Abstract: A clamp element 46 applies a fixed potential to a bit line BL at a time of a readout operation. A reference current source RCS generates a reference current Iref. An offset current source OCS1 is activated at a time of a readout operation for an OTP cell OTPC, and at a time of being activated, generates an offset current Iof1 to be subtracted from a cell current Icel. At the time of the readout operation for the OTP cell OTPC, the sense amplifier SA detects a magnitude relationship between the reference current Iref and a readout current Ird obtained by subtracting the offset current Iof1 from the cell current Icel.

Abstract: Speed enhancement of data reading is achieved while suppressing an influence of an offset voltage of a differential amplifier.

Abstract: A semiconductor device capable of changing a data programming process in a simple manner according to a situation is provided. The semiconductor device includes a plurality of memory cells, a programming circuit for supplying a programming current to the memory cell, and a power supply circuit for supplying power to the programming circuit. The power supply circuit includes a charge pump circuit for boosting the external power supply, a voltage of the external power supply according to the selection indication, and a selectable circuit capable of switching the boosted voltage boosted by the charge pump circuit. The control circuit further includes a control circuit for executing data programming processing by the programming circuit by switching the selection indication.