Abstract: Disclosed is a coating apparatus capable of enhancing the film thickness uniformity. The coating apparatus includes a nozzle and a moving mechanism. The nozzle includes a storage chamber that stores a coating liquid and a slit-like flow path that is in communication with the storage chamber, and discharges the coating liquid through a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and the substrate relatively to each other along a surface of the substrate. Also, in the flow path provided in the nozzle, flow resistance at the central portion in the longitudinal direction is larger than that at both end portions in the longitudinal direction.

Abstract: Devices, methods, and programs for controlling disclosure of information or data. Disclosure to a first user of data provided by a third user may be controlled based, at least in part, on first information indicating a closeness of a relationship between the first user and a second user who is a subject of the data.

Abstract: A positive electrode active material for a non-aqueous electrolyte secondary battery is provided. The positive electrode active material includes a composite oxide containing lithium and metal M other than lithium, and M contains Ni, Mn, and Co. The molar ratio of Ni to the total of Ni, Mn, and Co is from 0.45 to 0.65, and the molar ratio of Mn to the total of Ni, Mn, and Co is from 0.15 to 0.35. The positive electrode active material has a pressed density under a compression of 60 MPa of 3.3 g/cm3 or more and 4.3 g/cm3 or less. The positive electrode active material has a volume resistivity under a compression of 60 MPa of 100 ?·cm or more and less than 1000 ?·cm.

Abstract: A method for producing a lithium-containing transition metal oxide represented by the general formula: Li[Lix(NiaM1?a)1?x]O2 where M is metal other than Li and Ni, 0?x, and 0<a. The method includes: (i) mixing a transition metal compound containing Ni and M in a molar ratio of a:(1?a) with lithium carbonate in a predetermined ratio; (ii) causing the temperature of the mixture to reach a predetermined temperature range while repeatedly raising and lowering the temperature thereof; and (iii) thereafter reacting the transition metal compound with the lithium carbonate in the predetermined temperature range.

Abstract: A positive electrode active material for a non-aqueous electrolyte secondary battery is provided. The positive electrode active material includes a composite oxide containing lithium and metal M other than lithium, and M contains Ni, Mn, and Co. The molar ratio of Ni to the total of Ni, Mn, and Co is from 0.45 to 0.65, and the molar ratio of Mn to the total of Ni, Mn, and Co is from 0.15 to 0.35. The positive electrode active material has a pressed density under a compression of 60 MPa of 3.3 g/cm3 or more and 4.3 g/cm3 or less. The positive electrode active material has a volume resistivity under a compression of 60 MPa of 100 ?·cm or more and less than 1000 ?·cm.

Abstract: A hinge structure that has a simple structure, does not deteriorate with time and can prevent generation of clicking sound, and a mobile terminal having the hinge structure, and a hinge unit are provided. A hinge unit 3 of which a trunk and a hinge head 3a are linked to each other to freely rotate through a rotary shaft in a predetermined range of angle, a housing on the display side 1 to which the trunk is fixed, and a housing on the operation side 2 having the hinge head 3a inserted thereinto with a predetermined gap being kept are provided, in which, in a contact portion where the hinge head 3a and the housing on the operation side 2 contact with each other in a state that the housing on the display side 1 and the housing on the operation side 2 are opened most, the hinge head 3a and the housing on the operation side 2 are brought into surface contact with each other.

Abstract: A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.

Abstract: A license evaluation apparatus and method is disclosed which can specify the substance and the position of an error only with a simple description without the necessity to analyze the error in an ex post fact fashion. A data storage section stores licenses, and a content selection section selects a content. A license extraction section extracts the license from within the data storage section. A conditional expression decision section reads a conditional expression in use condition information of the license and an error code annexed in advance to the conditional expression and deciding whether or not the conditional expression is satisfied. If the conditional expression is not satisfied, an error code retaining section retains the error code. An application to which the error code is returned can specify the error without analyzing the error in an ex post fact fashion.

Abstract: A content reproduction apparatus and method is disclosed which can manage a use state for each one, two or more tracks included in a content and perform prescribed updating irrespective of the number of tracks reproduced in an overlapping relationship, with the following configuration. The content reproduction apparatus includes: a track selection section operable in response to a reproduction request of a content for selecting a track or tracks; a status ID reading section reads a status ID from the selected track; a license extraction section extracts a license corresponding to the status ID; a status information extraction section extracts, when the extracted license includes a use limitation condition, the status information corresponding to the status ID; and a license decision section decides whether or not the use state of the status information satisfies the use limitation condition of the license.

Abstract: A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.

Abstract: A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.

Abstract: A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.

Abstract: An elastic wave generator includes an excitation coil, a magnetostriction oscillator around which the excitation coil is wound and an oscillator support. The excitation coil is wound around the oscillator, which is made of laminated magnetostriction sheets having a positive strain characteristic, in which length varies directionally upon magnetic excitation. The oscillator support has a first support surface bearing against a first end surface of the magnetostriction oscillator, intersecting the direction along which the length of the magnetostriction oscillator changes and a second support surface shrink-fit against a second end surface of the magnetostriction oscillator, intersecting the direction along which the length of the magnetostriction oscillator changes. Thus, the changes in the length of the magnetostriction oscillator due to the magnetic excitation of the excitation coil appearing at the first and second end surfaces is directly supported by the first and second support surfaces.

Abstract: Ag particles produced by chemical reduction and having a mean particle size of 5 &mgr;m are added by 0.05-3 wt % and Zn are added by 2-10 wt % to a Pb-less brush body containing graphite, Cu and a metal sulfide solid lubricant of a metal-graphite brush.

Abstract: The write protect switch SW comprises a first piece of metal (50) formed from a stationary metal piece and a second piece of metal (40). The touching portion (46) of the second piece of metal (40) that comes in contact with one of the slide positions of the write protect button (3) in the recess (2) is situated generally at the center position between the contact portion (45) and the holding portion (42) of the second piece of metal (40) or on the holding portion (42) side of the center position. This arrangement ensures a reliable, stable separably connecting operation of the two pieces of metal (40, 50) and provides a necessary contact pressure between them so that the position of the write protect button (3) can be detected accurately and reliably.

Abstract: A metal-graphite brush has a copper-graphite brush body to which a metal sulfide solid lubricant is added and a lead embedded. Indium is at least added to an interface between the brush body and the lead in a concentration of 0.4-8 wt %.

Abstract: A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.

Abstract: A memory card includes: a main body of the memory card in which a notched section is formed; a semiconductor memory; and a write/nonwrite setting element for setting the write/nonwrite state of data in the semiconductor memory, the write/nonwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write/nonwrite setting element slides along the elastic guide so as to set the write/nonwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write/nonwrite setting element so as to select the position of the write/nonwrite setting element with respect to the elastic guide.