Abstract: A method for forming a conducting metal layer on an inorganic substrate is to heat the inorganic substrate accommodated in a vacuum vessel of sputtering device in which a high degree of vacuum is attained, to lead into the vacuum vessel a discharge gas as regulated to be at a predetermined pressure, to apply a high frequency power with the inorganic substrate made as a target, to interrupt the power to regulate the discharge gas to be at a predetermined pressure relatively low, and to apply DC power with a conductive metal member made as a target for thereby forming the conducting metal layer on the inorganic substrate. The metal layer formation on the inorganic substrate is thereby simplified enough for improving the producibility in industrial scale and is still capable of attaining a satisfactory bonding strength between the metal layer and the substrate.

Abstract: A method and apparatus for forming a metallic sheet having a concave-convex profile by chemical vapor deposition utilizes a die having a profiled surface defined by a number of spaced protrusions. The method comprises covering at least a portion of the profiled surface with a mask of transparent material in such a way that the mask comes into a closely adjacent relation to the top faces of the protrusions, feeding at a reaction gas of a metallic compound to a restricted space defined between the mask and the profiled surface, radiating a light beam through the transparent mask onto the profiled surface in order to decompose the reaction gas and deposit on the profiled surface a metallic layer, and removing the resulting deposited metallic layer from the profiled surface to obtain a metallic sheet having a concave-convex profile corresponding to the profiled surface of the die.