Abstract: a first compliance portion provided at a position on the first side of a coupling area in the common flow path where the common flow path is coupled to the plurality of individual flow paths; and a second compliance portion, different from the first compliance portion, provided at a position on a second side of the coupling area in the common flow path, the second side being the other side in the second direction and being opposite to the first side, and the first compliance portion and the second compliance portion have an overlapping portion where the first compliance portion and the second compliance portion partially overlap each other as viewed in the second direction.

Abstract: A liquid ejecting head includes: a nozzle substrate having a nozzle configured to eject liquid; a pressure chamber substrate having a pressure chamber in which a pressure for ejecting liquid through the nozzle is applied to liquid and an absorption chamber adjacent to an upstream portion of the pressure chamber and configured to absorb vibration of liquid that occurs when a pressure is applied to the liquid in the pressure chamber; a first piezoelectric element associated with the pressure chamber and configured to be driven by voltage application; and a second piezoelectric element associated with the absorption chamber and configured to be driven independently of the first piezoelectric element by voltage application.

Abstract: A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.

Abstract: A substrate processing method is a method of processing a substrate on which a metal-containing liquid for a film below a resist is applied, wherein prior to a heating process of performing a heat treatment on the substrate applied with the metal-containing liquid, the substrate processing method includes: a deprotection promoting process of promoting deprotection of functional groups in a material for the film included in the substrate on which the metal-containing liquid has been applied; a solvent removing process of removing a solvent included in the metal-containing liquid on the substrate; and a moisture absorbing process of bringing a surface of the substrate into contact with moisture.

Abstract: A substrate processing method is a method of processing a substrate on which a metal-containing liquid for a film below a resist is applied, wherein prior to a heating process of performing a heat treatment on the substrate applied with the metal-containing liquid, the substrate processing method includes: a deprotection promoting process of promoting deprotection of functional groups in a material for the film included in the substrate on which the metal-containing liquid has been applied; a solvent removing process of removing a solvent included in the metal-containing liquid on the substrate; and a moisture absorbing process of bringing a surface of the substrate into contact with moisture.

Abstract: A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.

Abstract: A thermal treatment apparatus performs a thermal treatment on a metal-containing film formed on a substrate. The thermal treatment apparatus includes a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film. At the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

Abstract: A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

Abstract: A substrate processing method includes a coating step that applies a coating liquid to a substrate having a front surface on which a pattern is formed, thereby forming a coating film on the substrate, a film removing step that heats the substrate to gasify components of the coating film thereby to reduce a thickness of the film, and a film curing step that is performed after or simultaneously with the film removing step and that heats the substrate to cure the coating film through crosslinking reaction. The film removing step is performed under conditions ensuring that an average thickness of the cured coating film is not greater than 80% of an average thickness of the coating film before being subjected to the film removing step.

Abstract: A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.

Abstract: A substrate processing method includes a coating step that applies a coating liquid to a substrate having a front surface on which a pattern is formed, thereby forming a coating film on the substrate, a film removing step that heats the substrate to gasify components of the coating film thereby to reduce a thickness of the film, and a film curing step that is performed after or simultaneously with the film removing step and that heats the substrate to cure the coating film through crosslinking reaction. The film removing step is performed under conditions ensuring that an average thickness of the cured coating film is not greater than 80% of an average thickness of the coating film before being subjected to the film removing step.

Abstract: A numerical control device for a wire electric discharge machining apparatus generates a wire-breakage sign signal, outputs a machining-condition re-setting instruction and wire-breakage threshold re-setting instruction from the wire-breakage sign signal and wire-breakage threshold, sets the wire-breakage threshold according to the wire-breakage threshold re-setting instruction and a wire-breakage signal, calculates a machining energy from a discharge pulse count, measures a machining speed from position information, calculates a board thickness of the workpiece from the machining energy and machining speed, outputs, according to a predetermined algorithm, a machining-condition switching instruction from the board thickness, the machining-condition re-setting instruction, and the wire-breakage signal, sends an oscillation instruction to a oscillator and sends a shaft feed instruction to a servo amplifier so that the machining condition is set to one determined by the machining-condition switching instruction,

Abstract: A wire electric discharge machining apparatus that performs an electric discharge machining by applying a pulse voltage between a wire electrode (1) and a workpiece (2), the wire electric discharge machining apparatus including, a machining speed detection unit (14) that detects relative machining speed of the workpiece (2) and the wire electrode (1); a machining energy calculation unit (13) that calculates machining energy of a discharge pulse; a board thickness calculation unit (12) that calculates a board thickness of the workpiece (4) based on the machining speed detected by the machining speed detection unit (14) and the machining energy calculated by the machining energy calculation unit (13); a stationary state determination unit (16) that determines whether the machining is in a stationary state from a machining state during the machining, after the machining condition is switched in accordance with a board thickness of the workpiece (4) calculated by the board thickness calculation unit (12); and a m

Abstract: A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.

