Abstract: A pressing device includes a pressed unit, a pressing member, a support shaft, and a drive transmission mechanism. The pressed unit is supported to be rotatable. The pressing member presses the pressed unit. The support shaft supports the pressing member such that the pressing member is rotatable. The drive transmission mechanism transmits a drive force of a drive source to the pressed unit, is disposed on the pressing member, and includes a pressing-member-side drive transmission member to transmit the drive force to a unit drive transmission member of the pressed unit. The support shaft is disposed coaxially on a fulcrum of rotation of the pressed unit.

Abstract: Provided is a hologram recording medium that has high in-plane uniformity of a diffraction peak wavelength and can be peeled off from a release layer after exposure. The hologram recording medium includes a protective layer and a photosensitive layer. The initial maximum load on the protective layer measured in a tensile test is 3 N or more and 1000 N or less. The photosensitive layer contains a polymerizable compound and a polymerization initiator, and the polymerization initiator contains an electron-donating initiator and an electron-accepting initiator.

Abstract: Provided is a hologram recording medium that can achieve suppression of deterioration of the storage stability in an unexposed state. The hologram recording medium includes a base material and a photosensitive layer. The oxygen permeability of the base material measured in an environment at 23° C. and 0% RH is more than 0.1 cm3·(m2·day·atm)?1 and 10000 cm3·(m2·day·atm)?1 or less. The photosensitive layer contains a polymerizable compound, and the polymerizable compound contains a compound represented by a specific general formula.

Abstract: Line-edge roughness or line width roughness is evaluated while preventing influence of noise caused by a device or an environment. Therefore, an averaged signal profile 405 in which a moving average of S pixels (S is an integer greater than 1) is taken in a Y direction is obtained from a signal profile showing a secondary electron signal amount distribution in an X direction with respect to a predetermined Y coordinate obtained from a top-down image, an edge position 406 of a line pattern is extracted based on the averaged signal profile, and a noise floor height is calculated based on a first power spectral density 407 of LER data or LWR data based on the extracted edge position and a second power spectral density 409 of a rectangular window function corresponding to the moving average of the S pixels.

Abstract: To provide a charged particle beam image processing device in which a proper inspection region for an observation image that includes an edge of a line pattern can be set.

Abstract: A bonded body has a supporting substrate composed of silicon, a piezoelectric material substrate, and a bonding layer provided on a surface of the supporting substrate and composed of silicon oxide. The bonding layer has a refractive index of 1.468 or higher and 1.474 or lower.

Abstract: A method includes: forming an n-type diffusion layer as a second-conductivity-type semiconductor layer on a first-conductivity-type crystalline semiconductor substrate; and forming an anti-reflective film by a CVD method to extend from a light receiving surface side to a side surface of the semiconductor substrate, by placing the semiconductor substrate on a mount in a film forming chamber with a back surface brought into contact with the mount, evacuating and decompressing the film forming chamber, and supplying source gas into the film forming chamber. In the film formation, a tray has a through hole, and the anti-reflective film is formed on the surface of the semiconductor substrate excluding the contact surface by bringing the semiconductor substrate into close contact with the contact surface by causing the through hole to have a negative pressure relative to the pressure in the film forming chamber by the evacuation.

Abstract: A method includes: forming an n-type diffusion layer as a second-conductivity-type semiconductor layer on a first-conductivity-type crystalline semiconductor substrate; and forming an anti-reflective film by a CVD method to extend from a light receiving surface side to a side surface of the semiconductor substrate, by placing the semiconductor substrate on a mount in a film forming chamber with a back surface brought into contact with the mount, evacuating and decompressing the film forming chamber, and supplying source gas into the film forming chamber. In the film formation, a tray has a through hole, and the anti-reflective film is formed on the surface of the semiconductor substrate excluding the contact surface by bringing the semiconductor substrate into close contact with the contact surface by causing the through hole to have a negative pressure relative to the pressure in the film forming chamber by the evacuation.

Abstract: Line-edge roughness or line width roughness is evaluated while preventing influence of noise caused by a device or an environment. Therefore, an averaged signal profile 405 in which a moving average of S pixels (S is an integer greater than 1) is taken in a Y direction is obtained from a signal profile showing a secondary electron signal amount distribution in an X direction with respect to a predetermined Y coordinate obtained from a top-down image, an edge position 406 of a line pattern is extracted based on the averaged signal profile, and a noise floor height is calculated based on a first power spectral density 407 of LER data or LWR data based on the extracted edge position and a second power spectral density 409 of a rectangular window function corresponding to the moving average of the S pixels.

Abstract: A heat exchange element includes a stack of a plurality of flow passage plates each including a plurality of passage portions serving as flow passages, the passage portions being bonded to each other by an adhesive tape; and a gap adjustment unit having a thickness equal to or larger than a thickness of an adhesive tape and is configured to fill a gap between the flow passage plates.

