Abstract: In an auxiliary heating part for performing a preheating treatment on a semiconductor wafer, VCSELs are arranged so as to surround LED lamps arranged in a circular region. The LED lamps irradiate the entire surface of the semiconductor wafer with light, and the VCSELs which emit light of relatively high directivity irradiate a peripheral portion of the semiconductor wafer where a temperature decrease is prone to occur with the light. A common power supply circuit is provided for the LED lamps and VCSELs that irradiate the peripheral portion of the semiconductor wafer with light. Increases in size and costs of power supply circuitry are suppressed because the single power supply circuit supplies power to the two different types of light sources to collectively control the two different types of light sources.

Abstract: Film information about a thin film formed on the front surface of a semiconductor wafer, substrate information about the semiconductor wafer, and an installation angle of an upper radiation thermometer are set and input. Emissivity of the front surface of the semiconductor wafer formed with a multilayer film is calculated based on the various kinds of information. Further, a weighted average efficiency of the emissivity of the front surface of the semiconductor wafer is determined based on a sensitivity distribution of the upper radiation thermometer. Front surface temperature of the semiconductor wafer at the time of heat treatment is measured using the determined weighted average efficiency of the emissivity. The emissivity is determined based on the film information and the like, so that the front surface temperature of the semiconductor wafer can be accurately measured even when thin films are formed in multiple layers.

Abstract: A flash lamp emits a flash of light to a front surface of a semiconductor wafer held in a chamber to heat the semiconductor wafer. A GCT thyristor is connected in parallel with the flash lamp. After a lapse of a predetermined time period since a current starts to flow through the flash lamp, the GCT thyristor enters an ON state. This allows a discharge current to flow through the GCT thyristor with a smaller impedance, and prevents any current from flowing through the flash lamp. Consequently, a tail current flowing through the flash lamp can be suppressed. Furthermore, reduction in a voltage charged into a capacitor can prevent the life of the flash lamp from being shortened.

Abstract: A temperature measurement method includes: a radiation temperature measurement step for detecting a brightness temperature of a semiconductor wafer from obliquely below the semiconductor wafer; an input parameter calculation step for calculating at least two input parameters from the brightness temperature detected in the radiation temperature measurement step, the at least two input parameters including a first input parameter corresponding to an emissivity ratio of the semiconductor wafer and a second input parameter corresponding to a temperature of the semiconductor wafer; an output parameter estimation step for estimating an output parameter from the first input parameter and the second input parameter; and a temperature calculation step for calculating the temperature of the semiconductor wafer from the output parameter estimated in the output parameter estimation step and the brightness temperature detected in the radiation temperature measurement step.

Abstract: Even a radiation thermometer using a quantum infrared sensor appropriately measures the temperature of a substrate irradiated with a flash of light. A heat treatment apparatus includes a quantum infrared sensor configured to measure a temperature of the first substrate and a temperature of the second substrate. The heat treatment apparatus further includes a temperature correction unit configured to correct, using a correction coefficient calculated based on the reference temperature and the shift temperature, a temperature of the second substrate on which second heat treatment having irradiation with the flash of light is performed, the temperature being measured by the quantum infrared sensor.

Abstract: An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

Abstract: A carrier containing a plurality of semiconductor wafers in a lot is transported into a heat treatment apparatus. Thereafter, a recipe specifying treatment procedures and treatment conditions is set for each of the semiconductor wafers. Next, a reflectance of each of the semiconductor wafers stored in the carrier is measured. Based on the set recipe and the measured reflectance of each semiconductor wafer, a predicted attainable temperature of each semiconductor wafer at the time of flash heating treatment is calculated, and the calculated predicted attainable temperature is displayed. This allows the setting of the treatment conditions with reference to the displayed predicted attainable temperature, to thereby easily achieve the setting of the heat treatment conditions.

