Patents by Inventor Takahiro Shindo
Takahiro Shindo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12220616Abstract: An object of the present disclosure is to provide a golf ball having good shot feeling and excellent durability while having non-lowered resilience. The present disclosure provides a golf ball comprising a spherical core and one or more cover layers disposed outside the spherical core, wherein at least one layer of the cover layers contains (A) a base resin and (B) a polyethylene oxide.Type: GrantFiled: April 21, 2023Date of Patent: February 11, 2025Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.Inventors: Ayaka Shindo, Takahiro Shigemitsu, Kazuyoshi Shiga, Toshiyuki Tarao, Takanobu Kawamura
-
Publication number: 20250046575Abstract: A plasma processing apparatus comprises a plasma supply part including an upper electrode being electrically connected to a RF power supply and to which an RF voltage from the RF power supply is applied, and a lower electrode part being disposed to face the upper electrode, a gas supply part configured to supply to the plasma supply part a processing gas, and a voltage adjusting part used for adjusting a voltage of the upper electrode. The lower electrode part includes an electrode plate having a mesh structure and configured to allow communication between an inner region and an outer region of the plasma supply part provided by the lower electrode part. The plasma supply part and the voltage adjusting part are configured to lower a sheath voltage of a sheath region formed on the lower electrode part during plasma generation in the plasma supply part.Type: ApplicationFiled: October 25, 2024Publication date: February 6, 2025Inventor: Takahiro SHINDO
-
Publication number: 20250006471Abstract: A method of forming a nitride film includes: (a) preparing a substrate; (b) supplying a halogen-containing raw material gas into a processing container; (c) supplying a nitrogen-containing gas into the processing container, wherein the nitride film is formed by repeating a cycle including (b) and (c) a set number of times; and (d) reforming the nitride film by supplying a hydrogen-containing gas to the processing container to generate a hydrogen radical by a direct current (DC) pulse voltage, between (b) and (c).Type: ApplicationFiled: November 4, 2022Publication date: January 2, 2025Inventors: Takamichi KIKUCHI, Takahiro SHINDO
-
Patent number: 12027344Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.Type: GrantFiled: October 26, 2022Date of Patent: July 2, 2024Assignee: Tokyo Electron LimitedInventors: Shinya Iwashita, Ayuta Suzuki, Takahiro Shindo, Kazuki Dempoh, Tatsuo Matsudo, Yasushi Morita, Takamichi Kikuchi, Tsuyoshi Moriya
-
Publication number: 20240120179Abstract: There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a high-frequency power for generating plasma in the processing container is applied; a high-frequency power supply configured to apply the high-frequency power to the electrode; and a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode. The high-frequency power supply circuit comprises: a power supply path configured to supply a power from the high-frequency power supply to the electrode; and a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.Type: ApplicationFiled: January 19, 2022Publication date: April 11, 2024Inventors: Masaharu SHIRATANI, Kunihiro KAMATAKI, Kazunori KOGA, Takahiro SHINDO, Tatsuo MATSUDO
-
Publication number: 20230335379Abstract: There is provided a plasma processing apparatus comprising: a chamber; a gas supply configured to supply a processing gas into the chamber; an exhaust device configured to exhaust a gas within the chamber; a substrate support including a lower electrode electrically floating from a ground potential and provided within the chamber; an upper electrode provided above the substrate support; a power supply electrically connected to the upper electrode and configured to generate high frequency power or to periodically generate pulses of DC voltage; and a ring electrode provided around the substrate support so as to surround the substrate support and connected to ground.Type: ApplicationFiled: September 16, 2021Publication date: October 19, 2023Inventor: Takahiro SHINDO
-
Publication number: 20230124217Abstract: A plasma processing apparatus comprising: a chamber; a lower electrode provided in the chamber and included in a substrate support mounts a substrate thereon; an upper electrode provided in the chamber and disposed to face the lower electrode; a gas supply configured to supply a processing gas between the upper electrode and the lower electrode; a high-frequency power supply electrically connected to the upper electrode and configured to generate a plasma of the processing gas by applying a high-frequency voltage to the upper electrode; and a circuit portion electrically connected between the high-frequency power supply and the lower electrode and provides a potential to the lower electrode. The circuit portion provides the potential to the lower electrode by causing a current to flow from the high-frequency power supply toward the lower electrode when a potential of the high-frequency power supply is higher than a potential of the lower electrode.Type: ApplicationFiled: October 19, 2022Publication date: April 20, 2023Inventors: Takahiro SHINDO, Hiroki ARAI
