to probabilistically determine, based on signal values of one or two or more input nodes and output nodes at a certain time, signal values at at least one of the input nodes and the output nodes at a subsequent time, in which the processing circuit controls the signal values based on a relationship to be satisfied between at least some nodes of the input nodes and the output nodes.Type: ApplicationFiled: June 20, 2023Publication date: December 21, 2023Applicants: TOHOKU UNIVERSITY, CANON MEDICAL SYSTEMS CORPORATIONInventors: Takahiro HANYU, Naoya ONIZAWA, Seiichi SHIN, Hiroyuki FUJITA, Koji YANO
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Patent number: 11790966Abstract: A nonvolatile logic circuit includes: a memory unit having a pair of resistive memory elements; a computation unit connected to the memory unit and configured to perform an operation based on an input signal and a logic value corresponding to a resistance state of the pair of resistive memory elements; a determination circuit configured to determine whether the resistance state of the pair of resistive memory elements is a complementary state or a non-complementary state; and an output circuit connected to the computation unit and the determination circuit, and configured to output a signal corresponding to an operation result by the computation unit or a signal corresponding to a determination result by the determination circuit.Type: GrantFiled: November 28, 2019Date of Patent: October 17, 2023Assignee: TOHOKU UNIVERSITYInventors: Masanori Natsui, Takahiro Hanyu, Tetsuo Endoh
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Patent number: 11610615Abstract: A lookup table circuit constituting a programmable logic device includes: a memory cell array including a plurality of memory cells, each having a resistive memory element; a selection circuit connected to the memory cell array and configured to output, to the memory cell array, a single cell-select signal or two or more cell-select signals for selecting a single memory cell or two or more memory cells among the plurality of memory cells, based on input of a plurality of logic signals; and a read circuit connected to the memory cell array and configured to read data from the single memory cell or the two or more memory cells selected by the single cell-select signal or the two or more cell-select signals, among the plurality of memory cells. The selection circuit is separated from a path along which the read circuit is configured to read data from the memory cell array.Type: GrantFiled: September 7, 2018Date of Patent: March 21, 2023Assignee: TOHOKU UNIVERSITYInventors: Takahiro Hanyu, Daisuke Suzuki, Tetsuo Endoh
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Patent number: 11600313Abstract: A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element, a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on the cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.Type: GrantFiled: November 3, 2021Date of Patent: March 7, 2023Assignee: TOHOKU UNIVERSITYInventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Patent number: 11544040Abstract: A random number generator according to one embodiment includes a write circuit, a read circuit, and a signal output circuit. The write circuit inverts magnetization of a magnetic layer of a magnetic tunnel junction element stochastically by supplying current to the magnetic layer. The read circuit reads the magnetization. The signal output circuit generates a random number on the basis of the magnetization read by the read circuit. The random number generator includes a sequence control circuit that controls the write circuit and the read circuit. The sequence control circuit regulates the write circuit to supply the current to the write circuit in a first period, and causes the read circuit to read the magnetization after the first period is finished and then a second period longer than the first period is elapsed.Type: GrantFiled: September 11, 2020Date of Patent: January 3, 2023Assignees: TOHOKU UNIVERSITY, CANON MEDICAL SYSTEMS CORPORATIONInventors: Takahiro Hanyu, Naoya Onizawa, Akira Tamakoshi, Hiroyuki Fujita, Hitoshi Yamagata
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Publication number: 20220157361Abstract: The present invention provides a device with low power and high performance, which can be applied to sensor nodes, a sensor node using the same, an access controller, a data transfer method, and execute a processing method in a microcontroller. The device has: an MRAM; a non-volatile CPU configured to include a nonvolatile memory; a non-volatile FPGA-ACC configured to include a nonvolatile memory and execute a part of operations on the nonvolatile CPU; and a power-gating control unit that controls power supply to each memory cell in the MRAM, the non-volatile CPU, and the non-volatile FPGA-ACC. The device is further provided with an access controller that controls accesses to the MRAM by reading data in advance and backing up the data when data is to be read from the MRAM.Type: ApplicationFiled: February 15, 2020Publication date: May 19, 2022Applicant: TOHOKU UNIVERSITYInventors: Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Takahiro Hanyu, Tetsuo Endoh, Hideo Ohno
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Publication number: 20220076722Abstract: A nonvolatile logic circuit includes: a memory unit having a pair of resistive memory elements; a computation unit connected to the memory unit and configured to perform an operation based on an input signal and a logic value corresponding to a resistance state of the pair of resistive memory elements; a determination circuit configured to determine whether the resistance state of the pair of resistive memory elements is a complementary state or a non-complementary state; and an output circuit connected to the computation unit and the determination circuit, and configured to output a signal corresponding to an operation result by the computation unit or a signal corresponding to a determination result by the determination circuit.Type: ApplicationFiled: November 28, 2019Publication date: March 10, 2022Inventors: Masanori Natsui, Takahiro Hanyu, Tetsuo Endoh
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Publication number: 20220059149Abstract: A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element, a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on the cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.Type: ApplicationFiled: November 3, 2021Publication date: February 24, 2022Inventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Patent number: 11183228Abstract: A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element; a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.Type: GrantFiled: September 14, 2018Date of Patent: November 23, 2021Assignee: TOHOKU UNIVERSITYInventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Patent number: 11133046Abstract: A data write device for a resistive memory element, the resistive memory element including: a conductive electrode provided at one end of the memory element; and a reading electrode provided at the other end of the memory element being configured to vary a resistance of the memory element by applying a write current to the conductive electrode, the data write device for the resistive memory element further includes: a writing means, an output means, and a control means. The output means is provided between a power