Abstract: Provided is a manufacturing method of a silicon single crystal according to the present invention includes a melting process for generating a silicon melt containing a primary dopant, and a crystal pulling-up process that pulls up a silicon single crystal from the silicon melt. The crystal pulling-up process includes at least one additional doping process for adding a dopant raw material containing a secondary dopant into the silicon melt. A flow rate of Ar gas during a first period in which the secondary dopant is not added is set as a first flow rate, and the flow rate of Ar gas during a second period that includes a period in which the secondary dopant is added is set as a second flow rate that is greater than the first flow rate..

Abstract: A method of manufacturing a single crystal is provided with a raw material melting step of heating a silicon raw material in a quartz crucible using a carbon heater to generate a silicon melt; and a crystal pull-up step of pulling up a single crystal from the silicon melt generated by the raw material melting step, wherein the silicon raw material is heated with the maximum surface temperature of a first part of the heater that is positioned above at least the upper end of the quartz crucible maintained below 1500° C. in the raw material melting step.

Abstract: A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.

Abstract: A method of manufacturing a single crystal is provided with a raw material melting step of heating a silicon raw material in a quartz crucible using a carbon heater to generate a silicon melt; and a crystal pull-up step of pulling up a single crystal from the silicon melt generated by the raw material melting step, wherein the silicon raw material is heated with the maximum surface temperature of a first part of the heater that is positioned above at least the upper end of the quartz crucible maintained below 1500° C. in the raw material melting step.

Abstract: A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.