Abstract: This composite material blade, which is formed using a composite material including reinforcing fibers and resin, and which has a positive pressure surface and a negative pressure surface, is provided with a ventral part, being the part on the positive pressure surface side in a blade thickness direction, which is the direction joining the positive pressure surface and the negative pressure surface, a dorsal part, being the part on the negative pressure surface side in the blade thickness direction, and a metal shield portion which is provided on the leading edge side, being the upstream side in a flow direction in which a fluid flows, wherein: the metal shield portion includes a main body portion provided on the leading edge side, and an embedded portion which is provided on the trailing edge side, being the downstream side in the flow direction, of the main body portion, and which is provided between the ventral part and the dorsal part; and the plate thickness of the metal shield portion in the blade thick

Abstract: There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a high-frequency power for generating plasma in the processing container is applied; a high-frequency power supply configured to apply the high-frequency power to the electrode; and a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode. The high-frequency power supply circuit comprises: a power supply path configured to supply a power from the high-frequency power supply to the electrode; and a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.

Abstract: There is provided a plasma processing apparatus comprising: a chamber; a gas supply configured to supply a processing gas into the chamber; an exhaust device configured to exhaust a gas within the chamber; a substrate support including a lower electrode electrically floating from a ground potential and provided within the chamber; an upper electrode provided above the substrate support; a power supply electrically connected to the upper electrode and configured to generate high frequency power or to periodically generate pulses of DC voltage; and a ring electrode provided around the substrate support so as to surround the substrate support and connected to ground.

Abstract: A plasma processing apparatus comprising: a chamber; a lower electrode provided in the chamber and included in a substrate support mounts a substrate thereon; an upper electrode provided in the chamber and disposed to face the lower electrode; a gas supply configured to supply a processing gas between the upper electrode and the lower electrode; a high-frequency power supply electrically connected to the upper electrode and configured to generate a plasma of the processing gas by applying a high-frequency voltage to the upper electrode; and a circuit portion electrically connected between the high-frequency power supply and the lower electrode and provides a potential to the lower electrode. The circuit portion provides the potential to the lower electrode by causing a current to flow from the high-frequency power supply toward the lower electrode when a potential of the high-frequency power supply is higher than a potential of the lower electrode.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: A plasma processing apparatus is provided. The apparatus comprises a chamber, a lower electrode, an upper electrode, a gas supply, an RF power supply and a circuit. The circuit is configured to provide a potential to the lower electrode and includes a first circuit and a second circuit. The first circuit has a rectifier, a capacitor, a first current path, and a second current path. In the first current path, the rectifier is electrically connected between the lower electrode and the capacitor, and the capacitor is electrically connected between the rectifier and the ground. In the second current path, the rectifier is electrically connected between the lower electrode and the ground. The rectifier is configured to allow a current to flow toward the capacitor in the first current path and to allow a current to flow toward the lower electrode in the second current path. The second circuit is electrically connected to the capacitor and is configured to provide a voltage generated in the capacitor.

Abstract: There is provided a plasma processing apparatus comprising: a processing container; a lower electrode provided inside the processing container; an upper electrode disposed to face the lower electrode; a gas supply configured to supply a processing gas between the upper electrode and the lower electrode; a high frequency power source configured to generate plasma of the processing gas by applying a high frequency voltage to the upper electrode; and a voltage waveform shaping part provided between the high frequency power source and the upper electrode and configured to shape a voltage waveform of a high frequency voltage output from the high frequency power source by converting a positive voltage component into a negative voltage component.

Abstract: A plasma processing apparatus is provided to perform plasma processing on a substrate. The plasma processing apparatus includes a processing chamber, a substrate support disposed in the processing chamber to place thereon the substrate, a grounded lower electrode provided in the substrate support, an upper electrode disposed to face the lower electrode, a gas supply unit to supply a processing gas to a space between the upper electrode and the substrate support, and a radio frequency power supply to apply RF power to the upper electrode to generate plasma of the processing gas. The plasma processing apparatus further includes a voltage waveform shaping unit provided between the RF power supply and the upper electrode to shape a voltage waveform of the RF power supply to suppress a positive voltage of the RF voltage applied to the upper electrode.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: The present invention is to provide an anisotropic porous material for a fluid filter which can perform a separation process of a large amount of fluid with high accuracy, which can achieve high flux, and which can improve detergent properties. The anisotropic porous material includes a plurality of pores. Each of the pores has an anisotropic shape in which a major axis and a minor axis can be defined. An arrangement of the pores has an orientation.