Abstract: A heat exchange element includes a countercurrent portion including a plurality of partition plates each having a planar shape and a plurality of spacer plates each having a corrugated shape in cross section. The partition plates and spacer plates are alternately stacked such that corrugation directions of the spacer plates are aligned. A side surface of the countercurrent portion is formed by end portions defined by bending portions in each of which the partition plate and the spacer plate are overlaid. Since the heat exchange element according to the embodiment of the present disclosure is configured as described above, the heat insulation between flow paths of the heat exchange element and the outside air is improved, and heat exchange between fluid in the flow paths of the heat exchange element and the outside air is reduced. Consequently, the heat exchange element achieves improved heat exchange efficiency.

Abstract: A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.

Abstract: A semiconductor device production method includes forming a first recess portion in a first insulating film formed on a first substrate and a first conductive layer on the front surface of the first insulating film located inside and outside the first recess portion. In the first recess portion, a first pad is formed having a width of 3 ?m or less and including the first conductive layer by performing a first polishing the first conductive layer at a first polishing rate and, after the first polishing, a second polishing the first conductive layer at a second polishing rate lower than the first polishing rate. The first pad of the first substrate and a second pad of a second substrate are joined together by annealing the first substrate and the second substrate. The selection ratio of the first conductive layer to the first insulating film is 0.3 to 0.4.

Abstract: A method includes: forming an n-type diffusion layer as a second-conductivity-type semiconductor layer on a first-conductivity-type crystalline semiconductor substrate; and forming an anti-reflective film by a CVD method to extend from a light receiving surface side to a side surface of the semiconductor substrate, by placing the semiconductor substrate on a mount in a film forming chamber with a back surface brought into contact with the mount, evacuating and decompressing the film forming chamber, and supplying source gas into the film forming chamber. In the film formation, a tray has a through hole, and the anti-reflective film is formed on the surface of the semiconductor substrate excluding the contact surface by bringing the semiconductor substrate into close contact with the contact surface by causing the through hole to have a negative pressure relative to the pressure in the film forming chamber by the evacuation.

Abstract: A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.

Abstract: Object: To provide a seal ring capable of both reducing a friction loss and reducing oil leakage. Solving Means: The seal ring includes an inner circumferential surface, an outer circumferential surface, side surfaces, a plurality of pockets, and recess regions. The outer circumferential surface is opposed to the inner circumferential surface. The side surfaces are orthogonal to the inner circumferential surface and the outer circumferential surface. The plurality of pockets are provided, spaced apart from one another in at least one of the side surfaces. The recess regions are provided in the at least one of the side surfaces and includes a plurality of independent recesses. In this seal ring, it is possible to both reduce the friction loss and reduce the oil leakage due to a function of buffering oil by the recess region.

Abstract: An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

Abstract: A method for manufacturing a solar-power-generator substrate by cutting out a semiconductor substrate by slicing a semiconductor ingot and then by forming a texture structure on a surface of the semiconductor substrate by performing a surface treatment on the surface of the semiconductor substrate, includes: cleaning including cleaning and removing an organic impurity and a metal impurity adhering to the surface of the semiconductor substrate with a cleaning fluid containing an oxidizing chemical; and etching including removing a damaged layer on a substrate surface generated by the slicing and forming the texture structure on the surface of the semiconductor substrate by performing anisotropic etching on the surface of the semiconductor substrate with an alkaline aqueous solution, the etching being performed subsequent to the cleaning.

Abstract: Image processing apparatus includes: interpolation process image acquisition means for acquiring an interpolation process image of prescribed size which includes an interpolation point of an inputted image; Fourier transform means for subjecting the interpolation process image which is acquired with the interpolation process image acquisition means to Fourier transform; phase change means for changing, a phase of each value of the transformed interpolation process image which has been subjected to Fourier transform by the Fourier transform means, such that the interpolation point migrates to a desired nearby integer coordinate position; inverse Fourier transform means for subjecting the interpolation process image whose phase has been changed by the phase change means, to inverse Fourier transform; interpolation value determination means for adopting an interpolation point, a value of a pixel at the integer coordinate position, from the transformed interpolation process image subjected to inverse Fourier tran

Abstract: A method for manufacturing a solar-power-generator substrate by cutting out a semiconductor substrate by slicing a semiconductor ingot and then by forming a texture structure on a surface of the semiconductor substrate by performing a surface treatment on the surface of the semiconductor substrate, includes: cleaning including cleaning and removing an organic impurity and a metal impurity adhering to the surface of the semiconductor substrate with a cleaning fluid containing an oxidizing chemical; and etching including removing a damaged layer on a substrate surface generated by the slicing and forming the texture structure on the surface of the semiconductor substrate by performing anisotropic etching on the surface of the semiconductor substrate with an alkaline aqueous solution, the etching being performed subsequent to the cleaning.