Patents by Inventor Takahiro Nakauchi

Takahiro Nakauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Static random access memory
    Patent number: 7057302
    Abstract: A static random access memory has first and second complementary field-effect transistors. The first complementary field-effect transistor includes a semiconductor substrate, a first field-effect transistor of electron conduction type which has a first drain region constituting a Schottky junction and a gate electrode, and a first field-effect transistor of positive hole conduction type which shares the first drain region and has a shared gate electrode. The second complementary field-effect transistor includes a second field-effect transistor of electron conduction type which has a second drain region and a gate electrode, a second field-effect transistor of positive hole conduction type which shares the second drain region and has a shared gate electrode.
    Type: Grant
    Filed: August 3, 2004
    Date of Patent: June 6, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuya Matsuzawa, Ken Uchida, Takahiro Nakauchi
  • Static random access memory
    Publication number: 20050062071
    Abstract: A static random access memory has first and second complementary field-effect transistors. The first complementary field-effect transistor includes a semiconductor substrate, a first field-effect transistor of electron conduction type which has a first drain region constituting a Schottky junction and a gate electrode, and a first field-effect transistor of positive hole conduction type which shares the first drain region and has a shared gate electrode. The second complementary field-effect transistor includes a second field-effect transistor of electron conduction type which has a second drain region and a gate electrode, a second field-effect transistor of positive hole conduction type which shares the second drain region and has a shared gate electrode.
    Type: Application
    Filed: August 3, 2004
    Publication date: March 24, 2005
    Inventors: Kazuya Matsuzawa, Ken Uchida, Takahiro Nakauchi