Abstract: A composition that includes a high-valent compound of copper, silver or indium; a linear, branched or cyclic C1-18 alcohol; and a Group VIII metal catalyst forms a metal film of copper, silver or indium on a substrate when the composition is coated on the substrate and heated to reduce the high-valent compound. The composition may alternatively include metal particles of silver, copper or indium in which the surface layer of the particle includes a high-valent compound of copper, silver or indium. A metal film of copper, silver or indium may also be formed on a substrate by coating a substrate with the composition including the metal particles, and heating to reduce the high-valent compound in the same manner as above.

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: Disclosed is a method for decomposing a plant residue and reducing a volume of the plant residue to a satisfactory level within a short period. Also disclosed is a bacterium for use in the method. Further disclosed is a material for decomposing a plant residue and reducing a volume of the plant residue, which contains the bacterium. A bacterium is found which is capable of decomposing a plant residue and reducing a volume of the plant residue under natural conditions satisfactorily and stably. The bacterium can be used for decomposing a plant residue and reducing a volume of the plant residue. A material containing cells of Bacillus pumilus KS-C4 strain (FERM BP-10842) that is capable of decomposing a plant residue and reducing a volume of the plant residue or a culture of the cell is added to a plant residue.

Abstract: To provide a composition with which a metal film can be directly produced from a high-valent metal compound, a method for producing a metal film, and a method for producing a metal powder. Using a composition for production of a metal film of copper, silver or indium, which comprises a high-valent compound of copper, silver or indium, a linear, branched or cyclic C1-18 alcohol and a Group VIII metal catalyst, a coating film is formed, followed by reduction by heating to produce a metal film of copper, silver or indium. Further, using metal particles of silver, copper of indium having a surface layer comprising a high-valent compound of copper, silver or indium, instead of the high-valent compound of copper, silver or indium, a metal film of copper, silver or indium is produced in the same manner as above.

Abstract: Disclosed is a novel filamentous fungus SD-F06 strain which can infect a root of a plant and grow symbiotically with the plant and is capable of controlling a soil-borne disease. Also disclosed is a material for controlling a soil-borne disease, which comprises a fungus body or fungal culture of a filamentous fungus SD-F06 strain. Further disclosed is a method for controlling a soil-borne disease in a plant by utilizing the material.

Abstract: Disclosed is a method for decomposing a plant residue and reducing a volume of the plant residue to a satisfactory level within a short period. Also disclosed is a bacterium for use in the method. Further disclosed is a material for decomposing a plant residue and reducing a volume of the plant residue, which contains the bacterium. A bacterium is found which is capable of decomposing a plant residue and reducing a volume of the plant residue under natural conditions satisfactorily and stably. The bacterium can be used for decomposing a plant residue and reducing a volume of the plant residue. A material containing cells of Bacillus pumilus KS-C4 strain (FERM BP-10842) that is capable of decomposing a plant residue and reducing a volume of the plant residue or a culture of the cell is added to a plant residue.

Abstract: A method of treating hardly decomposable harmful substance comprising (A) a step for adding coagulant into wastewater containing a hardly decomposable harmful substance, (B) a step for performing solid-liquid separation which separates a solid containing the hardly decomposable harmful substance from a liquid, and (C) a step for decomposing the hardly decomposable harmful substance by bringing peroxide into contact with the separated solid. Efficiently and safely treating the hardly decomposable harmful substances by means of low-cost facilities realizes.

Abstract: A method of treating hardly decomposable harmful substance comprising (A) a step for adding coagulant into wastewater containing a hardly decomposable harmful substance, (B) a step for performing solid-liquid separation which separates a solid containing the hardly decomposable harmful substance from a liquid, and (C) a step for decomposing the hardly decomposable harmful substance by bringing peroxide into contact with the separated solid. Efficiently and safely treating the hardly decomposable harmful substances by means of low-cost facilities realizes.

Abstract: In a semiconductor device having a semiconductor substrate, an internal electrode layer is formed on the semiconductor substrate. A barrier metal layer is formed on the internal electrode. An external electrode layer is formed on the barrier metal layer. A pad electrode is made of the internal electrode layer, the barrier metal layer, and the external electrode layer. A wire is electrically connected to the pad electrode. An area of the external electrode layer is set midway between an area of a polymerization portion of the wire on the pad electrode and a planar area of the barrier metal layer.

Abstract: In a semiconductor device having a semiconductor substrate, an internal electrode layer is formed on the semiconductor substrate. A barrier metal layer is formed on the internal electrode. An external electrode layer is formed on the barrier metal layer. A pad electrode is made of the internal electrode layer, the barrier metal layer, and the external electrode layer. A wire is electrically connected to the pad electrode. An area of the external electrode layer is set midway between an area of a polymerization portion of the wire on the pad electrode and a planar area of the barrier metal layer.

Abstract: The present invention relates to a yarn winding apparatus wherein a yarn is wound on a bobbin tube at a constant wind ratio. According to the present invention, the rotational speed of a winding spindle is electrically controlled in accordance with yarn tension and the rotational speed of a traverse element driving shaft is electrically controlled relative to the rotational speed of the winding spindle in such a manner that the wind ratio is kept constant.

Abstract: A high speed yarn feeding apparatus for feeding yarn from a yarn supply source to a yarn take-up apparatus is disclosed which is capable of being threaded by conventionally employed suction nozzles. The yarn feeding apparatus employs at least one stepped godet roller having a small diameter portion on which the travelling yarn is initially threaded. A yarn hooking means is provided on the peripheral surface of the stepped side of the large diameter portion of the stepped roller. Means is provided upstream of the stepped roller for shifting the travelling yarn from a position aligned with the small diameter portion to a position aligned with the large diameter portion of the stepped roller. The yarn hooking means can take various conformations and more than one hooking means can be provided on a single stepped godet roller.