Patents by Inventor Takahiro Kozawa
Takahiro Kozawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20210202947Abstract: A method for producing a positive electrode active material is provided. The method can prevent a gas generation due to an oxidative degradation of a non-aqueous electrolyte in a lithium-ion secondary battery using a positive electrode active material which operates at a high potential. A method for producing a coated positive electrode active material for a lithium-ion secondary battery includes coating a surface of a positive electrode active material with an oxide-based solid electrolyte by a mechanical coating method and then conducting heat treatment at 300° C. or higher, and the positive electrode active material has an average potential of extraction and insertion of lithium of 4.5V or more and 5.0V or less based on Li+/Li.Type: ApplicationFiled: March 5, 2021Publication date: July 1, 2021Applicants: KANEKA CORPORATION, OSAKA UNIVERSITYInventors: Takashi Kikuchi, Kohei Ogawa, Kazuaki Kanai, Makio Naito, Takahiro Kozawa
-
Patent number: 10896831Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.Type: GrantFiled: August 31, 2018Date of Patent: January 19, 2021Assignees: NuFlare Technology, Inc., Showa Denko K.K., Central Research Institute of Electric Power IndustryInventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
-
Patent number: 10262863Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.Type: GrantFiled: December 8, 2015Date of Patent: April 16, 2019Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power IndustryInventors: Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideyuki Uehigashi, Hiroaki Fujibayashi, Masami Naito, Kazukuni Hara, Takahiro Kozawa, Hirofumi Aoki
-
Publication number: 20180374721Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.Type: ApplicationFiled: August 31, 2018Publication date: December 27, 2018Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
-
Publication number: 20170345658Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.Type: ApplicationFiled: December 8, 2015Publication date: November 30, 2017Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power IndustryInventors: Keisuke FUKADA, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Masami NAITO, Kazukuni HARA, Takahiro KOZAWA, Hirofumi AOKI
-
Patent number: 9184044Abstract: A method for manufacturing a semiconductor device is provided with filling a trench by supplying trichlorosilane gas to a substrate where the trench is formed. A relation between a gas concentration of trichlorosilane gas and a film formation speed includes a concentration countergradient condition in which the film formation speed decreases as the gas concentration increases. The filling of the trench is performed under the concentration countergradient condition.Type: GrantFiled: April 29, 2015Date of Patent: November 10, 2015Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takayuki Koyama, Takanori Yamamoto, Kenji Nakashima, Takahiro Kozawa
-
Patent number: 8956458Abstract: A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.Type: GrantFiled: August 31, 2011Date of Patent: February 17, 2015Assignee: Toyota Jidosha Kabushiki KaishaInventors: Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun, Takahiro Ito
-
Patent number: 8703590Abstract: A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 ?mol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.Type: GrantFiled: December 8, 2010Date of Patent: April 22, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Takahiro Ito, Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun
-
Publication number: 20140038395Abstract: A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.Type: ApplicationFiled: August 31, 2011Publication date: February 6, 2014Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun, Takahiro Ito
-
Publication number: 20130040441Abstract: A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 ?mol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.Type: ApplicationFiled: December 8, 2010Publication date: February 14, 2013Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takahiro Ito, Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun
-
Patent number: 7897987Abstract: A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.Type: GrantFiled: March 6, 2009Date of Patent: March 1, 2011Assignee: Toyoda Gosei Co., Ltd.Inventors: Mitsuhiro Inoue, Kenji Ito, Kazuyohi Tomita, Tetsu Kachi, Takahiro Kozawa, Satoru Kato, Tadashi Ichikawa
-
Patent number: 7646036Abstract: An object of the invention is to prevent migration of silver contained in an electrode of a Group III nitride-based compound semiconductor light-emitting device. A positive electrode is formed on a p-type layer. In the positive electrode, an ITO light-transmitting electrode layer, a silver alloy reflecting electrode layer, a diffusion-preventing layer in which a Ti layer and a Pt layer are stacked, and a gold thick-film electrode are sequentially stacked on the p-type layer. The reflecting electrode layer made of a silver alloy contains palladium (Pd) and copper (Cu) as additives and also contains oxygen (O). By virtue of this structure, migration of silver from the silver alloy reflecting electrode layer and blackening of the interface between the silver alloy layer and the ITO light-transmitting electrode layer disposed thereunder are prevented, whereby light extraction efficiency can be enhanced.Type: GrantFiled: February 4, 2008Date of Patent: January 12, 2010Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Toyoda Gosei Co., Ltd.Inventors: Takahiro Kozawa, Kazuyoshi Tomita, Toshiya Uemura, Shigemi Horiuchi
