Patents by Inventor Takahiro Onoue

Takahiro Onoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200371421
    Abstract: A reflective mask blank which is able to produce a reflective mask that is capable of forming a fine and highly accurate transfer pattern by further reducing the shadowing effects of the reflective mask. A reflective mask blank which sequentially comprises, on a substrate, a multilayer reflective film and an absorbent film in this order, and which is characterized in that the absorbent film is formed from a material that contains a first material which has a refractive index n of 0.99 or more for EUV light and a second material which has an extinction coefficient k of 0.035 or more for EUV light.
    Type: Application
    Filed: November 21, 2018
    Publication date: November 26, 2020
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Takahiro ONOUE
  • Publication number: 20190384157
    Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
    Type: Application
    Filed: March 1, 2018
    Publication date: December 19, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Junichi HORIKAWA, Takahiro ONOUE, Mizuki KATAOKA
  • Publication number: 20190384158
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Application
    Filed: February 20, 2018
    Publication date: December 19, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI, Takahiro ONOUE, Hirofumi KOZAKAI
  • Patent number: 10481484
    Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: November 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Takahiro Onoue, Tsutomu Shoki
  • Publication number: 20190079382
    Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
    Type: Application
    Filed: March 21, 2017
    Publication date: March 14, 2019
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu SHOKI, Takahiro ONOUE
  • Publication number: 20180120692
    Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase- shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
    Type: Application
    Filed: December 1, 2017
    Publication date: May 3, 2018
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Takahiro ONOUE, Tsutomu SHOKI
  • Patent number: 9864267
    Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: January 9, 2018
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Takahiro Onoue, Tsutomu Shoki
  • Patent number: 9740091
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: August 22, 2017
    Assignee: HOYA CORPORATION
    Inventors: Takahiro Onoue, Hirofumi Kozakai
  • Patent number: 9720317
    Abstract: A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: August 1, 2017
    Assignee: HOYA CORPORATION
    Inventor: Takahiro Onoue
  • Publication number: 20170038673
    Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12.
    Type: Application
    Filed: November 26, 2014
    Publication date: February 9, 2017
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Takahiro ONOUE, Tsutomu SHOKI
  • Publication number: 20160202601
    Abstract: A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.
    Type: Application
    Filed: September 9, 2014
    Publication date: July 14, 2016
    Applicant: HOYA CORPORATION
    Inventor: Takahiro ONOUE
  • Patent number: 9383637
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film and the like used in the manufacturing of a reflective mask blank for EUV lithography which is to be subjected to dry etching with a Cl-based gas, wherein in the substrate with the multilayer reflective film, the loss of protective films by the dry etching and subsequent wet cleaning is very limited. The present invention is a substrate with a multilayer reflective film used in the manufacturing of a reflective mask blank for EUV lithography, comprising a substrate, a multilayer reflective film disposed on the substrate to reflect EUV light, and a protective film disposed on the multilayer reflective film to protect the multilayer reflective film, the protective film includes an alloy containing at least two metals, the alloy being an all-proportional solid solution.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: July 5, 2016
    Assignee: HOYA CORPORATION
    Inventors: Takahiro Onoue, Toshihiko Orihara
  • Publication number: 20160147139
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.
    Type: Application
    Filed: July 15, 2014
    Publication date: May 26, 2016
    Applicant: HOYA CORPORATION
    Inventors: Takahiro ONOUE, Hirofumi KOZAKAI
  • Patent number: 9183869
    Abstract: A perpendicular magnetic recording medium 100 having a magnetic recording layer 122, wherein a particle diameter of crystal grains in layer 122 improves a SNR while a high coercive force is maintained. There also is at least a ground layer 118, a first magnetic recording layer 122a, and a second magnetic recording layer 122b in this order on a disk base 110. The first layer 122a and the second layer 122b are ferromagnetic layers, each having a granular structure in which a grain boundary part made of a non-magnetic substance is formed between crystal grains each grown in a columnar shape, and A<B when an average particle diameter of the crystal grains in the first magnetic recording layer 122a is taken as A nm and an average particle diameter of the crystal grains in the second magnetic recording layer 122b is taken as B nm.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: November 10, 2015
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventor: Takahiro Onoue
  • Patent number: 9159351
    Abstract: A perpendicular magnetic recording medium includes a substrate, a soft magnetic layer, a pre-underlayer, an underlayer, and a main recording layer serving as a magnetic recording layer. The pre-underlayer contains seed crystal grains that serve as a base for crystal grains of the underlayer, and an addition substance that is added between the seed crystal grains and composed of an element having an atomic radius smaller than that of an element forming the seed crystal grains.