-
Publication number: 20230051432Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.Type: ApplicationFiled: October 26, 2022Publication date: February 16, 2023Inventors: Shinya IWASHITA, Ayuta SUZUKI, Takahiro SHINDO, Kazuki DEMPOH, Tatsuo MATSUDO, Yasushi MORITA, Takamichi KIKUCHI, Tsuyoshi MORIYA
-
Publication number: 20230038750Abstract: A plasma processing apparatus is provided. The apparatus comprises a chamber, a lower electrode, an upper electrode, a gas supply, an RF power supply and a circuit. The circuit is configured to provide a potential to the lower electrode and includes a first circuit and a second circuit. The first circuit has a rectifier, a capacitor, a first current path, and a second current path. In the first current path, the rectifier is electrically connected between the lower electrode and the capacitor, and the capacitor is electrically connected between the rectifier and the ground. In the second current path, the rectifier is electrically connected between the lower electrode and the ground. The rectifier is configured to allow a current to flow toward the capacitor in the first current path and to allow a current to flow toward the lower electrode in the second current path. The second circuit is electrically connected to the capacitor and is configured to provide a voltage generated in the capacitor.Type: ApplicationFiled: July 28, 2022Publication date: February 9, 2023Inventor: Takahiro SHINDO
-
Publication number: 20230013551Abstract: There is provided a plasma processing apparatus comprising: a processing container; a lower electrode provided inside the processing container; an upper electrode disposed to face the lower electrode; a gas supply configured to supply a processing gas between the upper electrode and the lower electrode; a high frequency power source configured to generate plasma of the processing gas by applying a high frequency voltage to the upper electrode; and a voltage waveform shaping part provided between the high frequency power source and the upper electrode and configured to shape a voltage waveform of a high frequency voltage output from the high frequency power source by converting a positive voltage component into a negative voltage component.Type: ApplicationFiled: July 7, 2022Publication date: January 19, 2023Inventors: Hiroshi OTOMO, Takahiro SHINDO
-
Publication number: 20220020568Abstract: A plasma processing apparatus is provided to perform plasma processing on a substrate. The plasma processing apparatus includes a processing chamber, a substrate support disposed in the processing chamber to place thereon the substrate, a grounded lower electrode provided in the substrate support, an upper electrode disposed to face the lower electrode, a gas supply unit to supply a processing gas to a space between the upper electrode and the substrate support, and a radio frequency power supply to apply RF power to the upper electrode to generate plasma of the processing gas. The plasma processing apparatus further includes a voltage waveform shaping unit provided between the RF power supply and the upper electrode to shape a voltage waveform of the RF power supply to suppress a positive voltage of the RF voltage applied to the upper electrode.Type: ApplicationFiled: July 13, 2021Publication date: January 20, 2022Inventors: Takahiro SHINDO, Seiichi OKAMOTO, Hiroshi OTOMO, Takamichi KIKUCHI, Tatsuo MATSUDO, Yasushi MORITA, Takashi SAKUMA
-
Publication number: 20190385815Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.Type: ApplicationFiled: June 4, 2019Publication date: December 19, 2019Inventors: Shinya IWASHITA, Ayuta SUZUKI, Takahiro SHINDO, Kazuki DEMPOH, Tatsuo MATSUDO, Yasushi MORITA, Takamichi KIKUCHI, Tsuyoshi MORIYA
-
Publication number: 20070104941Abstract: The present invention is to provide an anisotropic porous material for a fluid filter which can perform a separation process of a large amount of fluid with high accuracy, which can achieve high flux, and which can improve detergent properties. The anisotropic porous material includes a plurality of pores. Each of the pores has an anisotropic shape in which a major axis and a minor axis can be defined. An arrangement of the pores has an orientation.Type: ApplicationFiled: November 6, 2006Publication date: May 10, 2007Inventors: Tsuneji Kameda, Yoshiyasu Ito, Takahiro Shindo, Yuuji Hisazato