Abstract: To provide a solid-state imaging device capable of further improving quality and reliability of the solid-state imaging device. Provided is a solid-state imaging device including: a first substrate; a second substrate laminated on the first substrate by direct bonding on a side opposite to a light incident side of the first substrate, the second substrate having a size different from a size of the first substrate; a third substrate provided on a side opposite to a light incident side of the second substrate; and an insulating layer formed between the first substrate and the third substrate, in which the third substrate includes a well formed on a light incident side of the third substrate.

Abstract: Provided is a semiconductor device having high planarity in an in-plane direction. This semiconductor device includes a semiconductor substrate, a first plating film pattern, a second plating film pattern, and an insulating layer. The semiconductor substrate has a first surface, and a second surface on a side opposite to the first surface. The first plating film pattern includes a first portion that covers a first regional portion of the first surface, and a second portion that is stacked to cover a portion of the first portion. The second plating film pattern includes a third portion that covers a second regional portion different from the first regional portion of the first surface, and also includes a fourth portion that is stacked to cover a portion of the third portion. A portion between the second portion and the fourth portion is filled with the insulating layer.

Abstract: Provided is a semiconductor device having high planarity in an in-plane direction. This semiconductor device includes a semiconductor substrate, a first plating film pattern, a second plating film pattern, and an insulating layer. The semiconductor substrate has a first surface, and a second surface on a side opposite to the first surface. The first plating film pattern includes a first portion that covers a first regional portion of the first surface, and a second portion that is stacked to cover a portion of the first portion. The second plating film pattern includes a third portion that covers a second regional portion different from the first regional portion of the first surface, and also includes a fourth portion that is stacked to cover a portion of the third portion. A portion between the second portion and the fourth portion is filled with the insulating layer.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region; a photoelectric converter; a first hydrogen block layer; an interlayer insulating layer; and a separation groove. The photoelectric converter includes a first electrode, a second electrode, and an electric charge accumulation layer and a photoelectric conversion layer. The first electrode is provided on a light receiving surface side of the semiconductor substrate and includes a plurality of electrodes. The second electrode is disposed to be opposed to the first electrode. The electric charge accumulation layer and the photoelectric conversion layer are stacked and provided in order between the first electrode and the second electrode and extend in the effective pixel region.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a sensor substrate having a light-receiving region in which a plurality of light-receiving elements are arranged and a peripheral region provided around the light-receiving region; a sealing member disposed to be opposed to one surface of the sensor substrate; a resin layer that attaches the sensor substrate and the sealing member to each other; and an excavated part provided in the peripheral region of the one surface of the sensor substrate, and in which the resin layer is embedded, with the resin layer having one or a plurality of gaps inside the excavated part in a plan view.

Abstract: Provided is a semiconductor device having high planarity in an in-plane direction. This semiconductor device includes a semiconductor substrate, a first plating film pattern, a second plating film pattern, and an insulating layer. The semiconductor substrate has a first surface, and a second surface on a side opposite to the first surface. The first plating film pattern includes a first portion that covers a first regional portion of the first surface, and a second portion that is stacked to cover a portion of the first portion. The second plating film pattern includes a third portion that covers a second regional portion different from the first regional portion of the first surface, and also includes a fourth portion that is stacked to cover a portion of the third portion. A portion between the second portion and the fourth portion is filled with the insulating layer.

Abstract: A power switching apparatus includes: a first input terminal to which first power is supplied; a second input terminal to which second power is supplied, the second power having a voltage that is lower than a voltage that the first power has; a first output terminal to supply to an outside the first power supplied to the first input terminal; and a second output terminal to supply to the outside the second power supplied to the second input terminal. First switching means manages the supplying of the second power from the first input terminal to the second output terminal. Second switching means manages the supplying of the second power from the second input terminal to the second output terminal. A processor manages the supplies of the first power and the second power using the first and second switching means.

Abstract: A method for producing a metal thin film on a substrate includes: a step of applying an ink to a flat blanket; a first transfer step of bringing the first blanket and a letterpress having a predetermined pattern of projections into contact by a pressure compression while the flat blanked and the letterpress being disposed opposite each other, to selectively transfer a portion of the ink on the flat blanket corresponding to the projections to the letterpress; a second transfer step of bringing the flat blanket obtained after the first transfer step and the substrate into contact by pressure compression while the flat blanket and the substrate being disposed opposite each other, to transfer the ink remaining on the flat blanket to the substrate; and a step of subjecting the substrate obtained after the second transfer step to electroless plating to deposit a metal thin film on the substrate.

Abstract: A method for producing a metal thin film on a substrate includes: a step of applying an ink to a flat blanket; a first transfer step of bringing the first blanket and a letterpress having a predetermined pattern of projections into contact by a pressure compression while the flat blanked and the letterpress being disposed opposite each other, to selectively transfer a portion of the ink on the flat blanket corresponding to the projections to the letterpress; a second transfer step of bringing the flat blanket obtained after the first transfer step and the substrate into contact by pressure compression while the flat blanket and the substrate being disposed opposite each other, to transfer the ink remaining on the flat blanket to the substrate; and a step of subjecting the substrate obtained after the second transfer step to electroless plating to deposit a metal thin film on the substrate.