Abstract: A front surface of a semiconductor wafer is rapidly heated by irradiation of a flash of light. Temperature of the front surface of the semiconductor wafer is measured at predetermined intervals after the irradiation of the flash of light, and is sequentially accumulated to acquire a temperature profile. From the temperature profile, an average value and a standard deviation are each calculated as a characteristic value. It is determined that the semiconductor wafer is cracked when an average value of the temperature profile deviates from the range of ±5? from a total average of temperature profiles of a plurality of semiconductor wafers or when a standard deviation of the temperature profile deviates from the range of 5? from the total average thereof of the plurality of semiconductor wafers.

Abstract: While a wafer having a front surface to which a thermocouple is attached is heated, a temperature of the front surface of the wafer is measured with the thermocouple and a temperature of a back surface thereof is measured with a back surface side radiation thermometer. Emissivity set to the back surface side radiation thermometer is corrected based on the temperature of the wafer measured with the thermocouple. Next, while the semiconductor wafer with a pattern on the front surface is heated, the temperature of the back surface and the temperature of the front surface of the semiconductor wafer are measured with the back surface side radiation thermometer and the front surface side radiation thermometer, respectively. Emissivity set to the front surface side radiation thermometer is corrected based on the temperature of the semiconductor wafer measured with the back surface side radiation thermometer.

Abstract: A front surface of a semiconductor wafer is rapidly heated by irradiation of a flash of light. Temperature of the front surface of the semiconductor wafer is measured at predetermined intervals after the irradiation of the flash of light, and is sequentially accumulated to acquire a temperature profile. From the temperature profile, an average value and a standard deviation are each calculated as a characteristic value. It is determined that the semiconductor wafer is cracked when an average value of the temperature profile deviates from the range of ±5? from a total average of temperature profiles of a plurality of semiconductor wafers or when a standard deviation of the temperature profile deviates from the range of 5? from the total average thereof of the plurality of semiconductor wafers.

Abstract: Film information about a thin film formed on the front surface of a semiconductor wafer, substrate information about the semiconductor wafer, and an installation angle of an upper radiation thermometer are set and input. Emissivity of the front surface of the semiconductor wafer formed with a multilayer film is calculated based on the various kinds of information. Further, a weighted average efficiency of the emissivity of the front surface of the semiconductor wafer is determined based on a sensitivity distribution of the upper radiation thermometer. Front surface temperature of the semiconductor wafer at the time of heat treatment is measured using the determined weighted average efficiency of the emissivity. The emissivity is determined based on the film information and the like, so that the front surface temperature of the semiconductor wafer can be accurately measured even when thin films are formed in multiple layers.

Abstract: A pyrometer holder is mounted to an outer wall of a chamber while holding a lower radiation thermometer. The front end of the lower radiation thermometer is brought into abutment with a mounting portion of the pyrometer holder, and a bottom plate is brought into abutment with the rear end of the lower radiation thermometer. A tension spring is tensioned between the bottom plate and the mounting portion to prevent the lower radiation thermometer from falling off or misregistration. An angle adjusting mechanism adjusts the angle of the radiation thermometer with respect to the outer wall of the chamber, with the front end of the radiation thermometer serving as a supporting point. Thus, the measurement position of the lower radiation thermometer is adjusted.

Abstract: A carrier containing a plurality of semiconductor wafers in a lot is transported into a heat treatment apparatus. Thereafter, a recipe specifying treatment procedures and treatment conditions is set for each of the semiconductor wafers. Next, a reflectance of each of the semiconductor wafers stored in the carrier is measured. Based on the set recipe and the measured reflectance of each semiconductor wafer, a predicted attainable temperature of each semiconductor wafer at the time of flash heating treatment is calculated, and the calculated predicted attainable temperature is displayed. This allows the setting of the treatment conditions with reference to the displayed predicted attainable temperature, to thereby easily achieve the setting of the heat treatment conditions.