supply and the reading electrode. As output signals, a read signal from the memory element and a monitor signal to monitor a writing status of the memory element written by the writing means are output from the output means. By the monitor signal, a termination of data-writing into the resistive memory element is detected.Type: GrantFiled: October 31, 2017Date of Patent: September 28, 2021Assignee: TOHOKU UNIVERSITYInventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Publication number: 20210193206Abstract: A lookup table circuit constituting a programmable logic device includes: a memory cell array including a plurality of memory cells, each having a resistive memory element; a selection circuit connected to the memory cell array and configured to output, to the memory cell array, a single cell-select signal or two or more cell-select signals for selecting a single memory cell or two or more memory cells among the plurality of memory cells, based on input of a plurality of logic signals; and a read circuit connected to the memory cell array and configured to read data from the single memory cell or the two or more memory cells selected by the single cell-select signal or the two or more cell-select signals, among the plurality of memory cells. The selection circuit is separated from a path along which the read circuit is configured to read data from the memory cell array.Type: ApplicationFiled: September 7, 2018Publication date: June 24, 2021Inventors: Takahiro Hanyu, Daisuke Suzuki, Tetsuo Endoh
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Publication number: 20210117159Abstract: A random number generator according to one embodiment includes a write circuit, a read circuit, and a signal output circuit. The write circuit inverts magnetization of a magnetic layer of a magnetic tunnel junction element stochastically by supplying current to the magnetic layer. The read circuit reads the magnetization. The signal output circuit generates a random number on the basis of the magnetization read by the read circuit. The random number generator includes a sequence control circuit that controls the write circuit and the read circuit. The sequence control circuit regulates the write circuit to supply the current to the write circuit in a first period, and causes the read circuit to read the magnetization after the first period is finished and then a second period longer than the first period is elapsed.Type: ApplicationFiled: September 11, 2020Publication date: April 22, 2021Applicants: TOHOKU UNIVERSITY, CANON MEDICAL SYSTEMS CORPORATIONInventors: Takahiro HANYU, Naoya ONIZAWA, Akira TAMAKOSHI, Hiroyuki FUJITA, Hitoshi YAMAGATA
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Patent number: 10896729Abstract: A data write circuit of a resistive memory element is provided, the device being capable of writing with low writing energy using a simple circuit. The data write circuit of the resistive memory element, includes: a complementary resistive memory element; writing means for making the complementary resistive memory element cause a resistance change; detection means for detecting a writing state in the complementary resistive memory element; and control means for controlling writing by the writing means, based on a detected signal of the detection means.Type: GrantFiled: October 31, 2017Date of Patent: January 19, 2021Assignee: TOHOKU UNIVERSITYInventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Patent number: 10783936Abstract: In reading of a memory unit, an read failure operation due to variation in characteristic of a transistor in a dynamic load is reduced. A read circuit that reads a voltage obtained by a voltage division of a dynamic load unit and the memory unit as an output of the memory unit includes the dynamic load unit having one end connected to a side of a power supply and the other end connected to a side of the memory unit, and a feedback unit that, by a feedback of the voltage obtained by the voltage division that is divided between the dynamic load unit and the memory unit, holds the voltage obtained by the voltage division. The dynamic load unit has an array structure in which a plurality of resistive memory elements are connected in series, in parallel, or in series-parallel. The dynamic load unit has the array structure of the resistive memory elements and this structure can suppress the read failure operation due to the variation in dynamic load.Type: GrantFiled: December 8, 2017Date of Patent: September 22, 2020Assignee: TOHOKU UNIVERSITYInventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Patent number: 10783294Abstract: A circuit design support system, a circuit design support method, a circuit design support program, and a recording medium having the program recorded thereon are provided by which a design can be performed in consideration of the stochastic operation of the stochastic operation element and the influence caused by the stochastic operation of the stochastic operation element on the operation reliability of the circuit can be evaluated.Type: GrantFiled: August 3, 2017Date of Patent: September 22, 2020Assignee: TOHOKU UNIVERSITYInventors: Masanori Natsui, Akira Tamakoshi, Takahiro Hanyu, Akira Mochizuki, Tetsuo Endoh, Hiroki Koike, Hideo Ohno
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Publication number: 20200265883Abstract: A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element; a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.Type: ApplicationFiled: September 14, 2014Publication date: August 20, 2020Inventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Publication number: 20200211611Abstract: A data write device for a resistive memory element, the resistive memory element including: a conductive electrode provided at one end of the memory element; and a reading electrode provided at the other end of the memory element being configured to vary a resistance of the memory element by applying a write current to the conductive electrode, the data write device for the resistive memory element further includes: a writing means, an output means, and a control means. The output means is provided between a power supply and the reading electrode. As output signals, a read signal from the memory element and a monitor signal to monitor a writing status of the memory element written by the writing means are output from the output means. By the monitor signal, a termination of data-writing into the resistive memory element is detected.Type: ApplicationFiled: October 31, 2017Publication date: July 2, 2020Applicant: TOHOKU UNIVERSITYInventors: Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno, Tetsuo Endoh
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Publication number: 20200082884Abstract: A data write circuit of a resistive memory element is provided, the device being capable of writing with low writing energy using a simple circuit. The data write circuit of the resistive memory element, includes: a complementary resistive memory element; writing means for making the complementary resistive memory element cause a resistance change; detection means for detecting a writing state in the complementary resistive memory element; and control means for controlling writing by the writing means, based on a detected signal of the detection means.Type: ApplicationFiled: October 31, 2017Publication date: March 12, 2020Inventors: TAKAHIRO HANYU, DAISUKE SUZUKI, HIDEO OHNO, TETSUO ENDOH