Abstract: A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.

Abstract: A control device for a vehicle is configured to detect road markings on a road based on outside environment data relating to an environment around the vehicle, perform driver's assistance for warning of or avoiding departure of the vehicle from a running lane based on results of detection of road markings, and, if the road markings include markings indicating a neutral zone in which running of the vehicle is not recommended, change the conditions for actuation of driver's assistance so that driver's assistance with respect to entry into the neutral zone is suppressed.

Abstract: An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method. The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

Abstract: A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ?T in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ?T?10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

Abstract: A method of producing a silicon carbide single crystal includes: arranging a seed crystal in a heating container that defines a reaction chamber; and growing a silicon carbide single crystal on a surface of the seed crystal by supplying a supply gas containing a silicon carbide raw material gas while heating the reaction chamber. In the growing of the silicon carbide single crystal, the silicon carbide single crystal is grown by controlling a total pressure of the supply gas, which is an internal pressure of the heating container, to 40 kPa or more while controlling a flow rate of the silicon carbide raw material gas to a target value.

Abstract: Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth.

Abstract: An electrical connector includes a contact pin to be connected to a core wire of a coaxial cable, an insulating housing for holding the contact pin therein, a cylindrical outer contact covering the housing and a crimping member for attaching the outer contact to the coaxial cable. A base end portion of the outer contact is located between an inner insulator layer and an outer conductor layer of the coaxial cable. The outer contact is attached to the coaxial cable by crimping the crimping member onto the outer conductor layer of the coaxial cable located on the base end portion of the outer contact.

Abstract: An electrical connector includes contact pins, insulating housings for containing the contact pins therein and metallic outer contacts for respectively covering the housings. Each of the contact pins includes a horizontally extending portion, a contact portion, a connection portion, a downwardly extending portion and a press-fitting shoulder extending from a side portion of a base end portion of the horizontally extending portion in a width direction thereof. A width of the press-fitting shoulder of each of the contact pins decreases from a base side toward a tip side.

Abstract: A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ?T in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ?T?10° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

Abstract: An electrical connector includes contact pins, insulating housings for containing the contact pins therein and metallic outer contacts for respectively covering the housings. Each of the contact pins includes a horizontally extending portion, a contact portion, a connection portion, a downwardly extending portion and a press-fitting shoulder extending from a side portion of a base end portion of the horizontally extending portion in a width direction thereof. A width of the press-fitting shoulder of each of the contact pins decreases from a base side toward a tip side.

Abstract: An electrical connector includes a contact pin to be connected to a core wire of a coaxial cable, an insulating housing for holding the contact pin therein, a cylindrical outer contact covering the housing and a crimping member for attaching the outer contact to the coaxial cable. A base end portion of the outer contact is located between an inner insulator layer and an outer conductor layer of the coaxial cable. The outer contact is attached to the coaxial cable by crimping the crimping member onto the outer conductor layer of the coaxial cable located on the base end portion of the outer contact.

Abstract: A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.

Abstract: An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method. The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

Abstract: Laser processing methods are provided that are capable of processing a surface to be processed of a transparent material with a high accuracy even if the transparent material has a rear surface with a large roughness or has defects therein. The laser processing methods for processing a transparent material using a laser light, can include: attaching a laser light absorbing substance having an absorption coefficient for the laser light of 1 ?m?1 or more to a surface to be processed of the transparent material, the laser light having an oscillation wavelength in a range of 193 to 11000 nm, and the transparent material having an absorption coefficient for the laser light of 1 cm?1 or lower; and, emitting the laser light from a front surface side of the laser light absorbing substance attached to the transparent material to process the surface to be processed of the transparent material.

Abstract: Disclosed is a preparation method which makes it possible to produce an aminoalcohol derivative having a high optical purity and to enable the large scale synthesis thereof at a low price. For instance, a compound represented by the following general formula (8) is recrystallized in the course of the production process thereof: In this case, R1 represents, for instance, a trihalomethyl group; R2 represents, for instance, a hydrogen atom; R3 represents, for instance, a halogen atom; R4 represents, for instance, a lower alkyl group; X represents, for instance, a sulfur atom; n represents an integer ranging from 1 to 4; and W represents hydrogen chloride or hydrogen bromide.

Abstract: The invention provides 4-substituted aryl-5-hydroxyisoquinolinone derivatives and their pharmacologically acceptable addition salts with excellent inhibitory effect on poly (ADP-ribose) synthetase. 4-Substituted aryl-5-hydroxyisoquinolinone derivatives, represented by a general formula (1) and their pharmacologically acceptable addition salts.

Abstract: The invention provides 4-substituted aryl-5-hydroxyisoquinolinone derivatives and their pharmacologically acceptable addition salts with excellent inhibitory effect on poly (ADP-ribose) synthetase. 4-Substituted aryl-5-hydroxyisoquinolinone derivatives, represented by a general formula (1) and their pharmacologically acceptable addition salts.