    Type: Grant
    Filed: October 14, 2008
    Date of Patent: October 13, 2015
    Assignee: WD Media (Singapore) PTE. LTD
    Inventors: Kazuaki Sakamoto, Kong Kim, Takahiro Onoue, Masafumi Ishiyama, Teiichiro Umezawa, Kenji Ayama
  • Patent number: 9142241
    Abstract: A perpendicular magnetic recording medium comprises a magnetic recording layer that records a signal, an underlayer formed of Ru or Ru compound below the magnetic recording layer, a non-magnetic layer formed of a non-magnetic material below the underlayer to control crystal orientation of the underlayer, a soft magnetic layer provided below the non-magnetic layer, and a substrate on which the magnetic recording layer, the underlayer, the non-magnetic layer, and the soft magnetic layer are formed. The non-magnetic layer comprises a first non-magnetic layer formed above the soft magnetic layer and a second non-magnetic layer formed above the first non-magnetic layer. The first non-magnetic layer is formed of amorphous Ni compound while the second non-magnetic layer is formed of crystalline Ni or crystalline Ni compound.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: September 22, 2015
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Takahiro Onoue, Tokichiro Sato, Takenori Kajiwara
  • Publication number: 20150262602
    Abstract: Embodiments of a perpendicular magnetic recording medium include: a base; at least a first magnetic recording layer having a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape; a non-magnetic split layer containing Ru disposed on the first magnetic layer; and a second magnetic recording layer that is disposed on the split layer and that has a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape, wherein the first magnetic layer and the second magnetic layer contain oxides that form the grain boundary, and when an oxide content of the first magnetic layer is represented by A and an oxide content of the second magnetic layer is represented by B, a relationship between the oxide contents A/B is in the range of 0.5<A/B<1.0.
    Type: Application
    Filed: May 28, 2015
    Publication date: September 17, 2015
    Inventors: TAKAHIRO ONOUE, TEIICHIRO UMEZAWA
  • Patent number: 9064518
    Abstract: An object of the present invention is to provide a perpendicular magnetic recording medium the SNR of which is further improved while a high coercive force Hc is secured so that a higher recoding density can be achieved.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: June 23, 2015
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Takahiro Onoue, Teiichiro Umezawa
  • Patent number: 9047903
    Abstract: An object of the present invention is to provide a perpendicular magnetic recording medium in which each space between crystal grains of a first magnetic recording layer is so designed as to allow the layer to also have a function as a continuous layer, and a method of manufacturing a perpendicular magnetic recording medium. In a perpendicular magnetic recording medium 100 according to the present invention, a first magnetic recording layer 122a and a second magnetic recording layer 122b are ferromagnetic layers each having a granular structure in which a grain boundary part made of a non-magnetic substance is formed between crystal grains each grown in a column shape and, in the first magnetic recording layer 122a, an intergranular distance defined by an average of shortest distances between grain boundary parts each between a crystal grain and its adjacent crystal grain is equal to or shorter than 1 nm.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: June 2, 2015
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventor: Takahiro Onoue
  • Publication number: 20140370424
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film and the like used in the manufacturing of a reflective mask blank for EUV lithography which is to be subjected to dry etching with a Cl-based gas, wherein in the substrate with the multilayer reflective film, the loss of protective films by the dry etching and subsequent wet cleaning is very limited. The present invention is a substrate with a multilayer reflective film used in the manufacturing of a reflective mask blank for EUV lithography, comprising a substrate, a multilayer reflective film disposed on the substrate to reflect EUV light, and a protective film disposed on the multilayer reflective film to protect the multilayer reflective film, the protective film includes an alloy containing at least two metals, the alloy being an all-proportional solid solution.
    Type: Application
    Filed: March 21, 2013
    Publication date: December 18, 2014
    Applicant: HOYA CORPORATION
    Inventors: Takahiro Onoue, Toshihiko Orihara