Abstract: A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using as a mask a resist pattern thus obtained, dry etching is carried out to form a microscopic pattern. Since the photoresist is highly immune against the dry etching, the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation enhanced more.

Abstract: In manufacturing a field effect transistor, a pattern which has a wider upper layer and a narrower lower layer is formed at a gate electrode position. Using the pattern as a mask, first and second impurity regions are formed on both the sides of a gate region by ion implantation. Subsequently, at least the lower layer is buried in a material, such as an organic high polymer material, having a selectivity in etching characteristics with respect to the pattern material. After removing the lower layer, an electrode material is embedded in the resulting hole so as to form a gate electrode.

Abstract: A photosensitive composition turning shicky by light exposure, which comprises a salt or p-aminobenzenediazonium compound and at least one of salts of o- and m-aminobenzenediazonium compounds, has a distinguished effect in forming a phosphor screen of a color picture tube.

Abstract: Disclosed is a pattern formation method comprising exposing a photosensitive composition comprising a bisazide compound represented by the following general formula: ##STR1## wherein A stands for an atom or atomic group selected from O, S, CH.sub.2, CH.sub.2 CH.sub.2, SO.sub.2 and S.sub.2, X stands for an atom or atomic group selected from H and N.sub.3, and when X is H, Z is a group of N.sub.3 and when X is N.sub.3, Z is an atom of H or Cl, and a polymeric compound to deep UV rays, to form fine patterns.

Abstract: A radiation-sensitive composition comprising an iodine-containing azide compound at least a part of which can be fixed substantially in a polymer by exposure to a radiation and a polymer, or a radiation-sensitive composition comprising an azide compound, an iodine compound at least a part of which can be fixed substantially in a polymer by exposure to a radiation and a polymer. This composition can be subjected to the dry development with oxygen plasma after the exposure followed by heating.

Abstract: A photosensitive composition improved in sensitivity by adding a salt of a compound represented by the general formula: ##STR1## (wherein R.sub.1 and R.sub.2 each represents a straight chain alkyl group, and X, Y and Z each represents H, a straight chain alkyl group or an alkoxy group, but two or more of X, Y and Z can not be H at the same time) to an aromatic diazonium salt which gets sticky upon exposure to light.

Abstract: A photosensitive composition improved in sensitivity by adding a salt of a compound represented by the general formula: ##STR1## (wherein R.sub.1 and R.sub.2 each represents a straight chain alkyl group, and X, Y and Z each represents H, a straight chain alkyl group or an alkoxy group, but two or more of X, Y and Z can not be H at the same time) to an aromatic diazonium salt which gets sticky upon exposure to light.

Abstract: This invention relates to light sensitive photoresist materials which are used in the photo-engraving process or in the production of the phosphor screens of color picture tubes. The light sensitive photoresist materials of this invention are novel, water-soluble azide materials.

Abstract: The present invention relates to a novel light sensitive photoresist composition which is used for the photo-engraving process or for production of phosphor screen of color picture tubes. The light sensitive photoresist composition of the present invention comprises a novel water-soluble aromatic azide compound and a photo-crosslinkable water-soluble polymer.

Abstract: The present invention affords a process for forming a pattern having a surface area substantially equal to or smaller than area of apertures of shadow-mask through which beams pass on a photoresist film, which contains an acrylamidediacetoneacrylamide copolymer and a water-soluble aromatic bisazide compound, by exposing said photoresist film to light through a mask having the pattern and then developing the film.The use of said photoresist film for the preparation of a phosphor screen of a color picture tube of a black matrix or black stripe type does not require a special technique such as post-etching of a shadow mask and makes it possible to form a three primary color phosphor pattern having a surface area substantially equal to or smaller than the area of apertures of the shadow mask through which lightbeams pass, without mutual "bridging" between phosphor dots. Thus, an excellent phosphor screen of a color picture tube of a black matrix or black stripe type can be prepared.