Abstract: A power switching apparatus includes: a first input terminal to which first power is supplied; a second input terminal to which second power is supplied, the second power having a voltage that is lower than a voltage that the first power has; a first output terminal to supply to an outside the first power supplied to the first input terminal; and a second output terminal to supply to the outside the second power supplied to the second input terminal. First switching means manages the supplying of the second power from the first input terminal to the second output terminal. Second switching means manages the supplying of the second power from the second input terminal to the second output terminal. A processor manages the supplies of the first power and the second power using the first and second switching means.

Abstract: A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

Abstract: A printing method including the steps of, forming a transfer layer on a blanket, forming a groove portion on the transfer layer by pressing a protrusion portion of a mold member including the protrusion portion having a predetermined pattern against the transfer layer, the groove portion having the pattern corresponding to the protrusion portion, forming a print pattern layer on the blanket by causing the transfer layer on the blanket and a relief printing plate including a convex portion having a pattern corresponding to a reverse pattern of the protrusion portion to face each other and pressure-contacting them so that a portion on the transfer layer corresponding to the convex portion is selectively eliminated, and transferring the print pattern layer onto a substrate to be printed by causing the print pattern layer on the blanket and the substrate to be printed to face each other and pressure-contacting them.

Abstract: A polarizer capable of being manufactured in simple steps, and a method of manufacturing the polarizer, as well as a liquid crystal projector are provided. The polarizer includes a substrate having light permeability, and a plurality of linear projections being arranged on the substrate and extending along one direction within a plane thereof. Each of the linear projections having a base layer and a plating layer in the named order from the substrate, the base layer containing a catalyst material for electroless plating process, and the plating layer being deposited by using the base layer as a catalyst.

Abstract: A polarizer capable of being manufactured in simple steps, and a method of manufacturing the polarizer, as well as a liquid crystal projector are provided. The polarizer includes a substrate having light permeability, and a plurality of linear projections being arranged on the substrate and extending along one direction within a plane thereof. Each of the linear projections having a base layer and a plating layer in the named order from the substrate, the base layer containing a catalyst material for electroless plating process, and the plating layer being deposited by using the base layer as a catalyst.

Abstract: A method for producing a metal thin film on a substrate includes: a step of applying an ink to a flat blanket; a first transfer step of bringing the first blanket and a letterpress having a predetermined pattern of projections into contact by a pressure compression while the flat blanked and the letterpress being disposed opposite each other, to selectively transfer a portion of the ink on the flat blanket corresponding to the projections to the letterpress; a second transfer step of bringing the flat blanket obtained after the first transfer step and the substrate into contact by pressure compression while the flat blanket and the substrate being disposed opposite each other, to transfer the ink remaining on the flat blanket to the substrate; and a step of subjecting the substrate obtained after the second transfer step to electroless plating to deposit a metal thin film on the substrate.

Abstract: A method for producing a metal thin film on a substrate includes: a step of applying an ink to a flat blanket; a first transfer step of bringing the first blanket and a letterpress having a predetermined pattern of projections into contact by a pressure compression while the flat blanked and the letterpress being disposed opposite each other, to selectively transfer a portion of the ink on the flat blanket corresponding to the projections to the letterpress; a second transfer step of bringing the flat blanket obtained after the first transfer step and the substrate into contact by pressure compression while the flat blanket and the substrate being disposed opposite each other, to transfer the ink remaining on the flat blanket to the substrate; and a step of subjecting the substrate obtained after the second transfer step to electroless plating to deposit a metal thin film on the substrate.

Abstract: A method for forming a reflection electrode is provided which includes the steps of: forming a first catalytic layer in a first region of an electrode forming region of a substrate; forming a first plating layer on the first catalytic layer by performing a first electroless plating treatment; forming a second catalytic layer at least in a region (second region) of the electrode forming region other than the first region; and forming a second plating layer on the second catalytic layer by performing a second electroless plating treatment, so that the reflection electrode is formed to have a concave-convex surface.

Abstract: A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

Abstract: A printing method including the steps of, forming a transfer layer on a blanket, forming a groove portion on the transfer layer by pressing a protrusion portion of a mold member including the protrusion portion having a predetermined pattern against the transfer layer, the groove portion having the pattern corresponding to the protrusion portion, forming a print pattern layer on the blanket by causing the transfer layer on the blanket and a relief printing plate including a convex portion having a pattern corresponding to a reverse pattern of the protrusion portion to face each other and pressure-contacting them so that a portion on the transfer layer corresponding to the convex portion is selectively eliminated, and transferring the print pattern layer onto a substrate to be printed by causing the print pattern layer on the blanket and the substrate to be printed to face each other and pressure-contacting them.

Abstract: A sensor assembly includes a elongate article and a plurality of elongate piezoelectric elements provided to the elongate article. Each of the piezoelectric elements is configured so that when a load is applied in a direction perpendicular to a surface of the piezoelectric element, a short axis direction of the piezoelectric element becomes a sensitivity direction in which a voltage is generated, and a major axis direction becomes a non-sensitivity direction in which a voltage is not generated.