Abstract: A semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon is warped along an axis, i.e., a diameter along a <100> direction of the semiconductor wafer when irradiated with a flash of light. The semiconductor wafer is placed on a susceptor while the direction of the semiconductor wafer is adjusted so that the diameter along the <100> direction coincides with an optical axis of an upper radiation thermometer. This adjustment makes a diameter along a direction in which a warp of the semiconductor wafer is smallest during irradiation with a flash of light coincide with the optical axis of the upper radiation thermometer. As a result, the semiconductor wafer is hardly warped along the optical axis direction of the upper radiation thermometer even during irradiation with a flash of light, thus hardly changing the emissivity of the semiconductor wafer, so that it is possible to accurately measure the temperature of an upper surface of the semiconductor wafer.

Abstract: A pyrometer holder is mounted to an outer wall of a chamber while holding a lower radiation thermometer. The front end of the lower radiation thermometer is brought into abutment with a mounting portion of the pyrometer holder, and a bottom plate is brought into abutment with the rear end of the lower radiation thermometer. A tension spring is tensioned between the bottom plate and the mounting portion to prevent the lower radiation thermometer from falling off or misregistration. An angle adjusting mechanism adjusts the angle of the radiation thermometer with respect to the outer wall of the chamber, with the front end of the radiation thermometer serving as a supporting point. Thus, the measurement position of the lower radiation thermometer is adjusted.

Abstract: A front surface of a semiconductor wafer is rapidly heated by irradiation of a flash of light. Temperature of the front surface of the semiconductor wafer is measured at predetermined intervals after the irradiation of the flash of light, and is sequentially accumulated to acquire a temperature profile. From the temperature profile, an average value and a standard deviation are each calculated as a characteristic value. It is determined that the semiconductor wafer is cracked when an average value of the temperature profile deviates from the range of ±5? from a total average of temperature profiles of a plurality of semiconductor wafers or when a standard deviation of the temperature profile deviates from the range of 5? from the total average thereof of the plurality of semiconductor wafers.

Abstract: A semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon is warped along an axis, i.e., a diameter along a <100> direction of the semiconductor wafer when irradiated with a flash of light. The semiconductor wafer is placed on a susceptor while the direction of the semiconductor wafer is adjusted so that the diameter along the <100> direction coincides with an optical axis of an upper radiation thermometer. This adjustment makes a diameter along a direction in which a warp of the semiconductor wafer is smallest during irradiation with a flash of light coincide with the optical axis of the upper radiation thermometer. As a result, the semiconductor wafer is hardly warped along the optical axis direction of the upper radiation thermometer even during irradiation with a flash of light, thus hardly changing the emissivity of the semiconductor wafer, so that it is possible to accurately measure the temperature of an upper surface of the semiconductor wafer.

Abstract: A semiconductor device whose insertion loss is reduced and isolation characteristics are improved in a high frequency band by reducing the capacitance component when an FET is off is provided. FETs (30a, 30b) having a gate electrode with a gate length of not more than 0.8 ?m are formed on a semiconductor substrate in which a buffer layer (24) having an impurity concentration of at least 1010 cm?3 and at most 1014 cm?3 is formed on a semi-insulating semiconductor (25) having at least 1014 cm?3 and at most 1016 cm?3 p-type or n-type impurities and an active layer (23) having a p-type or n-type impurity concentration of at least 1015 cm?3 and at most 1017 cm?3 is formed on the buffer layer.

Abstract: A semiconductor device whose insertion loss is reduced and isolation characteristics are improved in a high frequency band by reducing the capacitance component when an FET is off is provided. FETs (30a, 30b) having a gate electrode with a gate length of not more than 0.8 &mgr;m are formed on a semiconductor substrate in which a buffer layer (24) having an impurity concentration of at least 1010 cm−3 and at most 1014 cm−3 is formed on a semi-insulating semiconductor (25) having at least 1014 cm−3 and at most 1016 cm−3 p-type or n-type impurities and an active layer (23) having a p-type or n-type impurity concentration of at least 1015 cm−3 and at most 1017 cm−3 is formed on the buffer layer.