Abstract: In a joint apparatus, a transfer region and a processing region are formed. In the transfer region, a transfer mechanism transferring a first substrate, a second substrate, or a superposed substrate, a position adjusting mechanism adjusting an orientation in a horizontal direction of the first substrate or the second substrate, and a reversing mechanism reversing front and rear surfaces of the second substrate are provided. In the processing region, a first holding member mounting and holding the first substrate on an upper surface thereof, a second holding member holding the second substrate on a lower surface thereof, and a pressing and moving member bringing one end portion of the first substrate and one end portion of the second substrate into abutment with each other and pressing the one end portions when joining the first substrate and the second substrate together are provided.

Abstract: A joint system includes: a transfer-in/out station capable of holding a plurality of substrates or a plurality of superposed substrates, and transferring-in/out the substrates or superposed substrates to/from a processing station; and the processing station performing predetermined processing on the substrates and joining the substrates together. The processing station includes: a surface activation apparatus activating a front surface of the substrate; a surface hydrophilizing apparatus hydrophilizing and cleaning the front surface of the substrate; a joint apparatus joining the substrates together; and a transfer region for transferring the substrate or superposed substrate to the surface activation apparatus, the surface hydrophilizing apparatus, and the joint apparatus.

Abstract: A joint system includes: a transfer-in/out station capable of holding a plurality of substrates or a plurality of superposed substrates, and transferring-in/out the substrates or superposed substrates to/from a processing station; and the processing station performing predetermined processing on the substrates and joining the substrates together. The processing station includes: a surface activation apparatus activating a front surface of the substrate; a surface hydrophilizing apparatus hydrophilizing and cleaning the front surface of the substrate; a joint apparatus joining the substrates together; and a transfer region for transferring the substrate or superposed substrate to the surface activation apparatus, the surface hydrophilizing apparatus, and the joint apparatus.

Abstract: In a joint apparatus, a transfer region and a processing region are formed. In the transfer region, a transfer mechanism transferring a first substrate, a second substrate, or a superposed substrate, a position adjusting mechanism adjusting an orientation in a horizontal direction of the first substrate or the second substrate, and a reversing mechanism reversing front and rear surfaces of the second substrate are provided. In the processing region, a first holding member mounting and holding the first substrate on an upper surface thereof, a second holding member holding the second substrate on a lower surface thereof, and a pressing and moving member bringing one end portion of the first substrate and one end portion of the second substrate into abutment with each other and pressing the one end portions when joining the first substrate and the second substrate together are provided.

Abstract: An SOD system (100A) comprises a process block (8) for performing a prescribed processing so as to form an insulating film on a wafer W, a carrier block (7) for transferring the wafer W from the outside into the process block (8), a sub-transfer mechanism (12) for transferring the substrate W between the process block (8) and the carrier block (7), and a main transfer mechanism (15). A process tower (T1) prepared by stacking one upon the other a plurality of process units for performing a series of processing for forming an insulating film on the wafer W is arranged detachable from the process block (8).

Abstract: An SOD system (100A) comprises a process block (8) for performing a prescribed processing so as to form an insulating film on a wafer W, a carrier block (7) for transferring the wafer W from the outside into the process block (8), a sub-transfer mechanism (12) for transferring the substrate W between the process block (8) and the carrier block (7), and a main transfer mechanism (15). A process tower (T1) prepared by stacking one upon the other a plurality of process units for performing a series of processing for forming an insulating film on the wafer W is arranged detachable from the process block (8).

Abstract: Coating an insulating film on a substrate, heating the substrate at a pressure higher than an atmospheric pressure in a chamber, followed by the curing process performed at a pressure lower than the atmospheric pressure in a separate chamber. With this process, the desorption of the porogen from the insulating film during heating can be restrained therefore an insulating film of high quality can be formed.

Abstract: Coating an insulating film on a substrate, heating the substrate at a pressure higher than an atmospheric pressure in a chamber, followed by the curing process performed at a pressure lower than the atmospheric pressure in a separate chamber. With this process, the desorption of the porogen from the insulating film during heating can be restrained therefore an insulating film of high quality can be formed.

Abstract: Coating an insulating film on a substrate, heating the substrate at a pressure higher than an atmospheric pressure in a chamber, followed by the curing process performed at a pressure lower than the atmospheric pressure in a separate chamber. With this process, the desorption of the porogen from the insulating film during heating can be restrained therefore an insulating film of high quality can be formed.