Abstract: The present invention provides a process for producing a fine organic pigment having a very small primary particle size, and a fine organic pigment produced by the process; a process for producing a dispersion using the fine organic pigment, and a dispersion produced by the process; and a process for producing an ink using the dispersion. The present invention relates to [1] a process for producing a fine organic pigment, including step 1 of kneading a mixture prepared by blending a raw material organic pigment, a water-soluble inorganic salt, a water-soluble organic solvent and water with each other, the water being blended in an amount of not less than 0.6 part by mass and not more than 4.

Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Abstract: A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer above the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer; a p-type nitride semiconductor layer above the second nitride semiconductor layer; two third nitride semiconductor layers of n-type above the second nitride semiconductor layer and located separately on either side of the p-type nitride semiconductor layer; and a first ohmic electrode above one of the two third nitride semiconductor layers and a second ohmic electrode above the other of the two third nitride semiconductor layers; and a gate electrode above the p-type nitride semiconductor layer. The second nitride semiconductor layer includes, in a region above which neither the p-type nitride semiconductor layer nor the two third nitride semiconductor layers is located, a surface layer including p-type impurities identical to those in the p-type nitride semiconductor layer.

Abstract: Disclosed are a method of forming a back reflection layer in a solar cell, a composition used therefor, and a solar cell having a back reflection layer formed by the method, which layer has superior heat-resistance and various types of durabilities, and can contribute to improving the conversion rate of solar cells and reliability during long-term use, and which method can form a back reflection layer in a solar cell easily and at low cost. The polyimide resin composition for use in forming a back reflection layer in a solar cell includes an organic solvent, a polyimide resin dissolved in the organic solvent, and light-reflecting particles dispersed in the organic solvent.

Abstract: An austenitic heat-resistant cast steel includes 0.1 to 0.6% by mass of C, 1.0 to 3.0% by mass of Si, 0.5 to 1.5% by mass of Mn, 0.05% by mass or less of P, 0.05 to 0.3% by mass of S, 9 to 16% by mass of Ni, 14 to 20% by mass of Cr, 0.1 to 0.2% by mass of N, and the balance of iron and inevitable impurities, in which a matrix structure of the austenitic heat-resistant cast steel is configured of austenite crystal grains, and a ferrite phase is dispersed and interposed between the austenite crystal grains so as to cover the austenite crystal grains.

Abstract: A mobile communication device that includes: a storage unit configured to store therein image data; an address book storage unit configured to store therein communication party information associated with the image data; and an output control unit configured to display, when a sent mail that is transmitted by the mobile communication device is selected by selection of transmission destination information that corresponds to the sent mail, image data together with the transmission destination information, wherein the transmission destination information comprises communication party information pertaining to the sent mail, the image data being associated with the transmission destination information such that the image data is displayed together with the transmission destination information upon selection of the transmission destination information, and wherein the image data was previously stored in the storage unit and not attached to the sent mail when it was sent.

Abstract: An image processing apparatus for extracting an area of a detection target from an image includes an image input section that acquires an image, an image generation section that generates a plurality of images with different resolutions from the image, and a segmentation section that performs segmentation using the plurality of images with the different resolutions. The segmentation section segments an image with a low resolution and then segmenting an image with a high resolution using, as a processing target area, an area in the image with the high resolution corresponding to an area near a boundary resulting from processing of the segmentation of the image with the low resolution.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided.

Abstract: The present invention aims at offering a mobile communication device allowing the user to identify the sender when the user selects or opens a mail in a mail list by outputting an image and music that have been registered to the address book. Accordingly, when a mail is selected in the mail list of the mail box 401, or when a mail is opened and the mail message is displayed, the received mail display control unit 140 searches a mail address of the sender of the received mail in the address book 301. If the image/music data ID information 303(?) that has been registered in association with the sender of the mail address is present in the address book 301, the received mail display control unit 140 reads image data or music data from the image/music information 302 of the information storage unit 100 based on the image-music data ID information 303.

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract: A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material.

