Abstract: A plurality of optimized diode chips are connected in series with each other to provide a high-voltage silicon diode rectifying device. Each chip has an improved withstand voltage and inverse surge resistance which improves the overall usefulness and efficiency of high-voltage silicon diodes. This invention also reduces costs by requiring fewer individual diode chips. The specific resistance of the (n)-type silicon substrate is in a critical range of between 20 to 50 &OHgr;cm. The diffusion depth of the p+ anode layer is in a critical range of between 30 to 200 &mgr;m. The thickness of the n− base layer is 0.54×(&rgr;·Vsr)½ or greater. In another embodiment, the specific resistance of the silicon substrate is in the range of 32 to 40 &OHgr;cm, and diffusion depth of the p+ anode layer is in the range of 70 to 200 &mgr;m. In yet another embodiment, a cathode layer is diffused on the semiconductor base material.