Abstract: In order to obtain wire-breakage thresholds and machining conditions for respective board thicknesses in a trial machining, a numerical control device for a wire electric discharge machining apparatus according to the present invention includes a wire-breakage-sign-signal generation means that generates a wire-breakage sign signal from machining state quantities, a wire-breakage sign detection means that outputs a machining-condition re-setting instruction and a wire-breakage threshold re-setting instruction from the wire-breakage sign signal and a wire-breakage threshold, a wire-breakage threshold setting means that sets the wire-breakage threshold according to the wire-breakage threshold re-setting instruction and a wire-breakage signal, a machining energy calculation means that calculates a machining energy from a discharge pulse count, a machining speed measurement means that measures a machining speed from position information, a board thickness calculation means that calculates a board thickness of the

Abstract: A wire electric discharge machining apparatus that performs an electric discharge machining by applying a pulse voltage between a wire electrode (1) and a workpiece (2), the wire electric discharge machining apparatus including, a machining speed detection unit (14) that detects relative machining speed of the workpiece (2) and the wire electrode (1); a machining energy calculation unit (13) that calculates machining energy of a discharge pulse; a board thickness calculation unit (12) that calculates a board thickness of the workpiece (4) based on the machining speed detected by the machining speed detection unit (14) and the machining energy calculated by the machining energy calculation unit (13); a stationary state determination unit (16) that determines whether the machining is in a stationary state from a machining state during the machining, after the machining condition is switched in accordance with a board thickness of the workpiece (4) calculated by the board thickness calculation unit (12); and a m

Abstract: A serial digital signal transmission apparatus can transmit HDTV digital serial signals with little jitter while utilizing the SRTS method. In the apparatus, parallel clocks are counted by an N counter to be supplied to the latch circuit, which latches the output count of a p-bit counter, RTSs are supplied from the latch circuit, as the result of comparison gated by a gate circuit is supplied to a PLL circuit and multiplied by N, parallel clocks of 74.25 MHz or 74.25/1.001 MHz, which are inputs to the N counter are regenerated (N is 8, 15 or 16), and transmitted data undergo parallel-to-serial conversion by a PS converter with these parallel clocks.

Abstract: To provide an optical switcher capable of sending incident light on one input port to any plurality of output ports. The optical switcher includes input ports disposed on extensions of m input optical paths (m being 2 or greater natural number), output ports disposed on extensions of n output optical paths (n being 2 or greater natural number), and movable translucent switch mirrors 311-3mn, disposed at intersections of the m input optical paths and the n output optical paths, for switching between the input optical paths and the output optical paths. A switch mirror 311-3mn located nearer the input ports has a higher transmittance.

Abstract: A serial digital signal transmission apparatus can transmit HDTV digital serial signals with little jitter while utilizing the SRTS method. In the apparatus, parallel clocks are counted by an N counter to be supplied to the latch circuit, which latches the output count of a p-bit counter, RTSs are supplied from the latch circuit, as the result of comparison gated by a gate circuit is supplied to a PLL circuit and multiplied by N, parallel clocks of 74.25 MHz or {fraction (74.25/1.001)} MHz, which are inputs to the N counter are regenerated (N is 8, 15 or 16), and transmitted data undergo parallel-to-serial conversion by a PS converter with these parallel clocks.

Abstract: To provide an optical switcher capable of sending incident light on one input port to any plurality of output ports. The optical switcher includes input ports disposed on extensions of m input optical paths (m being 2 or greater natural number), output ports disposed on extensions of n output optical paths (n being 2 or greater natural number), and movable translucent switch mirrors 311-3mn, disposed at intersections of the m input optical paths and the n output optical paths, for switching between the input optical paths and the output optical paths. A switch mirror 311-3mn located nearer the input ports has a higher transmittance.