Abstract: In a plasma processing apparatus including a processing chamber disposed in a vacuum chamber, a sample stage disposed in the processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

Abstract: According to one embodiment, a vacuum processing device is provided which is capable of being controlled to create the most suitable gas flow under the situation where the device is placed by allowing a plurality of vacuum transfer chambers to communicate with each other via the intermediate chamber in an operation method of the vacuum processing device including the plurality of vacuum transfer chambers connected to each other via the intermediate chamber and a plurality of vacuum processing chambers respectively connected to the vacuum transfer chambers.

Abstract: According to one embodiment, a vacuum processing device is provided which is capable of being controlled to create the most suitable gas flow under the situation where the device is placed by allowing a plurality of vacuum transfer chambers to communicate with each other via the intermediate chamber in an operation method of the vacuum processing device including the plurality of vacuum transfer chambers connected to each other via the intermediate chamber and a plurality of vacuum processing chambers respectively connected to the vacuum transfer chambers.

Abstract: According to one embodiment, a vacuum processing device is provided which is capable of being controlled to create the most suitable gas flow under the situation where the device is placed by allowing a plurality of vacuum transfer chambers to communicate with each other via the intermediate chamber in an operation method of the vacuum processing device including the plurality of vacuum transfer chambers connected to each other via the intermediate chamber and a plurality of vacuum processing chambers respectively connected to the vacuum transfer chambers.

Abstract: A plasma processing apparatus including a wafer stage disposed in a processing chamber arranged in a vacuum chamber to hold a wafer as a processing object on a surface of the wafer stage, to conduct processing for the wafer by use of plasma, wherein the wafer includes grooves, each of the grooves extending from a central portion of a surface on which the wafer is held to an outer circumferential edge of the surface, the grooves including openings at the outer circumferential edge, and the processing is conducted in a state in which the wafer is held at predetermined height over an upper surface of the wafer stage.