Abstract: A piezoelectric device includes a conductive adhesive, a container, and an AT-cut crystal element. The AT-cut crystal element has at least one side surface intersecting with a Z?-axis of the crystallographic axis of the crystal constituted of three surfaces. When a dimension of a straight-line portion along the Z?-axis of a second side opposed to the first side is expressed as W1 and a dimension along the Z?-axis of the AT-cut crystal element is expressed as W0, W1/W0 is 0.91 or greater, and the straight-line portion has both sides constituting corner portions in approximately right angles with sides along an X-axis of the crystal of the AT-cut crystal element. The side of the first side is at a ?X-side in an X-axis of the crystallographic axis of the crystal and a side of the second side is at a +X-side in the X-axis.

Abstract: A crystal unit includes a crystal element, excitation electrodes, and a container. The crystal element vibrates in a thickness-shear mode. The excitation electrodes are disposed on front and back surfaces of the crystal element. The crystal element is mounted to the container. The excitation electrodes are disposed on the crystal element. When a thickness of the crystal element is expressed as T, and a total thickness of the excitation electrodes disposed on the front and back surfaces of the crystal element is expressed as t, a ratio t/T is from 0.026 to 0.030.

Abstract: A piezoelectric device includes a conductive adhesive, a container, and an AT-cut crystal element. The AT-cut crystal element has at least one side surface intersecting with a Z?-axis of the crystallographic axis of the crystal constituted of three surfaces. When a dimension of a straight-line portion along the Z?-axis of a second side opposed to the first side is expressed as W1 and a dimension along the Z?-axis of the AT-cut crystal element is expressed as W0, W1/W0 is 0.91 or greater, and the straight-line portion has both sides constituting corner portions in approximately right angles with sides along an X-axis of the crystal of the AT-cut crystal element. The side of the first side is at a ?X-side in an X-axis of the crystallographic axis of the crystal and a side of the second side is at a +X-side in the X-axis.

Abstract: A frequency adjustment method is provided for a piezoelectric resonator including a first vibrator, a second vibrator, a third vibrator, and a supporting portion. The second and the third vibrators connect to ends positioned along a vibration direction of a width-longitudinal mode in the first vibrator. The supporting portion is connected to two ends positioned along a vibration direction of the length-longitudinal mode in the first vibrator. The method includes: setting the second vibrator to a first region, a second region, and a third region along the vibration direction of the width-longitudinal mode; setting the third vibrator to a first region, a second region, and a third region along the vibration direction of the width-longitudinal mode; and performing the frequency adjustment by reducing or adding mass of at least one of the first region and the third region in each of the second vibrator and the third vibrator.

Abstract: A resonator includes a ring-shaped or disk-shaped resonator main body, a supporting joist, and a securing portion. The supporting joist extends from the resonator main body to support the resonator main body. The securing portion is formed at a distal end of the supporting joist and the securing portion is secured to a base material. The securing portion includes a first rod-shaped portion and a second rod-shaped portion. The first rod-shaped portion is formed in a first direction. The second rod-shaped portion is formed in a second direction different from the first direction.

Abstract: A manufacturing method produces an angular velocity sensor element easily with a high degree of accuracy. The manufacturing method includes forming a number of tuning fork shaped crystal elements on a single crystal wafer by a photo-etching technique, the crystal elements having protrusion ridge line sections in the lengthwise direction of +X faces of the crystal, caused by etching anisotropy. A step is included for forming a metallic film on each side face including both principal planes and said +X face of said tuning fork shaped crystal element of the single crystal wafer. The method also includes dividing the metallic film of the +X face along the protrusion ridge line section and forming first and second sensor electrodes.

Abstract: The present invention provides an angular velocity sensor element that can be produced easily with a high degree of accuracy, and a manufacturing method thereof. In the angular velocity sensor element of the present invention, the lengthwise direction of a tuning fork shaped crystal element is a Y axis of a crystal axis, the widthwise direction is an X axis and the depthwise direction is a Z axis, and mutually electrically separated first and second sensor electrodes for angular velocity detection are provided on at least one face among side faces of the tuning fork arm.

Abstract: The present invention provides an angular velocity sensor element that can be produced easily with a high degree of accuracy, and a manufacturing method thereof. In the angular velocity sensor element of the present invention, the lengthwise direction of a tuning fork shaped crystal element is a Y axis of a crystal axis, the widthwise direction is an X axis and the depthwise direction is a Z axis, and mutually electrically separated first and second sensor electrodes for angular velocity detection are provided on at least one face among side faces of the tuning fork arm.

Abstract: The present invention provides an angular velocity sensor element that can be produced easily with a high degree of accuracy, and a manufacturing method thereof. In the angular velocity sensor element of the present invention, the lengthwise direction of a tuning fork shaped crystal element is a Y axis of a crystal axis, the widthwise direction is an X axis and the depthwise direction is a Z axis, and mutually electrically separated first and second sensor electrodes for angular velocity detection are provided on at least one face among side faces of the tuning fork arm.

Abstract: A speech segment to be analyzed is cut out with a window having a length of a plurality of pitch periods for RK model voicing source parameter estimation. GCIs are all estimated for a plurality of voicing source pulses. Based on such estimations, an RK model voicing source waveform is generated, its relationship with the speech segment is analyzed by ARX system identification, and then a glottal transform function is estimated. While this process repeated, when GCIs converge at a predetermined value, the identification is completed. Accordingly, a high quality analysis-synthesis system, which isolates voicing source parameters of speech signals from vocal tract parameters thereof with high accuracy, can be realized.

Abstract: An output timer includes a capture register for capturing a count value held by a free running up-counter in coorporation with a transmission gate in response to an event signal applied to the output timer. An adder adds a first value stored in another register to the count value captured by the capture register and produces a sum. A comparator compares a count value held by the free running up-counter with the sum and outputs a coincidence signal when the count value and sum are equal to each other. A set-reset flip-flop includes a set terminal for receiving the event signal and a reset terminal connected to the output terminal of the comparator.

Abstract: A semiconductor memory apparatus capable of judging whether or not there is short circuit between bit lines 1 (word lines) by respectively connecting a plurality of the bit lines 1 (word lines), wired in parallel to each other so as to select memory cell for outputting data from a memory cell array 4 in which memory cells are arranged in the form of matrix, connected to power source potential line 14 and ground potential line 16 alternately through switching elements 5, 6 respectively, thereby measuring leak current flowing between the both lines 14 and 16 in the state where the switching elements 5, 6 are ON, a testing apparatus being provided with a power source 10 supplying to each of the switching elements 5, 6 of this semiconductor memory apparatus and with an ampere meter 11 for measuring leak current, and relieving method for the semiconductor memory apparatus from short circuit between the bit lines (word lines) by making the switching elements 5, 6 ON as well as applying overvoltage to the bit lines