Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k > ?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k < ?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device, having high resistance to an etching gas used for etching an absorber film and/or an etching mask film and capable of suppressing occurrence of blister. A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 formed on the substrate 10, and a protective film 14 formed on the multilayer reflective film 12. The protective film 14 comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf).

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: Provided is a substrate with multilayer reflective film used to manufacture a reflective mask having a multilayer reflective film having high reflectance with respect to exposure light and little film stress. The substrate with multilayer reflective film is provided with a multilayer reflective film for reflecting exposure light, the substrate with multilayer reflective film comprising a multilayer film obtained by building up an alternating stack of low refractive index layers and high refractive index layers on a substrate, and the multilayer reflective film contains krypton (Kr).

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: Provided is a substrate with multilayer reflective film used to manufacture a reflective mask having a multilayer reflective film having high reflectance with respect to exposure light and little film stress. The substrate with multilayer reflective film is provided with a multilayer reflective film for reflecting exposure light, the substrate with multilayer reflective film comprising a multilayer film obtained by building up an alternating stack of low refractive index layers and high refractive index layers on a substrate, and the multilayer reflective film contains krypton (Kr).

Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.

Abstract: A reflective mask blank which is able to produce a reflective mask that is capable of forming a fine and highly accurate transfer pattern by further reducing the shadowing effects of the reflective mask. A reflective mask blank which sequentially comprises, on a substrate, a multilayer reflective film and an absorbent film in this order, and which is characterized in that the absorbent film is formed from a material that contains a first material which has a refractive index n of 0.99 or more for EUV light and a second material which has an extinction coefficient k of 0.035 or more for EUV light.

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.

Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.

Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.

Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase- shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.