Abstract: According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

Abstract: According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

Abstract: A suction stage may include a mounting section configured to mount a first substrate, and an evacuation section configured to evacuate air between the first substrate and the mounting section. The mounting section includes a ring-shaped first wall part, and a ring-shaped second wall part inside the first wall part. The evacuation section includes a first control valve between the evacuation section and a first region between the first and second wall parts, a second control valve between the evacuation section and a second region inside the second wall part, and a control section configured to control the valves. The control section is configured to control the valves so that suction and non-suction of the first substrate are alternately performed in at least one of the regions. Thus, suction of the first substrate may be deactivated in one of the regions, while the suction is active in the other region.

Abstract: According to the embodiment, a suction stage includes a mounting section configured to mount a first substrate, and an evacuation section configured to evacuate air between the first substrate and the mounting section. The mounting section includes a first wall part provided on an outer peripheral side of one end surface of the mounting section and shaped like a ring, and a second wall part provided inside the first wall part and shaped like a ring. The evacuation section includes a first control valve provided between the evacuation section and a first region between the first wall part and the second wall part, a second control valve provided between the evacuation section and a second region inside the second wall part, and a control section configured to control the first control valve and the second control valve.

Abstract: The embodiment of a substrate treatment device includes a treatment bath configured to store a treatment liquid in which a treatment object is to be immersed, a transport section configured to transport the treatment object, a temperature control section provided in at least one of the treatment bath and a position spaced from the treatment bath and configured to perform at least one of heating and cooling of the treatment object. the treatment object is at least one of: a laminated substrate including a device substrate, a support substrate, and an adhesive provided between the device substrate and the support substrate, the device substrate with the adhesive attached thereto, and the support substrate with the adhesive attached thereto.