Abstract: A film forming device includes a bottom plate detachably provided on a bottom surface of a mist spray head. The bottom plate includes a raw material solution opening, reaction material openings, and inert gas openings formed in regions corresponding to a raw material solution ejection port, reaction material ejection ports, and inert gas ejection ports, when the bottom plate is attached to the bottom surface of the mist spray head.

Abstract: A method for film-forming a buffer layer to be used for a solar cell, the buffer layer being disposed between a light absorbing layer and a transparent conductive film. Specifically, in this buffer layer film-forming method, a solution is formed into a mist, the solution containing zinc and almuminum as metal raw materials of the buffer layer. Then, a substrate disposed in the atmosphere is heated. Then, the mist of the solution is sprayed to the substrate being heated.

Abstract: In a film forming device, a mist spray head includes: an inert gas spray part between a raw material solution spray nozzle and a reaction material spray nozzle; and an inert gas spray part between the raw material solution spray nozzle and a reaction material spray nozzle. Accordingly, an inert gas ejection port is provided between a raw material solution ejection port and a reaction material ejection port, and an inert gas ejection port is provided between the raw material solution ejection port and a reaction material ejection port.

Abstract: A film forming apparatus includes a spray nozzle, a first chamber, a first gas supply port, a second chamber, a through hole, and a mist outlet. A solution transformed into droplets that is to be sprayed from the spray nozzle is housed in the first chamber and transformed into a mist in the first chamber by gas injected from the first gas supply port. The solution in mist form moves from the first chamber through the through hole to the second chamber and is misted onto a substrate from the mist outlet of the second chamber.

Abstract: An atomizing apparatus includes a container that accommodates a solution and a mist generator that forms the solution into a mist. An inner hollow structure is located in the container. The atomizing apparatus supplies a carrier gas into a gas supply space. The atomizing apparatus includes a connecting portion formed therein. The connecting portion connects a hollow of the inner hollow structure and the gas supply space.

Abstract: In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

Abstract: In a film forming device, a mist spray head includes: an inert gas spray part between a raw material solution spray nozzle and a reaction material spray nozzle; and an inert gas spray part between the raw material solution spray nozzle and a reaction material spray nozzle. Accordingly, an inert gas ejection port is provided between a raw material solution ejection port and a reaction material ejection port, and an inert gas ejection port is provided between the raw material solution ejection port and a reaction material ejection port.

Abstract: A film forming apparatus includes a mist spray head for spraying a raw material. The mist spray head includes a raw material spray nozzle and a raw material ejection part for ejecting an atomized raw material, and the raw material spray nozzle includes a cavity and a raw material discharge part which is drilled in a side surface of the cavity, being away from a bottom surface of the cavity, and is connected to the raw material ejection part.

Abstract: The present invention includes a mist generator that generates a mist of a raw material of a film to be formed, and a mist jet nozzle that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body having a hollow portion; a mist supply port that supplies the mist; a spout that jets the mist to the outside; a carrier gas supply port that supplies a carrier gas; and a shower plate having a plurality of holes formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space connected to the carrier gas supply port and a second space connected to the spout. The mist supply port is connected to the second space.

Abstract: Provided is a film forming device having a structure for easily removing adhered reaction products. The film forming device of the present invention includes a bottom plate (21) detachably provided on the bottom surface of a mist spray head (100). The bottom plate (21) includes a raw material solution opening (35), reaction material openings (36, 37), and inert gas openings (392-394) formed in regions corresponding to a raw material solution ejection port (15), reaction material ejection ports (16, 17), and inert gas ejection ports (192-194), when the bottom plate (21) is attached to the bottom surface of the mist spray head (100).

Abstract: The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate (100) in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention.

Abstract: A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.

Abstract: The present invention provides a film forming apparatus having a mist spray nozzle which enables a prevention of a generation of a clogging. The film forming apparatus according to the present invention is provided with a mist spray head (100) for spraying a raw material. The mist spray head (100) includes a raw material spray nozzle (N1) and a raw material ejection part (7) for ejecting an atomized raw material, and the raw material spray nozzle (N1) includes a cavity (2, 3) and a raw material discharge part (5) which is drilled in a side surface of the cavity (2, 3), being away from a bottom surface of the cavity (2, 3), and is connected to the raw material ejection part (7).

Abstract: A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.

Abstract: The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.

Abstract: The present invention relates to a method for film-forming a buffer layer to be used for a solar cell, the buffer layer being disposed between a light absorbing layer and a transparent conductive film. Specifically, in this buffer layer film-forming method, a solution (4) is formed into a mist, the solution containing zinc and aluminum as metal raw materials of the buffer layer. Then, a substrate (2) disposed in the atmosphere is heated. Then, the mist of the solution is sprayed to the substrate being heated.

Abstract: A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.

Abstract: An atomizing apparatus includes a container that accommodates a solution and a mist generator that forms the solution into a mist. An inner hollow structure is located in the container. The atomizing apparatus supplies a carrier gas into a gas supply space. The atomizing apparatus includes a connecting portion formed therein. The connecting portion connects a hollow of the inner hollow structure and the gas supply space.

Abstract: A film forming apparatus includes a first solution container, a second solution container, a reaction chamber, a first path, and a second path. The first solution container stores a source solution containing metal. The second solution container stores hydrogen peroxide. A substrate is in the reaction chamber, and the reaction chamber includes a heating unit that heats the substrate. The first path supplies a source solution from the first solution container to the reaction chamber. The second path supplies hydrogen peroxide from the second solution container to the reaction chamber.

Abstract: A method for forming a metal oxide film, the method including: forming a source solution containing metal into a mist, heating a substrate, supplying the source solution formed into a mist onto a first main surface of the substrate through a first supply path, and supplying hydrogen peroxide through a second path different from the first supply path onto the first main surface of the substrate, where the method further includes, in the following order, preliminarily preparing data showing a relationship among a molar ratio of an amount of the hydrogen peroxide to an amount of the zinc in the source solution, a carrier concentration of the metal oxide film, and a mobility of the metal oxide film, determining an amount of the hydrogen peroxide supplied with the data, and supplying the determined amount of the hydrogen peroxide through the second path onto the first main surface of the substrate.