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract: A plurality of relatively long wires having the same diameter are bundled together to obtain a bundle wire in a continuous wire bundling process. A wire bundling device includes a plurality of reels rotated by a rotating drive and wind a wire while a first end is engaged. A wire second-end pressing device collects and presses a second end of each of a plurality of wires having a predetermined length which is fed from a single spool and individually wound around each of a plurality of reels. The wires are withdrawn in a collected state from the reels by a withdrawing device between the plurality of reels and the wire second-end pressing device. The wire second-end press includes first and second pressing devices. The reels are rotated by an electric motor with a contact roller that rotates in contact with an outer circumference of the reel. The motor can be moved so that the contact roller selectively makes contact with the outer circumferences of the reels.

Abstract: To provide crystal polymorphs of 4-[5-(pyridin-4-yl)-1H-1,2,4-triazol-3-yl]pyridine-2-carbonitrile, which is a useful pharmaceutical, and a production method therefor. Through purification of a corresponding salt, recrystallization, or storage under humidified conditions, three different crystal forms; i.e., crystalline polymorphs of 4-[5-(pyridin-4-yl)-1H-1,2,4-triazol-3-yl]pyridine-2-carbonitrile are produced.

Abstract: Provided are an exhaust gas purification catalyst including a carrier containing substituted aluminum borate in which 2.5 to 11.5 at. % of aluminum atoms contained therein are substituted by Fe, Co, Ga, or Ni, and Pd supported on the carrier; and an exhaust gas purification catalyst product including a catalyst support made of a ceramic or metallic material, and a layer of the aforementioned exhaust gas purification catalyst and which is supported on the catalyst support.

Abstract: A nonionic surfactant composition including: a nonionic surfactant that contains a molecule having a C10-C22 alkyl group and/or alkenyl group as a hydrophobic group, a polyoxyalkylene chain as a hydrophilic group, no aromatic ring, no C9-C14 alkyl group derived from an alcohol that is produced from a higher olefin derived from a mixture of propylene and butene through an oxo process, and no C13 alkyl group derived from an alcohol that is produced from a higher olefin derived from a propylene tetramer through an oxo process. The nonionic surfactant has a hydrodynamic radius of 5.0 to 8.0 nm at 40° C. in an aqueous solution in which a nonionic surfactant concentration is 0.1 kg/L in the nonionic surfactant composition, the radius being measured by a dynamic light scattering method.

Abstract: A catalyst for exhaust gas purification having superior exhaust gas purification performance is provided. Disclosed is a catalyst containing, as a catalyst support, a composite phosphate containing yttrium and phosphorus and having a composition ratio of yttrium to phosphorus (Y/P) of greater than 1 as a molar ratio.

Abstract: An electrostatic protection component includes: a body in which a plurality of ceramic substrates is laminated; and a pair of discharge electrodes which are formed within the body and which are spaced to face each other. The discharge electrodes include main body portions extending along a longitudinal direction, and the main body portions include tips in the longitudinal direction and side edges extending along the longitudinal direction. The pair of discharge electrodes are arranged such that both the main body portions are adjacent to each other in a short direction. The discharge electrodes face each other in the short direction between the side edges, and discharge occurs only between the side edges, between the discharge electrodes.

Abstract: At least one terahertz-wave generation device configured to generate a terahertz wave includes a polarization control unit configured to control a polarization direction of light from a light source, and a waveguide including a nonlinear optical crystal disposed such that the light having the polarization direction controlled by the polarization control unit is incident on the nonlinear optical crystal. The nonlinear optical crystal emits a terahertz wave upon the light being incident thereon. The polarization control unit is further configured to control an electric-field intensity of the light to be incident on the nonlinear optical crystal in a direction of a Z-axis of the nonlinear optical crystal.

Abstract: The local air cleaning apparatus 1 causes a cleaned uniform air flow blown out from an air flow opening face 23 to collide with an air collision face W to flow outside an open region, so as to cause cleanliness to be higher inside a guide 3 and inside the open region than other regions. Additionally, the apparatus 1 includes at least one of a device for measuring pressures inside the guide 3 and inside a push hood 2, a device for measuring the cleanliness inside the guide 3 or of the open region, and a device for measuring a gap area between the guide 3 and the air collision face W, and, to ensure the cleanliness from a result of the measurement, controls such that a flow velocity of the cleaned uniform air flow blown out from the air flow opening face 23 can be decelerated or accelerated.