Abstract: An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.

Abstract: A radiation imaging apparatus includes a sensor substrate having a plurality of imaging pixels used to capture a radiation image and a detection pixel used to detect radiation; and a housing which accommodates the sensor substrate, wherein the sensor substrate includes an arrangement prohibited region including a stress concentration portion where a stress concentrates due to deformation of the housing, and the detection pixel is arranged in a region different from the arrangement prohibited region.

Abstract: A radiation imaging apparatus includes a sensor substrate having a plurality of imaging pixels used to capture a radiation image and a detection pixel used to detect radiation; and a housing which accommodates the sensor substrate, wherein the sensor substrate includes an arrangement prohibited region including a stress concentration portion where a stress concentrates due to deformation of the housing, and the detection pixel is arranged in a region different from the arrangement prohibited region.

Abstract: An imaging device includes a pixel electrode, a counter electrode facing the pixel electrode, and a photoelectric conversion layer located between the pixel electrode and the counter electrode. The counter electrode includes a first transparent electrode, a second transparent electrode, and an intermediate layer located between the first transparent electrode and the second transparent electrode. A material of the intermediate layer is different from a material of the first transparent electrode and different from a material of the second transparent electrode. The photoelectric conversion layer, the first transparent electrode, the intermediate layer, and the second transparent electrode are arranged in this order. The intermediate layer contains an insulating material as a major ingredient.

Abstract: A semiconductor device includes: a first capacitor element that includes a first electrode, a second electrode, and a dielectric layer positioned between the first electrode and the second electrode; and a second capacitor element that includes a third electrode and an insulating layer positioned between the second electrode and the third electrode. The first capacitor element includes at least one first trench portion.

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

Abstract: An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.

Abstract: The radiation imaging system includes a cable configured to transmit at least one of a signal and power from an external apparatus, a connector portion provided in an end of the cable, a radiation imaging apparatus, and an imaging table, the radiation imaging apparatus being attachable to and removable from the imaging table, wherein the radiation imaging apparatus includes a rectangular-shaped housing configured to contain a radiation detecting panel, a housing-side connection terminal portion is arranged in a side surface of the housing, the housing-side connection terminal portion is capable to be connected with the connector portion, and the connector portion includes at least one penetrating hole penetrating from a front surface parallel to a radiation incident surface to a rear surface opposite to the front surface, the penetrating hole being usable for fixation to the imaging table.

Abstract: A radiation imaging apparatus includes a sensor substrate having a plurality of imaging pixels used to capture a radiation image and a detection pixel used to detect radiation; and a housing which accommodates the sensor substrate, wherein the sensor substrate includes an arrangement prohibited region including a stress concentration portion where a stress concentrates due to deformation of the housing, and the detection pixel is arranged in a region different from the arrangement prohibited region.

Abstract: A radiographic apparatus includes a radiation detection panel configured to detect radiation, and a housing that covers the radiation detection panel. The housing includes an incident surface receiving the radiation, a side surface adjacent to the incident surface, a rear surface opposing the incident surface, and an inclined surface adjacent to each of the side surface and the rear surface. A recessed handle portion is provided on the inclined surface.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode and converts light to charge, and an electron blocking layer that is arranged between the first electrode and the photoelectric conversion layer and suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of nickel. The carbon concentration in the electron blocking layer is 0.1 atom % or more and 1.3 atom % or less.

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode, and an electron blocking layer that suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of chromium and is arranged between the first electrode and the photoelectric conversion layer.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer contains at least one element selected from the group consisting of nitrogen and silicon.

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.

Abstract: An accommodation apparatus that accommodates a radiation imaging apparatus, the accommodation apparatus comprising: an accommodation unit including a bottom surface, a first wall surface adjacent to the bottom surface, and a second wall surface adjacent to the bottom surface and provided at a position facing the first wall surface, wherein the length in a horizontal direction of the first wall surface adjacent to the bottom surface and the length in the horizontal direction of the second wall surface adjacent to the bottom surface are different.