-
Publication number: 20090242917Abstract: A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.Type: ApplicationFiled: March 6, 2009Publication date: October 1, 2009Applicant: TOYODA GOSEI CO., LTD.Inventors: Mitsuhiro Inoue, Kenji Ito, Kazuyohi Tomita, Tetsu Kachi, Takahiro Kozawa, Satoru Kato, Tadashi Ichikawa
-
Publication number: 20080185609Abstract: An object of the invention is to prevent migration of silver contained in an electrode of a Group III nitride-based compound semiconductor light-emitting device. An n-type AlxGayIn1-x-yN layer, a light-emitting layer, and a p-type AlxGayIn1-x-yN layer are formed on a dielectric substrate such as a sapphire substrate. After formation of these layers, the n-type AlxGayIn1-x-yN layer is exposed through etching or a similar technique, and an n-electrode is formed on the exposed area. A positive electrode is formed on the p-type layer. In the positive electrode, an ITO light-transmitting electrode layer, a silver alloy reflecting electrode layer, a diffusion-preventing layer in which a Ti layer and a Pt layer are stacked, and a gold thick-film electrode are sequentially stacked on the p-type layer. The reflecting electrode layer made of a silver alloy contains palladium (Pd) and copper (Cu) as additives and also contains oxygen (O).Type: ApplicationFiled: February 4, 2008Publication date: August 7, 2008Applicants: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, TOYODA GOSEI CO., LTD.Inventors: Takahiro KOZAWA, Kazuyoshi TOMITA, Toshiya UEMURA, Shigemi HORIUCHI
-
Patent number: 7247884Abstract: A photo-excited semiconductor layer smaller in band gap energy than a light-emitting layer made of a Group III nitride compound semiconductor is provided between a substrate and the light-emitting layer. The photo-excited semiconductor layer is excited by the light emitted from the light-emitting layer to thereby emit light at a wavelength longer than that of the light emitted from the light-emitting layer.Type: GrantFiled: June 7, 2002Date of Patent: July 24, 2007Assignee: Toyoda Gosei Co., Ltd.Inventors: Naoki Shibata, Takahiro Kozawa
-
Publication number: 20060273324Abstract: The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 ?m and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.Type: ApplicationFiled: July 26, 2004Publication date: December 7, 2006Inventors: Makoto Asai, Shiro Yamazaki, Takahiro Kozawa, Mitsuhisa Narukawa
-
Patent number: 6891203Abstract: According to the invention, a Group III nitride compound semiconductor light-emitting element is provided with a light-emitting layer comprising two layers of different in ratio of AlGaInN composition, and emitting light with an emission peak wavelength in an ultraviolet region and light with an emission peak wavelength in a visible region. The light-emitting element and a fluorescent material excited by light in the ultraviolet region are combined to configure a light emitting device.Type: GrantFiled: January 4, 2002Date of Patent: May 10, 2005Assignee: Toyoda Gosei Co., Ltd.Inventors: Takahiro Kozawa, Naoki Shibata
-
Patent number: 6864502Abstract: A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of AlX1GaY1In1-X1-Y1N, where 0<X1, 0?Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1-X2-Y2N, where 0<X2, 0?Y2 and X2+Y2<1. The Al composition (X2) of barrier layer is equal to or smaller than that (X1) of well layer.Type: GrantFiled: September 17, 2003Date of Patent: March 8, 2005Assignee: Toyoda Gosei Co., Ltd.Inventors: Naoki Shibata, Takahiro Kozawa
-
Publication number: 20040169186Abstract: A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of AlX1GaY1In1−X1−Y1N, where 0<X1, 0≦Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1−X2−Y2N, where 0<X2, 0≦Y2 and X2+Y2<1. The Al composition (X2) of barrier layer is equal to or smaller than that (X1) of well layer.Type: ApplicationFiled: September 17, 2003Publication date: September 2, 2004Applicant: Toyoda Gosei Co., Ltd.Inventors: Naoki Shibata, Takahiro Kozawa
-
Publication number: 20040061115Abstract: According to the invention, a Group III nitride compound semiconductor light-emitting element is provided with a light-emitting layer comprising two layers of different in ratio of AlGaInN composition, and emitting light with an emission peak wavelength in an ultraviolet region and light with an emission peak wavelength in a visible region. The light-emitting element and a fluorescent material excited by light in the ultraviolet region are combined to configure a light emitting device.Type: ApplicationFiled: July 9, 2003Publication date: April 1, 2004Inventors: Takahiro Kozawa, Naoki Shibata